Table of Contents:


  • Aerial Imaging

    • A.R. Neureuther, G. McIntyre, G. Robins and M. Lam, “Speciality reticles: Tool box of the future,” Advanced Reticle Symposium, San Jose, June 25, 2002 (web site published).

    • M. Cheng, A. R. Neureuther, ‘Effects of residual aberrations on line-end shortening in 193 nm lithography,” Proc. SPIE Vol. 4691, pp.1421-1432, 2002.

    • Mosong Cheng, Andrew R. Neureuther, Keeho Kim, Z. Mark Ma, Won D. Kim, Maureen A. Hanratty , “OPC rectification of random space patterns in 193-nm lithography,” Proc. SPIE Vol. 4691, pp.1308-1315, 2002.

    • A. R. Neureuther, M. Lam, “Polarization masks: concept and initial assessment,” Proc. SPIE Vol. 4691, pp.431-445, 2002.

    • G. Robins, A. R. Neureuther, “Illumination, resist, mask, and tool effects on pattern and probe-based aberration monitors,” Proc. SPIE Vol. 4691, pp.138-147, 2002.

    • Robins, G.; Adam, K.; Neureuther, A. “Measuring optical image aberrations with pattern and probe based targets,” J. Vac. Technol. B., vol.20, (no.1), Jan. 2002. p.338-343.

    • Neureuther, Andrew R.; Adam, Konstantinos; Hotta, Shoji; Pistor, Thomas V.; Robins, Garth; Deng, Yunfei,”Simulation of image quality issues at low k1 for 100-nm lithography, Proc. SPIE Vol. 4409, p. 33-40, Sept. 2001.

     

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  • EUV Lithography

    • K. Adam, A. R. Neureuther, “Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomask,” Proc. SPIE Vol. 4691, pp.107-122, 2002.

    • Y. Deng, A. R. Neureuther,”EUV phase-shifting masks and aberration monitors,” Proc. SPIE Vol. 4688, pp. 495-508, 2002.

    • Deng Y, Pistor, T. and A.R. Neureuther, “Effects of multilayer mask roughness on extreme ultraviolet lithography,” J. Vac. Technol. B., vol.20, (no.1), pp. 334-349, Jan. 2002.

     

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  • Electromagnetic Scattering

    • Konstantinos Adam and Andrew R. Neureuther, “Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering,” Journal of Microlithography, Microfabrication, and Microsystems -- October 2002 -- Volume 1, Issue 3, pp. 253-269.

    • Y. Deng, A. R. Neureuther, “Simulation of exposure and alignment for nanoimprint lithography,” Proc. SPIE Vol. 4688, pp. 842-849, 2002.

    • K. Adam and A.R. Neureuther, “Methodology for Accurate and Rapid Simulation of Large Arbitrary 2D Layouts of Advanced Photomasks,” Proc. SPIE Vol. 4562, pp. 1051-1067, Mar. 2002.

     

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  • Resists

    • L. Yuan, M. Williamson, M. Cheng, A. R. Neureuther, “Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique,” Proc. SPIE Vol. 4690, pp. 978-987, 2002.

    • M. Williamson, X. Meng, L. Yuan, A. R. Neureuther, “Line edge roughness (LER) study of the effects of image contrast, resist materials, and post-exposure processing,” Proc. SPIE Vol. 4690, pp. 357-365, 2002.

    • Mosong Cheng, Lei Yuan, Ebo Croffie, and Andrew Neureuther, “Improving resist resolution and sensitivity via electric-field enhanced postexposure baking,” Vac. Sci. Technol. B 20, 734-740 Mar. 2002.

    • Yuan, Lei; Cheng, Mosong; Croffie, Ebo H.; Neureuther, Andrew R., ”Three-dimensional post-exposure modeling and its applications,” Proc. SPIE Vol. 4345, p. 992-1000, Aug 2001.

    • Mosong Cheng, Ebo Croffie, Lei Yuan, and Andrew Neureuther, Enhancement of resist resolution and sensitivity via applied electric field, J. Vac. Sci. Technol. B18, 3318 (2000)
      M.V. Williamson and A.R. Neureuther, "Determining ultimate feature resolution and edge roughness of advanced resists with optical lithography exposure," to appear in J. Vac. Technol. B., Nov/Dec 2001.

     

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  • Process Aware EDA

    • F. E. Gennari, G. Robins, A. R. Neureuther, “Validation of the aberration pattern-matching OPC strategy,” Proc. SPIE Vol. 4692, pp.444-453, 2002.

    • F. Gennari, A. R. Neureuther, "Aberrations are a Big Part of  Phase-Shifting Masks," Proc. SPIE Vol. 4562, pp. 1077-1086, 2001.

     

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  • Electron Beam

    • B. Wu and A. Neureuther, "Energy deposition and transfer in electron beam lithography," J. Vac. Technol. B., Vol. 19, No. 6, 2508-2511, Nov/Dec 2001.

    • Bo Wu and A.R. Neureuther, “Impact of positive ions and effect of lens aberrations in projection electron-beam systems,” Proc. SPIE Vol. 4343, p. 107-114, Aug 2001.

     

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  • PhD Thesis

    • Michael Christopher Lam, “Fast Simulation Methods for Non-Planar Phase and Multilayer Defects in DUV and EUV Photomasks for Lithography, UC Berkeley,
      Dec 2005. Click to view

     

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