SAMPLE-2D User Guide
SAMPLE (Version 1.8a, June 1, 1991)
Simulation And Modeling of Profiles in Lithography and Etching
Developed at the :
Electronics Research Laboratory
Department of Electrical Engineering and Computer Sciences
University of California
Berkeley, California 94720
(C) Copyright notice (1991)
All rights reserved.
Copyright Notice (1991). All rights reserved by:
The SAMPLE Group
Room 550 Cory Hall
Electronics Research Laboratory
Department of Electrical Engineering and Computer Sciences
University of California
Berkeley, California 94720 U.S.A. The SAMPLE program is in
the public domain and is available free of charge to any in-
terested party on an "as-is" basis, for a nominal handling fee.
The sale, resale, or the use of this manual for profit without
the expressed written consent of Department of Electrical En-
gineering and Computer Sciences, University of California, Berke-
ley, California is forbidden. No updates or "bug" fixes are
promised. No guarantee about reliability or correctness is made.
It is the users responsibility to check the results for sensibil-
ity or correctness. This project has been supported by the Na-
tional Science Foundation and by grants-in-aid from several sem-
iconductor companies through the California MICRO program, and
most recently through SRC-SEMATECH. The user agrees to ack-
nowledge SAMPLE in publications using the results from the SAMPLE
program, and have anyone to whom the routines are further circu-
lated to agree to the same. If modified, this manual will still
be considered to be the original work (locally modified) unless
more than one-half of the manual is changed.
_________________________________________________________________
[] center; cB s l r.
The principal contributors to the SAMPLE program are:
Input interpreter and program structure S.N.Nandgaonkar
Optical lithography M.M.O'Toole, S.Subramanian, M.D.Prouty
Resist Models D.J.Kim, W.Leung, R.A.Ferguson
Development algorithm R.E.Jewett
Plasma Etching J.L.Reynolds, S.F.Meier
Deposition C.Sung, G.Addiego, E.W. Scheckler
E-beam Lithography M.G.Rosenfield
X-ray Lithography I.M.Yeung
Ion Beam Lithography G.M.Atkinson
Graphics S.N.Nandgaonkar, T.Parker, K.K.H. Toh
User guide editors G.Addiego, J.L.Reynolds, K.L.Ng, S.W.Kwok
M.J.Tilmann, E.W.Scheckler, A.P.Lai
PC version organization K.L.Ng, A.P.Lai
center; c s l l.
Many others have made contributions to the SAMPLE Group's effort
including:
A. Stephens, J. Mouton, P. Jain, F. Wise, A. Nasr, V. Mastromarco
G. Pounds, L. Winemberg, C. Fasce, W. Bell, D. Day, A.K. Wong,
T. Berger, D. Flanner, D.E. Lyons, J.W. Kong
[]
Introduction
Overview
How to Use This Manual
Important Changes
Chapter 1: Using SAMPLE
Chapter Overview
Command Categories
A SAMPLE Example
Running SAMPLE
Interactive Tutorial
Batch Tutorial
Tips on Using SAMPLE
References
Reader's Comment Page
Chapter 2: Command Reference
Chapter Overview
Command Summary
Arranged by Function
Arranged by Keywords
Arranged by Trial Number
Common Commands
Optical Lithography Commands
Input Files Examples
Program Defaults
Electron Beam Lithography Commands
Input File Examples
Program Defaults
Ion Beam Commands
Input File Examples
Program Defaults
X-ray Lithography Commands
Input File Examples
Program Defaults
Deposition Commands
Input File Examples
Program Defaults
Etching Commands
Input File Examples
Program Defaults
Multi-step Simulation
Input File Example
Chapter 3: SAMPLE Structure
Chapter Overview
Changing and Adding Keywords
How to Add New Trial Functions
Using the Keyword Statements in SAMPLE
Break-down of the Modules
Subroutine List by Modules
Syntax and Semantics for the Parser
Chapter 4: Examples (Input/Output)
Chapter Overview
Optical Lithography Examples
Single Wavelength Projection
Single Wavelength Projection with Descum
Two Wavelength Projection
Single Wavelength with Proximity Effect
Exposure with CEM
Inorganic Resist
Single Wavelength Projection with SPLAT
GCA 6300 Exposure of KTI 820 Resist
GCA 6300 Exposure of KTI 820 Resist with Scaling
GCA 6300 Exposure of KTI 820 Resist with Scaling and Phase
Shifting Mask: Levinson Type
Projection Lithography on Shipley SNR 248 Resist
Electron Beam Lithography Examples
Electron Beam (Defaults)
Square Beams
Gaussian Beams
Ion Beam Lithography Examples
Ion Beam (Defaults)
Basic MIBL
Tapered Absorber Ion Mask
X-ray Lithography Examples
X-ray (Defaults)
X-ray with Au Layer on Bottom
Deposition Examples
Deposition (Defaults)
Aluminum Deposition (Planetary)
Aluminum Lift Off Technique
Sputtering Oxide then Aluminum
Etching Examples
Etching - Isotropic (Defaults)
Anisotropic Etching of Four Layers
Directional Etching Loading Effect
Non-Planar Etching
Ion Milling of GaAs Under TI Mask
Anisotropic SiO2 Planarization
Anisotropic Etching of Multiple Lines and Spaces
Ionmilling of Aluminum with Mask Erosion
Multiple-Step Examples
Lithography/Etch/Ash/Deposit []
OVERVIEW
SAMPLE is a user oriented FORTRAN program for Simulation and
Modeling of Profiles in Lithography and Etching. It is capable
of simulating the time evolution of topographical features of in-
tegrated circuit devices during multiple process steps. The
basic process steps simulated by SAMPLE are optical, e-beam, x-
ray, and ion lithography, wet and dry etching, and deposition of
metals and insulators. SAMPLE includes contrast enhancement
layers and inorganic resists, etching of non-planar layers, and
links to the two-dimensional optical image simulator SPLAT. The
present version (1.8a) adds the simulation of Shipley SNR 248 (or
XP-8843) deep-UV acid hardening resist, new options and several
bug fixes. New keywords, SHIPLEYAHR which specifies the post-
exposure bake conditions of the Shipley SNR 248 resist, SUBSTREFL
which specifies the reflection coefficient of an oxide-substrate
layer, and PRINTMVALS which prints the PAC concentration for
optical lithography to a separate file for plotting, are also ad-
ded. Bug fixes such as anisotropic etching of multiple lines and
spaces have been included to give symmetrical profiles. Work on
the structure, models, processes and applications is continuing.
More detailed information about SAMPLE and its uses can be found
in the reference list in this guide. SAMPLE is being developed
at the University of California at Berkeley by a student research
group on process modeling and technology with Professors A.R.
Neureuther and W.G. Oldham. The development of SAMPLE has been
supported by the National Science Foundation, by grants in aid
from several semiconductor companies through the California MICRO
program, and most recently through SRC-SEMATECH. To encourage
open exchange of information SAMPLE is available on an as-is
basis for a small handling fee. Your feedback on the program is
welcomed. However, there is no assistance available for imple-
menting the program on your computer system or in training users.
SAMPLE currently consists of about 25,000 lines of code divided
into different process modules (e.g. optical, E-beam, Ion beam,
X-ray, deposition, and etching) and a controller. Typical CPU
times are one half of a megaflop minute. Care has been taken to
make the code as machine portable as possible by using a subset
of FORTRAN77. Aside from a few simple changes outlined in the
tape reading guide, it will run directly on IBM 370/CMS with
FORTVS compiler. The user's guide for version 1.8a has been set
up for on-line storage. SAMUG1 contains a general introduction
to SAMPLE and an example for getting started. The input parame-
ter specifications, their defaults and the execution commands are
described by keywords and trial statements defined in SAMUG2.
Information about the code, instructions on how to add trial
statements and a description of general statement syntax are in
SAMUG3. A series of examples which illustrate the use of many of
SAMPLE's features is in SAMUG4. []
HOW TO USE THIS MANUAL
This manual is divided into four major sections: Using SAMPLE,
Command Reference, SAMPLE Structure, and Examples. Each major
section begins with a "Chapter Overview" which should prove help-
ful in using the manual.
Chapter 1: Using SAMPLE It is highly recommended that the new
SAMPLE user begin by reading this chapter. It includes an orien-
tation to the types of commands SAMPLE uses, a simple lithogra-
phy example, and a short tutorial section. It concludes with
some general tips specifically designed to help the novice user.
Chapter 2: Command Reference The Command Reference Chapter should
be used as a "look-up" resource for all of SAMPLE's input state-
ments. The chapter begins with several summary lists of com-
mands. These lists are followed by complete descriptions of all
of the commands. Each grouping of commands ends with at least
one example input file. Also included are the default parameter
values for each machine contained in SAMPLE.
Chapter 3: SAMPLE Structure This chapter provides assistance for
those who will be modifying or enhancing the SAMPLE program. In-
cluded here is information for changing keywords, adding new TRI-
AL statements, and defining the syntax and semantics for the
parser. There is also a complete list of the files, functions,
and subroutines used in SAMPLE.
Chapter 4: Examples After reading Chapter 1, "Using SAMPLE", this
chapter will probably be the user's best source of information.
It includes detailed examples of actual "runs" on each of the
simulation machines, e.g. multiple wavelength lithography, Gaus-
sian shaped electron beams, aluminum lift off technique, etc. The
examples shown are obtained from the standard output of SAMPLE.
[]
IMPORTANT CHANGES IN SAMPLE1.8a
Version 1.8a adds several new simulation capabilities, and in-
cludes significant improvements in a number of the algorithms and
features. Lithography has been extended to include the simula-
tion of Shipley SNR 248 (or XP-8843) deep-UV acid hardening
resist [Fer90a]. New commands, SHIPLEYAHR which specifies the
post-exposure bake conditions of the Shipley AHR 248 resist, SUB-
STREFL which specifies the substrate in terms of the reflection
coefficient and PRINTMVALS which prints the PAC concentration for
optical lithography to a separate file for plotting, are also im-
plemented. Bug fixes such as anisotropic etching of multiple
lines and spaces have been corrected to give symmetrical pro-
files. Other additions include the expansion of the hemispherical
deposition model to include a cosine distribution for incoming
material flux, improved simulation profiles for an initial verti-
cal trench profile in planarization, elimination of loops outside
the plotting boundary, scaling and reorientation of the plotting
window, substitution of the exponential function for the Taylor
series expansion to give a more accurate calculation for the
amount of energy absorbed during exposure, and error checks for
mathematical division by zero. SAMPLE 1.8a continues to support
the linking of profiles generated by two-dimensional aerial image
calculations [Fla87a] including aberrations [Toh87a]. The image
simulation program, SPLAT version 3.0, and its user guide are in-
clude on the SAMPLE 1.8a TAPE. IMPORTANT!!! READ THE FOLLOWING
PARAGRAPH! While there has been an attempt to maintain backward
compatibility, the user should be aware that version 1.8a and
1.7a input and output files differ somewhat from those used in
version 1.6. Some minor changes will be needed if you plan either
to run your old input files in 1.8a or 1.7a, or use a plotting
routines other than the one provided on the SAMPLE tape. To make
the commands for the various machines more parallel in nature the
keywords in the optical lithography machine, such as RUN, have
been replaced by IMAGERUN, EXPOSERUN, and DEVELOPRUN. House
cleaning of the commands has also been carried out in the etching
machine. Other changed keywords include ETCHLAYERS, NONPLANAR,
and IONDEVLP. Refer to the Command Reference Chapter for de-
tails. With regard to the data output file, f77punch7, the old
format of eleven numbers per line (designed to pack as much data
as possible onto an IBM punch card) has been changed to a single
pair of (x,y) points per line. This format is easier to read and
more frequently used by standard plotting programs.
CHANGES IN SAMPLE PRIOR TO 1.8a
Starting with SAMPLE version 1.5b the relationship between the
TRIAL statement and the other keyword-oriented statements of the
previous versions has been generalized. All the previous
keyword-specific statements now have a corresponding TRIAL
action-number to perform the same function. The keyword TO is no
longer recognized in the input. So the user should omit the key-
word TO from the DEVTIME statement. e.g. "DEVTIME 15 TO 75, 5"
should now be "DEVTIME 15 75, 5". (The same change applies to
the DOSE statement, but since multiple dose values in the DOSE
statement are ignored, the users are not expected to have any old
input files using the keyword TO in the DOSE statement). To
specify the development rate of the resist, a more general state-
ment, TRIAL 209 (= DEVRATE), has been introduced. The ETCHRATE
statement used for this purpose in earlier versions will now pro-
duce a warning and should be replaced by the new statement. e.g.
instead of "ETCHRATE ANALYTIC (5.63 7.43 -12.6)" use "DEVRATE 1
(5.63 7.43 -12.6)". The algorithms and features of version 1.7a
include several changes for improved simulation accuracy. This
includes increasing the maximum number of layers in the resist to
400 and extending the number of input tokens allowed from 100 to
500. This, for example, allows SIMPL [Lee85a] to call SAMPLE
with up to 249 turning points to describe the topography of a
layer. Diffusion in the resist layer has been revised for a
larger dynamic range of diffusion lengths. To save time, users
can now also choose to simulate diffusion in only the vertical
(standing wave) direction. A careful look was taken at the prob-
lem of unrealistically large fingers on the standing wave
fringes. It was decided that since this problem is associated
with the physical model rather than inaccuracies in the string
development algorithm, SAMPLE would leave it up to the user to
eliminate them through options such as DESCUM. []
CHAPTER 1: OVERVIEW
This chapter of the SAMPLE User's Guide is designed for the be-
ginner. The first section, "Command Categories", gives some gen-
eral information on the standard types of commands used in SAM-
PLE. Also included are some exceptions to the standard types.
The next two sections, "SAMPLE Example" and "Running SAMPLE",
use a SAMPLE input file to illustrate several different features
of the program. "A SAMPLE Example," presents and briefly
describes a typical optical lithography simulation. The example
is then used in "Running SAMPLE" as a tutorial demonstration of
calling and running SAMPLE. "Tips On Using SAMPLE", the third
section in this chapter, covers some important aspects of SAMPLE
that will make the use of the program more clear. This chapter
also includes a bibliography of SAMPLE references. Lastly, there
is a READER'S COMMENT PAGE with an address to which bugs and
suggestions can be mailed.
COMMAND CATEGORIES
The SAMPLE program imitates the actions, events, and processes in
a real processing laboratory. Equipment simulated in SAMPLE in-
cludes an Image machine, an Exposure machine, a Development
machine, an E-beam machine, an Ion-beam machine, an X-ray
machine, a Deposition machine and an Etching machine. SAMPLE's
interaction with the user closely follows the procedures in a
real lab. SAMPLE is based on a model laboratory where the user
performs each process step by describing the detailed actions to
a technician in the laboratory. The two main categories of
statements, parameter-setting and action commands, convey the
necessary information to the (imaginary) technician. Parameter-
setting is the most common type of statement. A parameter-setting
statement allows the user to enter a description of the various
materials and machines to be used in the procedure. This infor-
mation is easily specified as numerical values for the various
material parameters (e.g. refractive indices, thickness of
layers), for the processing machines (e.g. radiation source
wavelength, lens numerical aperature), or for the process steps
themselves (e.g. development time). The user enters this infor-
mation by giving numeric arguments to the parameter-setting com-
mands. For example, the statement "LINESPACE 1.25 2" specifies
the mask to be a periodic pattern of 1.25 micrometer opaque
lines, and 2 micrometer transparent spaces. Using parameter-
setting commands is like setting various dials on a sophisticated
processing machine. The second category of input statements is
the action statements. They cause a processing action to take
place. It is like pushing the GO button on the machine to cause
the processing begin. In the program, a numerical computation
takes place to simulate the effects of processing. An example is
the DEVELOPRUN statement that causes the resist development that
occur during computation to take place in the program. Another
example is METRUN that causes the simulation of metal deposition.
Almost all keywords like LINESPACE and DEVELOPRUN have an associ-
ated TRIAL number for performing the same function. For example,
LINESPACE is completely equivalent to "TRIAL 208." Input state-
ments can be entered in either format. Keywords and their
equivalent TRIAL statements are discussed in more detail later in
this chapter. Instructions on how to add new capabilities to the
program are given in the "SAMPLE Structure" chapter. The simplest
way to view SAMPLE is to think of its use in two steps. First,
the machine is set up by giving the program all the appropriate
parameters. Second, the GO button is hit by issuing an action
command. The following list of the action commands gives a good
idea of the program's simulation capabilities.
IMAGERUN - Run the Image machine (i.e. compute image)
EXPOSERUN - Run the Optical Exposure machine
DEVELOPRUN - Run the Resist Development machine
OPTRUNALL - Equivalent to "IMAGERUN EXPOSERUN DEVELOPRUN"
i.e. runs the three machines in sequence.
FLAREINTEN ... - Image flare and scattering effects
HEATDIFFUS ... - Thermal diffusion in photoresist
DESCUMSPEC ... - Descumming the wafer
METRUN - Metal deposition process
ETCHRUN - Etching
EBLCNVLV ... - E-beam exposure (convolution)
EBLDEVELOP - Development for the E-beam machine
XRAYEXPOSE ... - X-ray exposure
XRDEVELOP - Development for the X-ray machine
IONEXPOSE ... - Ion beam exposure
IONDEVLP ... - Development for the Ion beam machine
INORGANIC ... - Inorganic resist silver bleach
There are several command statments that do not strictly fit into
the action or parameter-setting category (indicated above by
three trailing dots). For example, keywords like FLAREINTEN,
HEATDIFFUS, DESCUMSPEC, EBLCNVLV, XRAYEXPOSE, IONEXPOSE, INORGAN-
IC, and IONDEVLP, are not only action statements but also specify
some parameter values.
SAMPLE also includes commands for setting various options. The
user can request that plots of various curves and profiles be
plotted by using OPTDEVELOP, or OPTIMGEXP. These commands also
have parameters that allow adjustments, such as, setting a higher
accuracy for certain computations. A specific point to remember
about OPTDEVELOP and OPTIMGEXP is that they set up internal flags
in the program that cause the output to be produced when the
proper action statement is encountered. This is unlike the
EBLENGPTS command that produces its output immediately. To
understand the full capabilities and proper usage of each com-
mand, always refer to the Command Reference Chapter of this manu-
al. Other useful statements include RECOVER and EXECTIMES. RE-
COVER is used in SAMPLE to recover from simple syntax errors.
EXECTIMES (if it is implemented in the local version) gives some
execution-time statistics. EXECTIMES is automatically called
when you exit the program using the STOP command. In summary,
there are different categories of input statements to convey dif-
ferent types of information to the program. The largest
categories, parameter-setting and action, cover most of the phy-
sically relevant information necessary for the simulation. Other
types of input statements specifically address and/or utilize the
fact that it is a computer program performing numerical computa-
tions rather than an actual physical experiment taking place.
These other statements allow the user to get extra plots or prin-
touts, request more accuracy in numerical computations, address
other aspects of the program's physical or mathematical models,
or utilize some additional program features. []
A SAMPLE EXAMPLE
In this section, a simple optical lithography example is used to
illustrate some of SAMPLE's basic commands. The statements are
first listed and then individually explained. The semicolons are
statement separator and are discussed in more detail later.
For example, consider the input file :
______________________________________________________________________
lambda 0.4358 ; proj 0.28 ; linespace 1.25 1.25 ; imagerun
;
resmodel (0.4358) (0.5510 0.058 0.01) (1.68 (-0.02)) (0.7134)
; layers (4.73, -0.136) (1.47, 0.0, 0.0741) ; dose 50 ; ex-
poserun ;
devrate 1 (5.63, 7.43, -12.6) ; devtime 10 ; developrun ;
devtime 20 80, 4 ; developrun ;
dose 40 ; exposerun ; developrun ;
proj 0.31 ; linespace 3 3 ; imagerun ; exposerun ;
developrun ;
______________________________________________________________________
The meaning of the statements are as follows:
LAMBDA 0.4358 ; (parameter-setting command) sets the
wavelength of the image source lamp to 0.4358 micrometers.
PROJ 0.28 ; (parameter-setting command) specifies that the im-
aging system is projection type with Numerical Aperture (NA) =
0.28.
LINESPACE 1.25 1.25 ; (parameter-setting command) describes
the object (the mask) as a periodic pattern of 1.25 micrometer
wide lines (opaque regions) and 1.25 micrometer wide spaces (ful-
ly transparent regions).
IMAGERUN ; (action command) runs the horizontal "image machine"
which finds the image resulting from the imaging system confi-
guration specified for unit illumination at the mask.
RESMODEL (0.4358) (0.5510 0.058 0.01) (1.68 (-0.02)) (0.7134) ;
(parameter-setting command) specifies that the photoresist layer
on the wafer can be modeled at 0.4358 micrometers wavelength ra-
diation by the parameters : A = 0.5510 (1/micrometers) B = 0.0580
(1/micrometers) C = 0.0100 (cm**2/milliJoule) with a refractive
index of (n, k) = (1.68, -0.02) and a resist thickness of 0.7134
micrometers. For this example the k value -0.02 is ignored be-
cause it is calculated in the program from the A and B parameters
and the wavelength using the equation k = - (A*M +
B)*(wavelength)/(4*pi),
LAYERS (4.73, -0.136) (1.47, 0.0, 0.0741) ; (parameter-setting
command) specifies that the wafer has a substrate with refractive
index = (4.73, -0.136), which is assumed to be infinitely thick.
There is one more layer on the substrate (which may be an oxide
or nitride layer) with refractive index = (1.47, 0.0) and a
thickness of 0.0741 micrometers. The thickness of the pho-
toresist layer on top of the thin insulator is specified in the
RESMODEL statement.
DOSE 50 ; (parameter-setting command) sets the illumination at
the mask and the exposure time such that an energy density of 50
milliJoules/(cm**2) is incident on the mask.
EXPOSERUN ; (action command) runs the bleaching machine which
finds the standing waves produced in the photoresist at the
specified wavelength and wafer configuration. The resultant
bleaching for various exposures is calculated and the bleaching
model parameters (M-values) are stored for further use. The ac-
tual bleaching (M-values) in the photoresist layer resulting from
the actual image energy distribution is determined. (NOTE: Pre-
viously, the exposure machines were run in two steps by RUN 2
RUN 3. Now EXPOSERUN handles both.)
DEVRATE 1 (5.63, 7.43, -12.6) ; (parameter-setting command)
specifies that the development rate is an analytic function of M
as : rate(M) = exp( 5.67 + 7.43*M + (-12.6)*M*M )/10000 um/sec.
DEVTIME 10 ; (parameter-setting command) specifies that the
photoresist is to be developed for 10 seconds. DEVELOPRUN ;
(action command) runs the development machine (machine 4) to find
the developed contours of the photoresist layer after the speci-
fied (or default) development. The commands just described
essentially represent all the processing on the photoresist. The
remaining commands listed in the input illustrate that you can
modify a run by respecifying particular parameters and leaving
others at their original settings. A re-specified parameter al-
ways supersedes the previous value. It would have also been pos-
sible to run all of the machines with the one action command OP-
TRUNALL. This would be equivalent to sequentially issuing IM-
AGERUN, EXPOSERUN, then DEVELOPRUN. Lastly, notice the input
command line:
EXPOSERUN ; DEVELOPRUN ; (action command) which illustrates
that more than one statement can be put on a line. []
RUNNING SAMPLE
This section demonstrates how to start SAMPLE and run it in two
different modes. Originally, SAMPLE was run on punch cards and
thus is primarily geared for batch mode. Most users still prefer
the batch mode because input files can be saved and easily modi-
fied. SAMPLE, however, can also be run interactively. Both modes
of running SAMPLE will be covered in this section.
Using SAMPLE in Interactive Mode Although the interactive mode is
not commonly used, it serves as a useful tool for getting started
in SAMPLE. It is recommended that the following exercises be
done while sitting at the terminal. Only three runs of the Opti-
cal Lithography example listed previously will be entered in-
teractively. The general format for calling SAMPLE is:
pathname sample1.7 This FORMAT MAY VARY depending on the local
installation, the type of computer system, and possible user-
defined aliases. The user MUST have permission to write into the
current directory. After a few moments, the SAMPLE program
header appears on the screen. At the cursor, enter the first
parameter-setting command: lambda 0.4358 ; (and then hit the re-
turn or enter key) The semicolon, ";", tells the parser that the
command statement is finished. If the semicolon is missing the
parser evaluates the input command only after the next keyword is
encountered. This might be confusing because the information
printed out after typing the second command will pertain to the
first command (refer to "Interactive Hints and Errors" later in
this section). In response to the lambda input, the program
prints out a message stating that the single wavelength illumina-
tion at a lambda of 0.4358 micrometers has been set. Enter the
remaining statements for the first run. Remember the semicolon
and the carriage return! optimgexp 1 0 1 0 0 ; proj 0.28 ;
linespace 1.25 1.25 ; imagerun ; The last command, IMAGERUN
starts the computation. It is an action command. Within a few
seconds the results of the run scroll by on the screen. The text
on the screen is the standard output of SAMPLE and includes in-
formation on the parameter settings and profiles, the lineprinter
plot, and other facts about the run. An f77punch7 plot file is
also created. The examples in the last chapter of this guide are
the output files of SAMPLE runs. Each output file can include
multiple runs. Continue entering the following commands. If
necessary, refer to "Interactive Hints and Errors" section below
or to the "Tips on Using SAMPLE" section at the end of this
chapter. resmodel (0.4358) (0.5510 0.058 0.01) (1.68 (-0.02))
(0.7134) ; layers (4.73, -0.136) (1.47, 0.0, 0.0741) ; dose 50
; exposerun ; The EXPOSERUN command initiates the running of the
exposure machine. For format flexibility, SAMPLE allows the use
of commas, parentheses, and blanks as delimiters between the
numbers. For example, the LAYERS command above could have been
written as: layers 4.73, -0.136, 1.47, (0.0), 0.741 ; After a
few moments the standard output scrolls by on the screen. Con-
tinue with one more interactive run by issuing the following com-
mands: devrate 1 (5.63, 7.43, -12.6) ; devtime 10 ; developrun
; The DEVELOPRUN results in extensive output, including a graph
of the final resist profile. The graph is represented in the
standard output, as can be seen on the screen. (This graph is
provide by default. See the Command Reference Chapter for more
details.) The points for the graph are listed in the f77punch7
plot file for use with a graphics plotter. The f77punch7 file is
generated from SAMPLE when the flag is set in OPTIMGEXP keyword.
Exit SAMPLE by typing: stop {or end} When exiting, SAMPLE pro-
vides the user with some execution-time statistics. From the
current directory, list the f77punch7 plot-data file. As shown
in the example file below, the f77punch7 file holds the profile
coordinates from which a graph can be plotted. In addition to
the coordinate points, there is some other information about the
run. In the example file, explanations are given in italics and
preceded by a pound (#) sign.
Plot-data output file, f77punch7
______________________________________________________________________
0. 1.250 -0.713 0. # Min-x Max-x Min-y
Max-y
1.000 # No. of profiles for
this run.
50.000 # No. of points in the
profile. 0.000000e+00 -0.177463e-02 # Listing of x and y
coordinate 0.255102e-01 -0.177523e-02 points.
0.510203e-01 -0.177711e-02
. .
. .
. .
. . 0.122446e+01 -0.148559e-01 0.125000e+01
-0.149292e-01 6 # No. of
text lines that follow. U.C. Berkeley / SAMPLE (Version:
25Dec88) Development contours profile
Dose= 50.00 Lambdas: 0.4358 Thicknesses (starting with resist)
in micrometers are: 0.7134 0.0741 Contour times:
10.0 # End of run.
______________________________________________________________________
Interactive Hints and Errors Listed below are several items that
might be useful when using SAMPLE interactively. - When the end-
ing semicolon is forgotten, the program returns a line that says
"Input = some-command", but the information has not really been
received by the program. To proceed, simply enter a semicolon
(and carriage return). - Use the RECOVER command after a syntax
error. This resets the syntax error flags. Usually SAMPLE
states when this command is useful. Only the command that was en-
tered incorrectly needs to be reentered. - If a run-time error
is encountered, such as division by zero, the program aborts and
all input statements for the last run are lost. - To reset a
parameter simply reenter the parameter-command with the new argu-
ments. - To see the current parameter values, run the relevant
machine. See the section "Tips on Using SAMPLE" for instructions
on obtaining a list of all the default parameter values. Using
SAMPLE in Batch Mode The advantages of operating SAMPLE with
batch input files include reusability and easy modification. As
mentioned, SAMPLE is most often used in batch mode input format.
Using the batch mode involves two steps, creating an input file
and calling SAMPLE with this file as input. For the first step,
create an input file using the SAMPLE commands listed below:
Input file for batch mode:
______________________________________________________________________
lambda 0.4358 ; proj 0.28 ; linespace 1.25 1.25 ; imagerun
;
resmodel (0.4358) (0.5510 0.058 0.01) (1.68 (-0.02)) (0.7134)
; layers (4.73, -0.136) (1.47, 0.0, 0.0741) ; dose 50 ; ex-
poserun ;
devrate 1 (5.63, 7.43, -12.6) ; devtime 10 ; developrun ;
devtime 20 80, 4 ; developrun ;
dose 40 ; exposerun ; developrun ;
proj 0.31 ; linespace 3 3 ; imagerun ; exposerun ;
developrun ;
______________________________________________________________________
A few things to remember when making an input file: - SAMPLE does
not put any restrictions on which column to start a statement, or
how many statements on a line, or how many lines for a statement.
- Commas, parentheses, and blanks are all acceptable delimiters
for numbers, but tabs are NOT allowed. - It is recommended to end
all commands with a semicolon. - Comments can be entered by us-
ing the pound (#) sign. Any information following a pound sign to
the end of the line is considered a comment and ignored by the
program. The second step of running SAMPLE in batch mode is to
call SAMPLE with the input file. In a Unix environment the call
would be: sample1.7 < inputfile.name In addition, the SAMPLE out-
put can be captured by redirecting the output to a file. In a
Unix environment the call would be: sample1.7 < inputfile.name >
outputfile.name As explained above, a plot-data file, f77punch7,
is created and written to the current directory. In summary,
there are two entry modes in SAMPLE, interactive and batch. Batch
mode is advantageous for its ability to reuse and modify command
sets. Batch mode consist of making an input file of keyword com-
mands then calling SAMPLE using this file as input. There are
typically two types of output from SAMPLE: standard output and
plot-data output. The standard output consists of information on
the parameters and the run. The plot-data file, f77punch7, holds
the numerical information for creating graphs on plotter devices.
[]
TIPS ON USING SAMPLE
This section contains general comments to help the user interact with
SAMPLE. It is, in part, a summary of points made throughout
this chapter, however, there is some additional information that
is helpful for the novice SAMPLE user.
Running SAMPLE SAMPLE can be run interactively or in batch mode.
Batch is the preferred mode because it allows reuse and easy
modification of input files. It is recommended that the output
be redirected to a file.
To run SAMPLE you MUST be in a directory into which you can
write. The Format of Input Statements Input is primarily entered
in batch mode via a file consisting of a set of commands. In ad-
dition to commands, the input file may also contain comment lines
that serve as internal documentation. There is a simple struc-
ture to the input statements, with few restrictions on how to
type them in. Listed below are some guidelines for command lines
in the input file: - SAMPLE takes only the first 80 characters of
the input line. - A comment is simply any text following the
number-sign, "#". The "#" character as well as the following
text to the end of the line is simply ignored by the program.
The "#" may be written in any column of the input line. (An old
convention for comments was to put an asterisk in the first
column of the line whereby the whole line was treated as a com-
ment. This convention is still supported though not encouraged.)
As long as the comments do not split a keyword or a number, they
do not have any effect on the statement. - A statement in SAMPLE
starts with a distinct keyword which is often followed by other
numerical parameters. The numbers in the statements are written
as simple integers or floating point numbers (the exponent nota-
tion is not supported). - A statement in SAMPLE can be ended in
three ways. The official (and recommended) statement-separator
is the semicolon, ";". SAMPLE also reads the End-of-File (EOF)
as a signal of the end of the previous statement (this also, of
course, ends the file). Thirdly, any valid keyword will signal
the end of the previous statement. This last method is not recom-
mended for reasons stated later in this chapter in "The Impor-
tance of Statement-Separators". - There can be multiple state-
ments in one line, or many lines for one statement. - Blanks are
just skipped over (tabs are considered an error at present). The
user is encouraged to use blanks to lay out the input, and use
comments to make it more meaningful for others. Also, punctua-
tion symbols like commas, and parentheses are treated like
blanks, and so may also be used to make the input more readable.
- The keywords cannot be abbreviated. They must be typed in a
single case (upper case or lower, depending on your system).
Only if your system has been properly modified, can you mix
cases. - Use the RECOVER statement to recover from syntax er-
rors. (See below for more details.) For more serious errors,
such as division by zero, the program aborts. - There is a
STOP/END statement to tell the program that all the input is
over. Some statistical data on computer times is stated. A run
terminated with an EOF will also give this statistical data. The
Importance of Statement-Separators As mentioned above, the recom-
mended way to end a statement line is with a semicolon. This is
true for both interactive and batch mode. Forgetting to insert
the semicolon causes the program to rely on one of the other two
ways of terminating an input line, namely either the EOF marker
or a new distinct keyword. When SAMPLE is forced to do this,
there may be some problems. Following is a discussion about some
of these pitfalls.
Most statements take an indefinite number of numerical arguments
after the initial command word. If there is no semicolon the
program waits for the next keyword (or EOF marker) before acting
on the current keyword. In interactive mode the user may have to
type some extra input for the current statement to be acted upon.
A naive user may just wait for the program to react to incomplete
data while the computer waits for the remaining information. When
the program is run in batch mode incomplete parameters do not
matter as far as the input goes, but, in the output the printed
echo of the input lines will seem to be slightly ahead in phase
to the actions of the program and other results printed out. A
phase error can also occur in interactive mode when the user re-
lies on the next keyword to activate the last keyword. Both the
problem of phase error and incomplete parameters can be avoided
simply by using the semicolon. Accessing Program Defaults The
program has various default values for the parameters of the
simulation. One simple way to see the current values is to run a
minimal input example like: OPTRUNALL ; # OPTical RUN ALL This
runs the default optical lithography set-up (image, exposure, and
development) and lists the default parameters in the standard
output. Recovering from Syntax Errors When a simple syntactical
error occurs in the input, the program gives a terse message and
tries to skip the input until it finds a new statement. At the
same time it sets some internal flags to avoid doing any more
computations. When it can recognize the beginning of a new
statement, or when it encounters a statement-separator symbol, it
tries to check the rest of the input even though it will not do
any computations that those statements tell it to do (except if
they tell it to recover from the error ... as explained in the
following). This is to help the batch mode users detect most
such errors in a single run. However, the user can tell the pro-
gram to recover from the simple syntactical errors by typing in
the RECOVER statement. This command statement will cause the
error-flags to be reset and will allow the following statements
to be executed (if they do not have further errors). The TRIAL
Statement There are two ways that a user can issue the SAMPLE
commands, keywords or TRIAL statements. For each keyword, such
as LAMBDA, there is an equivalent TRIAL statement. Originally,
SAMPLE only had TRIAL statements. To increase ease of use and
transparency, keywords were introduced. They are now the pre-
ferred mode of command entry. The following TRIAL statements are
equivalent in their action to the keywords found in the input
file used throughout this chapter: TRIAL 201 == LAMBDA TRIAL 202
== DOSE TRIAL 204 == PROJ TRIAL 205 == CONTACT TRIAL 206 == LINE
TRIAL 207 == SPACE TRIAL 208 == LINESPACE TRIAL 209 == DEVRATE
TRIAL 212 == DEVTIME TRIAL 213 == RESMODEL TRIAL 214 == OPTRUNALL
TRIAL 215 == LAYERS
A complete listing of equivalent TRIAL statements can be found in
the Command Reference Chapter. Note that as TRIAL statements,
they need a statement-separator (the semicolon). Input Files SAM-
PLE primarily uses input files similar to the one illustrated
throughout this chapter. The file is composed of a series of
parameter-setting commands, followed by one or more action com-
mands. SAMPLE occasionally needs other specialized input files
for some simulated machines. For example, the E-beam lithography
simulation needs a file of Monte-Carlo data. The details of ac-
cessing this file are installation dependent. There is a brief
discussion on it in the Command Reference Chapter of this guide
under "Electron Beam Lithography." A second variation from the
standard input file are the the axial energy distribution data
files. These are optional files for the ion beam lithography
simulation. This too is discussed in the Command Reference
Chapter. In the description of the IONEDEP command.
Output Files There are two output files standardly associated
with SAMPLE. The first one is an ordinary text output file, that
throughout this chapter has been referred to as the standard out-
put file. This file is suitable for printing on a line printer.
It shows plots of the various curves and profiles in a pseudo-
graphic medium of low resolution. This output has a comprehen-
sive record of the actions in the run. The second file produced
by SAMPLE is the plot-data that is called f77punch7. This file
(typically ASCII) has more detailed numerical information about
the profiles that can be read by a plotting program. The user
needs a graphics postprocessor program to plot the curves and
profiles from the data in f77punch7. The procedure is installa-
tion and terminal dependent.
Files Associated with SAMPLE on a mainframe The following pages
show a simple diagram of all the input/output files associated
with SAMPLE on a mainframe.
______________________________________________________________________
+--------+
| |
Input | | 'Output' (printed text on lpr/terminal)
--------->| SAMPLE |----------------->
| |
| |
| |
| | +------+
| |--------> 'f77punch7' ----->| Plot |->(plots)
| | (plot-info file) +------+
+--------+
| | save/load files
| +--<------->----- fort.1, fort.2, ...
|
+-----> mon.out file (for execution time profiling)
|
|
| +------+
+-->| prof |-->(exec time profiling)
|(Unix)| ( information )
+------+
The internal (Fortran) logical unit numbers (lun) and other details:
Input/Output Stream lun comments (and name for lun)
--------------------- ----- ----------------------------
Standard Input 5 (iin)
Standard Output (lpr) 6 (iprint)
Plot-data output file 7 File 'f77punch7' (iplot)
Monte-Carlo Data for E-beam (2) File 'mcdat', input (ibulk)
Energy points plot - E-beam (8) File 'engpts', output
Image file from SPLAT (4) File '2ddat', input
Energy deposited in resist for Ion beam
-for the exposure regions (2) File 'axedat', input
-for the background regions (2) File 'axbdat', input
The parentheses around lun indicate that this lun is opened and
closed when needed. The files fort.1, fort.2, etc get opened by
the system when an attempt is made to access lun i (fort.i).
The plot program in itself can optionally take more files: (The
'pl', 'fpl', and 'pl3a' programs do not take any options files).
[(verbose)]-----------+
[opt.format]--------+ |
[options]---------v v v
+------+
| |
[plot-info file]----->| plot |---> (plots)
(standard-input) | |
+------+
The cursor-position reading program uses: (currently it is
specific to hp2648a series graphics terminals)
[options]----------+
|
v
+----------+
[plot-info file]------>| |----> output (for user)
| curpos |
commands from terminal ->| |
+----------+
^ v
| |
(cursor info from terminal) +--> cursor enquiry to graphics term.
Note that on some other computers (e.g. IBM) it would be helpful
to write EXEC files for a convenient manipulation of the files
associated with the program. []
BASIC REFERENCES
[Old79a] W. G. Oldham, S. N. Nandgaonkar, A. R. Neureuther, and
M. M. O'Toole, "A General Simulator for VLSI Lithography and
Etching Processes: Part I - Application to Projection Lithogra-
phy," IEEE Trans. on Electron Devices, Vol. ED-26, No. 4, pp.
717-722 April 1979.
[Old80a] W. G. Oldham, A. R. Neureuther, C. Sung, J. L. Reynolds
and S. N. Nandgaonkar, "A General Simulator for VLSI Lithography
and Etching Processes: PartII - Application to Deposition and
Etching," IEEE Trans. on Electron Devices, Vol. ED-27, No. 8, pp.
1455-1459, August 1980.
[Neu83a] A.R. Neureuther, "IC Process Modeling and Topography
Design," IEEE Proceedings, Special Issue on VLSI Design: Problems
and Tools, Vol. 71, No. 1, pp. 121-128, January, 1983.
[Neu85d] A.R. Neureuther and W.G. Oldham, "Simulation of Optical
Lithography," Chapter 3 in Advances in CAD for VLSI Process and
Device Simulation, W. Engl ed., North-Holland, 1985.
REFERENCES FOR NEW FEATURES IN VERSION 1.8a
[Fer90a] R.A. Ferguson, J.M. Hutchinson, C.A. Spence, A.R.
Neureuther, "Modeling and Simulation of a Deep-UV Acid Hardening
Resist," Electron, Ion and Photon Beam Science and Technology,
1990
REFERENCES RELEVANT TO EARLIER VERSIONS OF SAMPLE
[Ahl79a] C.N. Ahlquist, P. Schoen and W.G. Oldham, "A Study of a
High-Performance Stepper Lens," Kodak Microelectronics Seminar
Proceedings, 1979, and Proceedings of "Microcircuit Engineering"
Aachen Germany, 25-27 September, 1979.
[OTo79a] M. M. O'Toole and A. R. Neureuther, "The Influence of
Partial Coherence on Projection Printing," SPIE Vol. 135, pp.
22-27, 1979.
[Rey79a] J. L. Reynolds, A. R. Neureuther, and W.G. Oldham,
"Simulation of Dry Etched Line Etched Profiles," J. Vac. Sci
Technol., Vol 16, No 6, pp. 1772-1775, Nov/Dec 1979.
[Neu79a] A. R. Neureuther, D. F. Kyser, and C. H. Ting, "Electron
Beam Resist Edge Profile Simulation," IEEE Trans. on Electron
Devices, Vol. ED-26, No. 4, pp. 686-692, April 1979.
[Neu79b] A. R. Neureuther, C. Y. Liu and C. H. Ting, "Modeling
Ion Milling," J. Vac. Sci. and Technol., pp. 1167-1171, 1979.
[Neu80a] A. R. Neureuther, C. H. Ting and C. Y. Lin, "Application
of Line-Edge Profile Simulation to Thin-Film Deposition Process,"
IEEE Trans. on Electron Devices, Vol. ED-27, No, 8, pp. 1449-
1455, August 1980.
[Old81b] W. G. Oldham, S. Subramanian and A. R. Neureuther, "Opt-
ical Requirements for Projection Lithography," Solid State Elec-
tronics, Vol. 24, No. 10, pp. 975-980, 1981.
[Sub81a] S. Subramanian, "Rapid Calculation of Defocused Partial-
ly Coherent Images," Applied Optics, Vol. 20, pp. 1854-1857, May
1981.
[Jai81a] P. K. Jain, A. R. Neureuther and W. G. Oldham, "Influ-
ence of Axial Chromatic Aberration in Projection Printing," IEEE
Trans. on Electron Devices, Vol.ED-28, No.11, pp. 1410-1416, No-
vember 1981.
[Ros81b] M. G. Rosenfield and A. R. Neureuther, "Exploration of
Electron-Beam Writing Strategies and Resist Development Effects,"
IEEE Trans. on Electron Devices, Vol.ED-28, No.11, pp 1289-1294,
November 1981.
[Rob82] P.D. Robertson, F.W. Wise, A.N. Nasr, A.R. Neureuther and
C.H. Ting, "Proximity Effects and Influences of Nonuniform Il-
lumination in Projection Lithography," SPIE Vol. 334, Optical Mi-
crolithography, pp. 37-43, 1982.
[Ros83a] M.G. Rosenfield, A.R. Neureuther, and R. Viswanathan,
"Simulation of Backscattered Electron Signals for X-Ray Mask In-
spection," 1983 International Symposium on Electron, Ion and Pho-
ton Beams, J. Vac. Sci. Technol. B, Vol. 1, No. 4, pp. 1358-1363,
Oct-Dec. 1983.
[Lin84a] Y.C. Lin and A.R. Neureuther, "Alignment Signals for
Electron Beam Lithography," Solid State Technology, pp. 117-123,
139, February 1984.
[Kim84a] D.J. Kim, W.G. Oldham, and A.R. Neureuther, "Development
of Positive Photoresist," IEEE Trans. Elec. Dev., Vol. 31, pp.
1730-1735 December 1984.
[Pro84a] M.D. Prouty and A.R. Neureuther, "Optical Imaging with
Phase Shift Masks," SPIE Vol. 470, Optical Microlithography III,
pp. 228-232, March 1984.
[Neu85b] A.R. Neureuther, "Basic Models and Algorithms for Wafer
Topography Simulation," in Problems and New Solutions for Device
and Process Modeling, Ed. J.J.H. Miller, Boole Press, Dublin, pp.
99-109, 1985.
[Neu85c] A.R. Neureuther, "Algorithms for Wafer Topography Simu-
lation," NASECODE IV, Dublin, Ireland, Proceedings, pp.58-69,
1985.
[Neu87a] A.R. Neureuther, P. Flanner III and S. Shen, "Coherence
of Defect Interactions with Features in Optical Imaging," J. Vac.
Sci. Technol. B, pp. 308-312, Jan/Feb. 1987.
[Bel88a] W.R. Bell II, P.D. Flanner III, C. Zee, N. Tam, and A.R.
Neureuther, "Determination of Quantitative Resist Models from Ex-
periment," SPIE Proceedings 920 Advances in Resist Technology and
Processing V, pp. 382-389, 1988.
[Tam88a] N. Tam, R. Coyne and A.R. Neureuther, "Characterization
of Electron-Beam Exposed Optical Resist," J. Vac. Sci. and Tech-
nol. B pp. 361-365, 1988. [Fla86a] P.Flanner, S. Subramanian,
and A.R. Neureuther, "Two-Dimensional Optical Proximity Effects,"
SPIE Symposium, Optical Microlithography V, Santa Clara, CA March
1986. Vol. 633, pp. 239-244.
[Toh87a] K.H. Toh and A.R. Neureuther, "Identifying and Monitor-
ing Effects of Lens Aberrations in Projection Printing," SPIE
Proceedings, Optical Microlithography VI, Vol. 772, pp 202-209
1987.
[Fer87a] R.A. Ferguson and A.R. Neureuther, "Optimization of Con-
trast Enhanced Lithography with SAMPLE," Proceedings KTI Mi-
croelectronics Seminar, pp. 41-66, 1987.
[Leu85d] W. Leung, A. R. Neureuther and W. G. Oldham, "Inorganic
Resist Phenomena and Their Application to Optical Lithography,"
Trans. of IEEE on Electron Dev., Vil. ED-33, No. 2, pp. 173-181,
February 1986
[Atk85a] G.M. Atkinson and A.R. Neureuther, "Simulation of Mask
Scattering Effects in Masked Ion Beam Lithography," 1984 Interna-
tional Symposium on Electron, Ion and Photon Beams, J. Vac. Sci.
Technol. B., Vol. 3, No. 1, pp. 421-424, January/February, 1985.
[Mei87t] Stephen F. Meier "Etching Simulation of Nonplanar
Layers," M.S. Thesis, University of California, Berkeley, May
1987.
[Lyo88a] D.E. Lyons, S.F. Meier, L. Winemberg, A.R. Neureuther
and W.G. Oldham, "Simulation of Back-of-the Line Processes with
SAMPLE," Proceedings KTI Microelectronics Seminar, pp. 261-281,
1988.
REFERENCES TO OTHER BERKELEY PROCESS SIMULATORS
[Gri83a] M.A. Grimm, K. Lee and A.R. Neureuther, "SIMPL-1 (SIMu-
lated Profiles from the Layout - version 1)," IEDM Technical Dig-
est 1983, pp. 255-258.
[Lee83a] "Topography Dependent Electrical Parameter Simulation
for VLSI Design," K. Lee, Y. Sakai and A.R. Neureuther, IEEE
Trans. Elec. Dev., Vol. 30, pp. 1469-1474 November 1983.
[Lee85a] K. Lee and A.R. Neureuther, "SIMPL-2 (SIMulated Profiles
from the Layout - Version 2)," 1985 Symposium on VLSI Technology,
Kobe, Japan, Digest of Technical Papers, pp. 64-65, May 1985.
[Sut86a] P. Sutardja, Y. Shacham-Diamand and W.G. Oldham, "Two-
Dimensional Simulation of Glass Reflow and Silicon Oxidation,"
1986 Symposium on VLSI Technology Technical Digest, pp.39-40, May
1986.
[Wuh88a] H.C. Wu, A.S. Wong, Y.L. Koh, E.W. Scheckler, and A.R.
Neureuther, "SIMulated Profiles from the Layout - Design Inter-
face in X (SIMPL-DIX)," IEDM Technical Digest, pp. 328-331, 1988.
[Gue88a] R.G. Guerrieri and A.R. Neureuther, "Simulation of Mi-
crocrack Effects in Dissolution of Positive Resist Exposed by X-
Ray Lithography," IEEE Trans. CAD, pp. 755-764, July, 1988.
[Sch91a] E.W. Scheckler, A.S. Wong, R.H. Wang, G. Chin, J.R.
Camagna, K.K.H. Toh, K.H. Tadros, R.A. Ferguson, A.R. Neureuther,
and R.W. Dutton, "A Utility-Based Integrated Process Simulation
System," 1990 Symposium on VLSI Technology, Digest of Technical
Papers, pp. 97-98, Honolulu, Hawaii, June 4-7, 1990.
[Sch91b] E.W. Scheckler, K.K.H. Toh, D.M. Hoffstetter, and A.R.
Neureuther, "3D Lithography, Etching, and Deposition Simulation
(SAMPLE-3D)," 1991 Symposium on VLSI Technology, Digest of Techn-
ical Papers, pp. 97-98, Oiso, Japan, May 28-30, 1991.
[Toh90a] K.K.H. Toh, "Algorithm for Three-Dimensional Simulator
and Photoresist Development," Ph.D. Thesis, University of Cali-
fornia, Berkeley, December 1990.
THESIS WORK RELEVANT TO SAMPLE CODE
[Atk85t] Gary M. Atkinson, "Characterization and Fabrication of
Channeling Masks for Masked Ion Beam Lithography," Ph.D. Thesis,
University of California, Berkeley, December, 1985.
[Bel86t] W.R. Bell II, "Determination of Process Simulation
Parameters from Experiment: Plasma Etching and Photoresist Disso-
lution," M.S. Thesis, University of California, Berkeley, 1986.
[Fer87t] Richard A. Ferguson, "Simulation of Contrast Enhanced
Lithography," M.S. Thesis, University of California, Berkeley,
May 1987.
[Fer91t] R.A. Ferguson, "Modeling and Simulation of Reaction
Kinetics in Advanced Resist Processes for Optical Lithography,"
Ph.D. Thesis, University of California, Berkeley, May 1991.
[Fla86t] Philip D Flanner III, "Two-Dimensional Optical Imaging
for Photolithography Simulation," M. S. Thesis Plan II, Universi-
ty of California, Berkeley, May 1986.
[Jai81t] P. K. Jain, "Influence of Axial Chromatic Aberrations on
Image Contrast in Projection Lithography," MS Thesis, University
of California, Berkeley, June 1981.
[Jew79t] Robert Jewett, "A String Model Etching Algorithm," M. S.
Thesis, University of California, Berkeley, December 1979.
[Kim84t] D.J. Kim, "Characterization and Modeling of Positive
Photoresist," Ph.D. Thesis, University of California, Berkeley,
December, 1984.
[Leu85t] Wing Leung, "Characterization of Inorganic Resist for
VLSI Fabrication" Ph.D. Thesis, University of California, Berke-
ley, September, 1985.
[Lin81t] Y. C. Lin, "Alignment Signals from Electron Scattering
Near an Edge for Electron Beam Microfabrication," PhD. Thesis,
University of California, Berkeley, March 1981.
[Mei87t] Stephen F. Meier "Etching Simulation of Nonplanar
Layers," M.S. Thesis, University of California, Berkeley, May
1987.
[Nan78t] S. N. Nandgaonkar, "Design of a Simulator Program (SAM-
PLE) for IC Fabrication," M. S. Thesis, University of California,
Berkeley, 1978.
[Nan84t] S.N. Nandgaonkar, "A Family of Simulation Programs for
IC Fabrication Processes (Their Structure, Design, and Implemen-
tation)" Ph.D. Thesis, University of California, December 1984.
[OTo79t] Michael Marson O'Toole, "Simulation of Optically Formed
Image Profiles in Positive Photoresist," PhD. Thesis, University
of California, Berkeley, June 1979.
[Rey80t] John L. Reynolds, "Simulation of Dry Etched Line-Edge
Profiles," M.S. Thesis, University of California, Berkeley, June
1980.
[Rey83t] John L Reynolds, "Characterization of Plasma Etched
Structures in IC Processing," PhD Thesis, University of Califor-
nia, Berkeley, December, 1983.
[Ros81t] M. G. Rosenfield, "Simulation of Developed Resist Pro-
files for Electron Beam Lithography," M.S. Thesis, University of
California, Berkeley, June 1981
[Ros84t] Michael G. Rosenfield, "Analysis of Backscattered Elec-
tron Signals for X-Ray Mask Inspection," PhD. Thesis, University
of California, Berkeley, January 1984.
[Sch88t] Edward W. Scheckler, "Extraction of Topography Dependent
Electrical Characteristics from Process Simulation using SIMPL,
with Application to Planarization and Dense Interconnect Techno-
logies," M.S. Thesis, University of California, Berkeley, De-
cember 1988.
[Sub80t] Shankar Subramanian, "Partial Coherence, Image Calcula-
tions and Resist Linewidth Control in Projection Lithography," M.
S. Thesis, University of California, Berkeley, June 1980.
[Sun79t] Chiakang Sung, "Simulation and Modeling of Evaporated
Deposition Profiles," M. S. Thesis, University of California,
Berkeley, December 1979.
[Tam88t] Nelson N. Tam, "Characterization of Electron-Beam-
Exposed Negative Resists," M.S. Thesis, University of California,
Berkeley, May 1988.
[Toh88t] Kenny K. H. Toh, "Two-Dimensional Imaging with Effects
of Lens Aberrations in Optical Lithography," M.S. Thesis, Univer-
sity of California, Berkeley, May 1988.
[Wis81t] F.W. Wise, "Lens Aberrations and Nonuniform Illumination
in Projection Lithography," M. S. Thesis, University of Califor-
nia, Berkeley, December 1981.
[]
READER'S COMMENTS
This User's Guide has been developed to assist you in using and
modifying SAMPLE. If you wish to contribute to the efforts
please send your comments to: Prof. Neureuther
510 Cory Hall
UC at Berkeley
Berkeley, CA 94720 - What sections did you find MOST
useful? - What sections did you find LEAST useful? - What er-
rors or omissions have you found? - What is your name, address,
and phone?
How would you best describe yourself: ____ New SAMPLE user
____ Non-programmer ____ Experienced user ____ Occasional
programmer
____ Sophisticated programmer ____ Oc-
casional SAMPLE user ____ Frequent SAMPLE user Use
the above address for reporting bugs in the program or expressing
changes you would like to see in the future. When reporting a
bug, please answer the following questions:
- What version of SAMPLE are you using?
- What system/OS/compiler are you using?
- Have you discovered an acceptable work-around? If so, what?
- Can you send output files that illustrate the problem?
- Have you made any changes to the program that may be involved
in the problem? For general distribution information contact:
Industrial Liaison Program 479 Cory Hall
U.C. at Berkeley Berkeley, CA 94720
(415) 643-6687
CHAPTER 2: OVERVIEW
This chapter should be used as a "look-up" resource for all of
SAMPLE's input statements. The chapter begins with several sum-
mary lists of commands. They are arranged first by function,
then by keyword and finally by trial number. These lists are
followed by complete descriptions of the commands which are or-
ganized by machine, e.g. all the input statements for Etching are
grouped together. The simulated machines are Optical Lithography
(Image/Expose/Development), E-beam Lithography, Ion beam Lithog-
raphy, X-ray Lithography, Deposition and Etching.
Each group of commands ends with at least one sample input file.
The standard output generated by these samples are listed in the
Examples Chapter of this guide. Command Notation The notation
used in the chapter is as follows: - The keywords are given in
upper-case letters. Even though the keywords are shown here in
upper-case the program (on VAX/Unix at UCB) expects them to be in
lower case. (On other computers they may have to be in upper-
case depending on how the program is installed.) - The numbers
are specified by 'num1', 'num2' etc. or by more meaningful lower
case names. - [ ] square brackets enclose items that are option-
al.
[...] item may be omitted or specified once only.
[...]* item may be specified zero or more times.
[...]+ item must be specified at least once. - Commas,
blanks, and parentheses are treated as separators between various
lexical tokens (items) and hence can be used anywhere between the
various items. They are used here only to clarify the input
structure. All examples given here use keywords rather than the
"TRIAL num1" form for readability and similarity with previous
documentation of these statements. It is recommended that key-
words be used.
COMMAND SUMMARY ARRANGED BY FUNCTION
User interface commands
______________________________________________________________________
# Comment lines begin with "#" character.
(old convention use '*' delimiter)
# Delimiter of comment in any column.
end # end, currently just like the stop stmt below
stop # stop the simulation, exit from the program
recover # recover from syntax errors
exectimes # print the execution times
lprwidth # line printer width to be available for plots
ifcdbd # user interface debugging output depth
help # runtime help
______________________________________________________________________
Optical Lithography = Image / Expose / Develop
______________________________________________________________________
heatdiffus diff.length
optdevelop idiag ipunch iaccuracy
optimgexp intplot mtfplot ipunch MvsE MvsX
profsave iounit # save current profile
profload iounit # load current profile
resdevpar # print development rate parameters
readimage # read intensity image from punch file(2ddat)
phasemask (mag1 phase1 size1)...(magN phaseN sizeN)
parcohdef icoh sigma def.dist [ iold ]
mulwavres Nlambda lambda1..lambdaN (A1 B1 C1)..(AN BN CN) int1..intN
horwindow width edge
contdevel # reset
printmvals flag # print the M values of contour plots
conenhmat thick Nlam (lam1 na1 nb1 A1 B1 C1) ... (lamN naN ...) meth
shipleyahr [btemp [btime]]
defocus [df.dist]
refracmull ni (n(i-1) k(i-1)) ... (n0 k0)
apershape ishape
irregumask l1 s2 l2 s1 # "irregular" mask
inorganic a b c d tau initime finaltime numplot
descumspec descum1 [ descumf nsteps ]
surfinhib reduc1 [depth1 [reduc2 [depth2]]]
flareinten flare
vertrespts [ nprlyr ]
devscalpar [sclfct [sclx [sclz ]]]
intenvsdep # print intensity versus depth (from expose)
timegapbrk [ tbkadd ]
minidefcon cont dfdist uplim lowlim plotflag [teststep]
miniloopim param flag1 flag2 repeat startval increval
substrefl mag ang [n] [(mag ang n) ... ]
lambda wavelength (um) [weight wavelength2 weight2 ...]
dose exposure.dose (mJ/cm**2)
proj numerical.aperture
contact separation [ C1 C2 ]
line linewidth (um)
space spacewidth (um)
linespace linewidth spacewidth (um)
devrate [model [ parameters ... ] ]
devtime [start [ stop [ steps ]]]
resmodel wavelength A B C n k thickness
optrunall # run the image, expose, and develop machine in order
layers n k [(n k thickness) ... ]
imagerun # run the image machine
exposerun # run the exposure machine
developrun # run the development machine
______________________________________________________________________
E-beam Lithography Machine
______________________________________________________________________
eblith # (no arguments) optional
eblprint iwflg(1) . . . . iwflg(5)
eblrate r1 cm d0 alph
eblpatsq fwhm edge
eblpatps itcou sper sigma sptwgt(i)
eblpatns itcou shfdis(i) stddev(i) sptwgt(i) . . . .
eblpline lincou shfper wgtlin(i) . . . .
eblnline lincou dislin(i) wgtlin(i) . . . .
eblwind cpwind isym shift
eblcnvlv dose
eblstrpts npts frac
eblnewdose cdose
ebldevelop # run E-beam development
eblengpts itest idep iskip
______________________________________________________________________
Ion Beam Lithography Machine
______________________________________________________________________
ionprint ipflgs(1)...ipflgs(8)
ionbeam itype,e0,dose(x10**13), bangle
ionmask spce,absthk,delta,supthk,xraty(1)...xray(9)
ionscat abstyp,dele,psihlf,dosthr,cntrst,psibak,delew
ionreswin resthk, reswin, shift, sgres1, sgres2
ionedep axepts, axbpts
ionexpose horpts, que
ionfrac frac
ionresist r1, cm d0, alph
iondevlp # run ion beam development
ionecntr engmax,idep,iskip,ityplt
iondevtime devsrt, devend, devinc, npts
______________________________________________________________________
X-ray Lithography Machine
______________________________________________________________________
xrayinit # initialization
xrayprint ioflag
xraymask locmsk [thkmsk [theta [mu]]]
xratetop thktlr [mut [r1t [cmt [d0t [alphat]]]]]
xratebot thkblr [mub [r1b [cmb [d0b [alphab]]]]]
xraygold layer [auabso [fractn [range]]]
xrayrowcol ncol [nrow]
xrayenergy zfrac(1) [zfrac(2) [.....[zfrac(20)]..]
xraywindow cpwind [isym [shift]]
xrayexpose [flux]
xraynpts npts
xrdevelop # run X-ray development
______________________________________________________________________
Deposition / Metalization Machine
______________________________________________________________________
metsrcparm mtype ... parameters... dep.rate
metgraphf [iplot] # request plot (from deposition)
methotsigm [dep.sigma]
metaccur [accuracy [deloop]]
metmaxxz [width [height]]
metinprof ( x(i) , z(i) ) i= 1 up to 249 times
metsavprof iounit # save a deposition profile - call mtsave(0,iounit)
metlodprof iounit # load a profile - call mtload(iounit)
mettimstep start,stop [step]
metrun # run Metalization/Deposition machine
______________________________________________________________________
Plasma Etching / Ion Milling Machine
______________________________________________________________________
etchrates jtype isotropic or isotropic/directional rate pairs
etchlayers ilayer thickness
etchnumlay number.of.layers
ionmill ilayer S0(ilayer) A(ilayer) B(ilayer) C(ilayer) density(ilayer)
ionmill ilayer S0(ilayer) thetamax(ilayer) max:norm density(ilayer)
ionmill ilayer inc R0 Rinc ... R90
etchsource theta phi
asimplant q dose [blthick]
etchaccur accuracy nchecker diagnostics
etchprof ptype dimen
etchprof (x,z)1 (x,z)2 (x,z)3 ... (x,z)12
etchwindow width
etchplot ipunch iplot iprint ireset
etchtime time1 [ time2, nsteps]
etchrun # run etching routines
etchsave iounit # save a current profile - call sveprf(iounit)
etchload iounit # load a saved profile - call ehload(iounit)
dvsave iounit # save a current profile - call dvsave(iounit)
dvload iounit # load a saved profile - call dvload(iounit)
kinetics ilayer sigma-x sigma-z [coeff thickness]
addedrate ilayer rlayer(ilayer) rate(ilayer)
nonplanar ilayer (x,z)1 (x,z)2 (x,z)3 ... (x,z)249
______________________________________________________________________
[]
COMMAND SUMMARY ARRANGED BY KEYWORDS
(Keywords to Trial Numbers Mapping)
end -2 (currently just like the stop statement below)
stop -1 stop the simulation, exit from the program
recover 0 'recover' from syntax error
exectimes 5 system execution times (cpu, system, real time)
lprwidth 6 line-printer width (columns) to be available for plots
ifcdbd 7 user interface debugging output depth
help 8 runtime help
profsave 9 save current profile
profload 10 load current profile
The previous kwd-style statements are now treated like mapped-kwd-stmts.
lambda 201 wavelength specification
dose 202 exposure amount
proj 204 projection type optical printing system
contact 205 contact type optical printing system
line 206 a single line mask
space 207 a single space mask
linespace 208 a periodic pattern of lines and spaces on the mask
devrate 209 development rate specification
devtime 212 development time
resmodel 213 resist model for exposure
optrunall 214 running the photolithography machines
layers 215 wafer structure
imagerun 216 running the image machine
exposerun 217 running the exposure machine
developrun 218 running the development machine
heatdiffus 1 run diffusion machine with given sigma of diffusion.
optdevelop 2 output options of develop machine.
optimgexp 3 o/p opts for image and expose
resdevpar 11 prints the development rate function parameters
readimage 18 read intensity image from the punch file(2ddat)
phasemask 19 specify a general mask with possible phase shifts
parcohdef 20 partial coherence and defocus
mulwavres 21 multiple wavelengths and the corresp. resist params
horwindow 22 specify a horizontal window and edge location
contdevel 23 allows continuation of development (e.g. for descum)
printmvals 24 print the M values of contour plots
conenhmat 25 specify parameters for contrast enhancement material
shipleyahr 26 specify the PEB conditions of Shipley SNR 248 resist
defocus 28 sets defocus only
flareinten 30 intensity flare
refracmull 31 put refractive indices for multi-lambdas
apershape 32 put the shape of aperture of proj-printer
vertrespts 35 set resist points (vertically)
devscalpar 36 scale parameters for develop (sclfct,smin[x],smax[x,z])
intenvsdep 37 print intensity versus depth (from expose)
timegapbrk 38 time gap after resist breakthrough to change DeltaT
irregumask 45 irregular mask (L1 S2 L2 S1)
inorganic 46 inorganic resist silver bleach
descumspec 60 descumming specification
surfinhib 62 the surface inhibition effect
minidefcon 71 minicontroller (image) defocus for a contrast, etc.
miniloopim 72 minicontroller : loop on params in image machine
substrefl 73 specify reflection coefficient of oxide-substrate layer
etchrates 78 specify type of etching and rates.
etchlayers 79 specify the thickness of each layer
etchnumlay 80 specify the number of layers
ionmill 81 set the material parameters in ion etching
etchsource 82 set the source angle for the incoming(/ion) flux
asimplant 83 set the q, and the energy for arsenic impl. layer
etchaccur 84 set the degree of accuracy for etching
etchprof 85 set a piecewise linear profile
etchwindow 86 store the horizontal window dimension
etchplot 87 request cards punched
etchtime 88 set the etching times, and the number of profiles
etchrun 89 run etch
etchsave 90 save the profile
etchload 91 load a saved profile - call ehload(iounit)
dvsave 92 call dvsave(0,iounit)
dvload 93 call dvload(iounit)
kinetics 94 surface kinetics of etching for a specified layer
addedrate 95 put special iso. additive rates to certain layers
nonplanar 96 simulate a non-uniform layer.
metsrcparm 50 set the metalization source and parameters
metgraphf 51 set flag to generate the graph file for metalization
methotsigm 52 set the sigma value and flag for surf diffus(hot subs)
metaccur 53 metalization: accuracy level and flag to call deloop
metmaxxz 54 set max dimensions for x and z coordinates
metinprof 55 input coords as turning points for the string model
metsavprof 56 save a metalized profile
metlodprof 57 load a developed profile for metalization
mettimstep 58 set the metalization time and the number of steps
metrun 59 run the metalization routine
eblith 101 ebeam lithography machine initialization (optional)
eblprint 102 ebeam special output printing flags
eblrate 104 ebl rate parameters
eblpatsq 105 ebl rectangular beam
eblpatps 106 ebl periodic array of gaussian beams
eblpatns 107 ebl non-periodic array of gaussian beams
eblpline 108 ebl periodic line pattern
eblnline 109 ebl non-periodic line pattern
eblwind 110 ebl window of interest
eblcnvlv 111 ebl convolution - dose
eblstrpts 112 ebl string points - anisotropic development
eblnewdose 113 ebl change dose
ebldevelop 114 ebl development
eblengpts 115 ebl absorbed energy density contours
ionprint 301 ibl set printing flags
ionbeam 303 ibl input beam parameters
ionmask 304 ibl input mask geometry
ionscat 305 ibl input/calculate scattering
ionreswin 306 ibl input resist parameters
ionedep 308 ibl read in/calculate energy deposition
ionexpose 309 ibl expose the resist
ionfrac 310 ibl set anisotropic rate factor
ionresist 311 ibl set resist development parameters
iondevlp 312 ibl develop the resist
ionecntr 313 ibl output energy contours
iondevtime 314 ibl development times
xrayinit 321 xray lithography initialization
xrayprint 322 xray extra print out flags
xraymask 323 xray mask parameters
xratetop 324 xray lithography top resist parameters
xratebot 325 xray lithography bottom resist parameters
xraygold 326 xray gold absorb layer
xrayrowcol 327 xray energy array row/column trial
xrayenergy 328 xray energy print out depths
xraywindow 329 xray window for exposure and development
xrayexpose 330 xray exposure (and dose)
xraynpts 331 xray string points for development
xrdevelop 332 xray development
[]
COMMAND SUMMARY ARRANGED BY TRIAL NUMBER
______________________________________________________________________
trial -2 # end (currently just like the stop stmt below)
trial -1 # stop
trial 0 # recover from simple syntax errors
trial 1 diff.length
trial 2 idiag ipunch iaccuracy
trial 3 intplot mtfplot ipunch MvsE MvsX
trial 5 # print the execution times
trial 6 [no.of.columns]
trial 7 [depth]
trial 8 # help
trial 9 iounit # save a profile into file 'prfsav.(iounit)'
trial 10 iounit # load the profile stored in 'prfsav.(iounit)'
trial 11 # print development rate parameters
trial 18 # read image file
trial 19 (mag1 phase1 size1) ... (magN phaseN sizeN)
trial 20 icoh sigma def.dist [ iold ]
trial 21 Nlambda lambda1...lambdaN (A1 B1 C1)...(AN BN CN) int1...intN
trial 22 width edge
trial 23 # reset
trial 24 flag # print M values of contour plots
trial 25 thick Nlam (lam1 na1 nb1 A1 B1 C1) ... (lamN naN ... ) meth
trial 26 [btemp [btime]]
trial 28 [df.dist]
trial 30 flare
trial 31 #ni (#n(i-1) #k(i-1)) ... (#n0 #k0) ##for lambda1
trial 32 ishape
trial 35 [ nprlyr ]
trial 36 [sclfct [sclx [sclz ]]]
trial 37 # print intensity versus depth (from expose)
trial 38 [ tbkadd ]
trial 45 l1 s2 l2 s1 # "irregular" mask
trial 46 a b c d tau initime finaltime numplot
trial 50 mtype ... parameters... dep.rate
trial 51 [iplot] # request plot (from deposition)
trial 52 [dep.sigma]
trial 53 [accuracy [deloop]]
trial 54 [width [height]]
trial 55 ( x(i) , z(i) ) i= 1 up to 49 times
trial 56 iounit # save a deposition profile - call mtsave(0,iounit)
trial 57 iounit # load a profile - call mtload(iounit)
trial 58 start, stop [step]
trial 59 # run deposition routines
trial 60 descum1 [ descumf nsteps ]
trial 62 reduc1 [depth1 [reduc2 [depth2]]]
trial 71 cont dfdist uplim lowlim plotflag [teststep]
trial 72 param flag1 flag2 repeat startval increval
trial 73 mag ang [n] [(mag ang n) ... ]
trial 78 jtype isotropic or isotropic/directional rate pairs
trial 79 ilayer thickness
trial 80 layernumber
trial 81 ilayer S0(ilayer) A(ilayer) B(ilayer) C(ilayer) density(ilayer)
trial 81 ilayer S0(ilayer) thetamax(ilayer) max:norm density(ilayer)
trial 81 ilayer inc R0 Rinc ... R90
trial 82 theta phi
trial 83 q dose [blthick]
trial 84 accuracy diagnostics
trial 85 (x,z)1 (x,z)2 (x,z)3 ... (x,z)12
trial 85 ptype dimen
trial 86 width
trial 87 ipunch iplot iprint ireset
trial 88 time1 [ time2, nsteps]
trial 89 # run etching routines
trial 90 iounit # save a current profile - call sveprf(iounit)
trial 91 iounit # load a saved profile - call ehload(iounit)
trial 92 iounit # save a current profile - call dvsave(iounit)
trial 93 iounit # load a saved profile - call dvload(iounit)
trial 94 ilayer sigma-x sigma-z [coeff thickness]
trial 95 ilayer rlayer(ilayer) rate(ilayer)
trial 96 ilayer (x,z)1 (x,z)2 (x,z)3 ... (x,z)249
trial 101 # (no arguments) optional
trial 102 iwflg(1) . . . . iwflg(5)
trial 104 r1 cm d0 alph
trial 105 fwhm edge
trial 106 itcou sper sigma sptwgt(i)
trial 107 itcou shfdis(i) stddev(i) sptwgt(i) . . . .
trial 108 lincou shfper wgtlin(i) . . . .
trial 109 lincou dislin(i) wgtlin(i) . . . .
trial 110 cpwind isym shift
trial 111 dose
trial 112 npts frac
trial 113 cdose
trial 114 # run E-beam development
trial 115 itest idep iskip
trial 201 wavelength (um) [weight wavelength2 weight2 ...]
trial 202 exposure.dose (mJ/cm**2)
trial 204 numerical.aperture
trial 205 separation [ C1 C2 ]
trial 206 linewidth (um)
trial 207 spacewidth (um)
trial 208 linewidth spacewidth (um)
trial 209 [model [ parameters ... ] ]
trial 212 [start [ stop [ steps ]]]
trial 213 wavelength A B C n k thickness
trial 214 # run photolithography machines
trial 215 n k [(n k thickness) ... ]
trial 216 # run image machine
trial 217 # run exposure machine
trial 218 # run development machine
trial 301 ipflgs(1)...ipflgs(8)
trial 303 itype e0 dose(x10**13) bangle
trial 304 spce absthk delta supthk xray(1)...xray(9)
trial 305 abstyp dele psihlf dosthr cntrst psibak delew
trial 306 resthk reswin shift sgres1 sgres2
trial 308 axepts axbpts
trial 309 horpts que
trial 310 frac
trial 311 r1 cm d0 alph
trial 312 # run ion beam development machine
trial 313 engmax idep iskip ityplt
trial 314 devsrt devend devinc npts
trial 321 # initilize(no argument)
trial 322 ioflag
trial 323 locmsk [thkmsk [theta [mu]]]
trial 324 thktlr [mut [r1t [cmt [d0t [alphat]]]]]
trial 325 thkblr [mub [r1b [cmb [d0b [alphab]]]]]
trial 326 layer [auabso [fractn [range]]]
trial 327 ncol [nrow]
trial 328 zfrac(1) [zfrac(2) [.....[zfrac(20)]..]
trial 329 cpwind [isym [shift]]
trial 330 [flux]
trial 331 npts
trial 332 # run X-ray development
[]
A KEYWORD/TRIAL SUMMARY
Keywords can be added or changed by the user to meet individual
needs. See chapter 3 for more information. The string length of
the keyword is restricted to a lenghth of ten and a TRIAL number
is associated with each keyword. The general form is "KEYWORD
arg1 arg2 arg3 ... argn" where arguments arg1 to argn are parame-
ters relevant to the keyword. The TRIAL number can also be sub-
stituted in the place of the keyword. For example, "LAMBDA
0.4358" and "TRIAL 201 0.4358" are equivalent. Both statements
specify that lambda for this run is 0.4358 um.
"COMMON" KEYWORD/TRIAL STATEMENTS
______________________________________________________________________
# Comment delimiter in any column. Comments begin in any column
with the sharp sign "#". The rest of the line after the sharp
sign is treated as a comment and skipped over by the program. (
The former convention with and asterisk "*" in column 1 is still
supported although it is not recommended for compatibility rea-
sons.)
END # end The END (TRIAL -2)
statement is equivalent to the STOP (TRIAL -1) statement.
STOP # stop statement STOP (TRIAL
-1) exits the SAMPLE program.
RECOVER # recover RECOVER (TRIAL 0)
allows the user to reset the flags that the program sets inter-
nally when a simple syntax error is detected. On detecting sim-
ple syntax errors the program stops taking action on statements
even though it keeps checking them for syntax errors. By reset-
ting those flags the user tells the program to forget that any
such errors occurred at all before and the program starts execut-
ing the input statements again. Note: no serious errors in exe-
cution can be recovered from in this way.
EXECTIMES # execution times EXECTIMES
(TRIAL 5) prints the (system dependent) execution times of the
program. Its implementation is system dependent. On the UNIX
system it prints a line giving the CPU time, and the system time
used up to that point, and the time of day.
LPRWIDTH [number.of.columns] LPRWIDTH (TRIAL 6) sets the line-
printer width in columns for adjusting lineprinter plot widths if
possible. The optional argument NUMBER.OF.COLUMNS is the width
of the lineprinter plot in characters. Minimum and maximum lim-
its are imposed on the value specified. If the argument is omit-
ted the user is told the current value in effect.
IFCDBD [depth] IFCDBD (TRIAL 7) sets the level of debugging out-
put to be printed by the user interface. The optional argument
DEPTH is the level to be set. If it is absent the current value
is displayed by the program. DEPTH is initialized to 1. This
statement is intended to be used for probing in the operation of
the user interface and is not expected to be of much use to the
general users. A higher DEPTH value results in more output gen-
erated by the interface. Currently only the DEPTH values of 2
and 3 are implemented (minimally).
HELP # help HELP (TRIAL 8) is for
runtime help to the user. No help routines currently exist in
SAMPLE 1.8a.
[]
OPTICAL LITHOGRAPHY KEYWORD/TRIAL STATEMENTS
(Image, Exposure, and Development Machines)
______________________________________________________________________
HEATDIFFUS diff.length dimension HEATDIFFUS (TRIAL 1) requests
a post-exposure bake. DIFF.LENGTH is the diffusion length in mi-
crometers. DIMENSION can take the value 1 or 2, which stands for
one or two dimensional diffusion. One dimensional diffusion
takes place in the vertical direction. If no value is entered for
DIMENSION, the program defaults to 2. HEATFIFFUS should only be
used after EXPOSERUN.
OPTDEVELOP idiag ipunch iaccuracy OPTDEVELOP (TRIAL 2) sets
flags for output options. If IDIAG=1, extra diagnostic printout
is produced by the development machine. If IPUNCH=1, the
developed profiles' coordinate data is output to a file called
"f77punch7" for plotting on a graphics terminal or plotter. If
IACCURACY=1, a slower, more accurate algorithm is used which uses
more string points and produces more accurate plots. It makes a
difference only for the high resolution graphics device plots;
little effect occurs for line printer plots.
OPTIMGEXP intplot mtfplot ipunch M(E,Z) M(X,Z) OPTIMGEXP (TRIAL
3) sets output options of the image and exposure lab machines.
If INTPLOT=1, the intensity plot is printed. If MTFPLOT=1, the
MTF plot is printed. If IPUNCH=1, the intensity or MTF plot coor-
dinate data is output to a file called "f77punch7" for plotting
on a graphics terminal or plotter. If M(E,Z)=1, a table of M
values as a function of energy (E) and depth (Z) is output. If
M(X,Z)=1, a table of M values as a function of horizontal posi-
tion (X) and depth (Z) is output. Setting either of these param-
eters to "0" suppresses the output.
PROFSAVE iounit PROFSAVE (TRIAL 9) saves the current profile in a
file named PRFSAV# where "#" is iounit specified. Iounit must be
an integer greater than 9. For example: PROFSAVE 15 would save
the profile in file 'prfsav.15'.
PROFLOAD iounit PROFLOAD (TRIAL 10) loads a profile stored in the
file "PRFSAV.#", where "#" is the iounit specified. For example:
PROFLOAD 15 would load the profile stored in file 'prfsav.15'
into memory.
RESDEVPAR # rate parameters RESDEVPAR (TRIAL 11) prints out a
list of exposure and rate parameters for various photoresists.
READIMAGE READIMAGE (TRIAL 18) reads the intensity image from the
punch file 2ddat (which has been generated by the SPLAT program.)
PHASEMASK (magnitude phase distance) ... PHASEMASK (TRIAL 19)
is the phase shift mask specification keyword. Up to 33 triplets
may follow. Each triplet specifies the MAGNITUDE, PHASE shift,
and DISTANCE of a region on the mask. The program makes an even,
periodic extension of the function specified. For example, to
specify a series of lines and spaces 1.5 micron wide:
PHASEMASK (1.0 0.0 1.5) (0.0 0.0 1.5) To specify the above
mask with every other space phase shifted 180 degrees: PHASEMASK
(1.0 0.0 1.5) (0.0 0.0 1.5) (1.0 180.0 1.5) The program
makes an even, periodic extension in the following manner. The
length of the first and last regions are halved. The resulting
regions now represent half of one period. The other half period
is the mirror image of the first. This entire period is then re-
peated. The line edge for the window (see HORWINDOW (TRIAL 22))
is the division between the first and second regions.
PARCOHDEF icoh sigma def.dist [ iold ] PARCOHDEF (TRIAL 20) is a
coherence/defocus keyword. When ICOH is 1 then pure incoherence
is indicated, otherwise partial coherence with a filling factor
value of SIGMA is assumed for ICOH = 0. When ICOH = 2 partial
coherence information is printed (not needed by most users). In
both cases the defocus distance in micrometers is DEF.DIST. If
IOLD = 1 the old version's partial coherence routines are used,
otherwise the new routines for partial coherence are used. {Note
the old version's partial coherence is for a square aperture
only, and so now requires a APERSHAPE (TRIAL 32 1) statement be-
cause the default aperture shape is chosen to be circular in this
version. The output notifies the user of the algorithm chosen.}
MULWAVRES Nlambda lambda1...lambdaN (A1 B1 C1)...(AN BN CN)
int1...intN MULWAVRES (TRIAL 21) is the trial state-
ment to specify the resist parameters when multiple exposure
wavelengths are present. NLAMBDA is the number of wavelengths,
LAMBDA1 ... LAMBDAN is the set of wavelength values, (A1 B1
C1)... begins the sets of ABC parameters for the resist, one set
for each of the N wavelengths. These ABC sets take up arguments
n+3 to 4n+2. The relative intensities at the various wavelengths
(INT1 ... INTN) are the set of arguments from 4n+3 to 5n+2. A
maximum of five wavelengths can be declared by this statement. An
example follows in which there are two wavelengths, .40 and .44,
with relative intensity .4 and .6, and with ABC set of 1.0
.006 15 for the .40 micrometer wavelength, and 2.0 .007 20
for the .44 wavelength. The trial statement would be: MULWAVRES
2 .40 .44 1. .006 15 2. .007 20 .4 .6 The relative in-
tensities specified in MULWAVRES (TRIAL 21) do not have to be
normalized (i.e. they do not have to add up to 1.0). The program
normalizes them (assuming their sum is not 0.0). So entering
numbers proportional to their relative or actual intensities will
work.
HORWINDOW width [edge] HORWINDOW (TRIAL 22) is used to specify a
window. WIDTH is the horizontal window width in which attention
is to be focussed. EDGE is the location of the mask edge from
the left side of the window boundary. Both the arguments are in
units of micrometers. EDGE is optional and need not be speci-
fied.
CONTDEVEL CONTDEVEL (TRIAL 23) statement is used to inhibit the
develop machine from resetting so that the development may be
continued with another call to DEVELOPRUN. This allows a descum
to be performed. An alternate command for descumming is DES-
CUMSPEC which is explained later in this chapter. (The etch rate
is set by the user to a value independent of the exposure). To
use this feature, simply call " CONTDEVEL " and then redefine
the etch rates in the next statement. Continue developing with
DEVELOPRUN. OPTRUNALL CONTDEVEL DEVTIME 20 100, 5 DEVRATE 1 (2.3
0 0) DEVELOPRUN Note that the etchrate is 10 angstroms per second
( exp(2.3) ) and 5 development profiles from 20 to 100 seconds
are requested. This corresponds to a descum of 200 to 1000
angstroms in 5 steps.
PRINTMVALS flag PRINTMVALS (TRIAL 24) prints the PAC CONCENTRA-
TION (M values) in the resist following exposure to a separate
file called MVALS.DAT. If FLAG = 1, the M values at each loca-
tion in the resist are printed for contour plotting. The format
for this file is consistent with that for the CONTOUR plotting
package released with SAMPLE version 1.8. If FLAG = 0, the M
valuees are printed as a function of the exposure dose and the
depth into the resist.
CONENHMAT thick Nlam (lam1 na1 nb1 A1 B1 C1)...(lamN naN...) meth
The CONENHMAT (TRIAL 25) statement specifies the parameters for a
layer of contrast enhancement material (CEM). THICK is the
thickness of the CEM in micrometers and NLAM is the number of
wavelengths used in the exposure. For each wavelength, LAM is
the value of the wavelength in micrometers, (A,B,C) are the A, B,
C parameters of the CEM and (NA,NB) define the real part of the
refractive index, n, by: n = na*M + nb, where M is the normal-
ized amount of photoactive compound remaining in the CEM. The
imaginary part of the refractive index is computed by the pro-
gram. If METH = 1, the standard numerical solution is used. If
METH = 0, an approximate analytical solution by Babu and Barouch
and the standard numerical solution are used together for in-
creased speed. METH = 0 can only be used for single wavelength
exposures. The CONENHMAT statement can only be specified after
the photoresist parameters have been given in the RESMODEL state-
ment and, when multiple wavelengths are present, the MULWAVRES
statement. The order of the wavelengths in the CONENHMAT state-
ment must match the order given in the MULWAVRES statement.
SHIPLEYAHR [btemp [btime [diff.length [k1 exp1 [ea1 [k2 exp2 [ea2
[m]]]]]]]] The SHIPLEYAHR (TRIAL 26) command specifies the PEB
conditions for Shipley SNR 248 acid hardening resist for the
deep-UV. This command must be specified before the EXPOSERUN com-
mand. The BTEMP parameter is the bake temperature in degrees Cel-
sius and BTIME is the bake temperature in seconds. The DIFF.
LENGTH parameter specifies the acid diffusion length. The Ki,
EXPi, EAi, and M modify the rate coeffs for the reactions during
the bake. EAi is the activation energy in eV while Ki and EXPi
are the mantissa and exponent of the pre-exponential (Ki x
10^EXPi) in 1/sec. With i = 1, the coeff. for the acid catalyzed
reaction is specified and for i = 2, the coeff. for the acid loss
reaction is specified [Fer90a]. M specifies the power of the acid
concentration in the acid catalyzed reaction. The default values
are BTEMP = 130.0 degrees Celsius, BTIME = 60.0 seconds,
DIFF.LENGTH = 0.08 microns, K1 = 6.56, EXP1 = 11, K2 = 4.6, EXP2
= 5, EA1 = 0.88, EA2 = 0.43, and M = 1.42.
DEFOCUS [df.dist] DEFOCUS (TRIAL 28) sets the defocus distance
(DF.DIST) in micrometers of the projection printer if the option-
al argument DF.DIST is present. If DF.DIST argument is absent it
only outputs the current value of the defocus distance.
REFRACMULL
ni (n(i-1) k(i-1)) ... (n0 k0) #for lambda1
ni (n(i-1) k(i-1)) ... (n0 k0) #for lambda1
...
ni (n(i-1) k(i-1)) ... (n0 k0) #for lambdaN REFRACMULL
(TRIAL 31) allows the user to specify the refractive index values
for multiple wavelength exposures for all the layers of the
wafer. A maximum of 3 wavelengths, and 4 layers including the
resist and the substrate can be handled by this statement. Its
syntax is: REFRACMULL
#n {for the photoresist, PR} ) at
#n, #k {for the layer below the PR} ) wavelength
... ) 1
#n, #k {for the substrate} )
#n, )
#n, #k, ) at wavelength 2
... )
#n, #k, )
... ... ) ...
where #n is the numerical value of the real part of
the refractive index, and #k is the imaginary part. Also this
REFRACMULL statement assumes that a MULWAVRES has occurred before
this and the LAMBDA1, LAMBDA2, ... correspond to the ones in that
trial statement. The correspondence should be maintained by the
user. Any error in that correspondence is not detected by the
program. Similarly, a LAYERS statement should occur before this
REFRACMULL statement. That LAYERS statement should give the
number of layers and their thicknesses.
APERSHAPE ishape The APERSHAPE (TRIAL 32) command specifies the
shape of the aperture for projection printing. If ISHAPE=0 a cir-
cular aperture is used for the projection system, if ISHAPE=1 a
square aperture is used. (Avoid other values even though at
present they would give a circular aperture).
IRREGUMASK l1 s2 l2 s1 # "irregular" mask IRREGUMASK (TRIAL
45) tells the program that the mask is periodic with two dif-
ferent linewidths (opaque regions) and two different space widths
(transparent regions). Considering one of the lines (the first
line, line "L1") to be centered at x=0, and having a width of L1
micrometers, the space on its right has width S2 micrometers,
then the line to the right of "S2" has width L2, and finally to
the right of all this is the space with width S1. The default
window set by this trial statement extends from x=0 to
x=(L1/2+S2+L2+S1/2) i.e. from the center of "L1" to the center of
"S1" which is the half period of the mask pattern. The pattern
is assumed symmetric around x=0 in the above configuration. Thus
in a full period there are two lines of width L2 and two spaces
of width S2, but only one each of L1 and S1. The PHASEMASK state-
ment (TRIAL 19) allows a more flexible format than this state-
ment.
INORGANIC a b c d tau initime finaltime numplot INORGANIC (TRIAL
46) computes the photo-doped silver distribution profile in a
bi-level GexSe 1-x inorganic resist system. The top level is the
GexSe 1-x resist and the bottom level is a highly absorptive
layer so that light reflection back to the top level is small.
Equations for the GexSe 1-x resist under exposure can be found in
IEEE Trans. Electron Dev. Jan. 1985 [Leu85d] and also in the
dissertation [Leu85t]. Arguments A, B, C, and D are the inorgan-
ic resist parameters. They are the bleachable absorption coeffi-
cient, non-bleachable absorption coefficient, resist sensitivity
factor and diffusivity of Ag in Ag2Se, respectively. Argument TAU
is the incremental time step used by the program. The larger the
step size, the faster the computation but also the larger the er-
ror of the result. Arguments INITIME and FINALTIME are the ini-
tial and final exposure time for the output profile. Argument
NUMPLOT is the number of such output profiles to be plotted. Un-
its of arguments INITIME, FINALTIME, and NUMPLOT are in seconds.
For best result, use smaller time increment between profiles out-
put.
DESCUMSPEC descum1 [ descumf nsteps ] DESCUMSPEC (TRIAL 60) is
for descumming specification. DESCUM1 must be present and it
specifies the amount (in micrometers) of the first descummed pro-
file. DESCUMF is optional and if present it specifies the amount
of descum, in micrometers, for the final (of two or more) profile
to be generated. If the next optional argument NSTEPS is not
present only 2 profiles are generated for the two descumming
amounts specified. If NSTEPS is specified then that many equi-
spaced profiles are generated between the first and the final
profiles (both inclusive). Note: if DESCUMF is present it must
be larger than DESCUM1. For example: DESCUMSPEC 0.100 0.150 3
specifies that descumming is to be performed for 0.100, 0.125,
and 0.150 micrometers. (i.e. between 0.100 and 0.150 micrometers
generate 3 profiles). Descumming is simulated by the Development
machine itself, so some of the output uses the terminology of the
development machine. {Additionally, there is a descumming algo-
rithm included with the etching routines which includes specifi-
cation by rate(cf. ETCHRATES) and time (cf. ETCHTIME) if the user
prefers to control descumming by a rate rather than an amount.}
SURFINHIB reduc1 [depth1 [reduc2 [depth2]]] SURFINHIB (TRIAL 62)
models the surface inhibition effect due to baking. This routine
is not valid with devrate 2 (The R function already includes the
surface-rate-retardation). The program uses a two-segment,
piece-wise linear fit to calculate the rate reduction at various
depths due to inhibitor dissociation. REDUC1 is the amount of
reduction by which the rate of development is reduced at the sur-
face. DEPTH1 sets the depth in micrometers of the first segment.
REDUC2 is the amount of reduction at DEPTH1 and DEPTH2 is the
depth of the second segment. The default values of the optional
parameters are as follows: DEPTH1=0.04 micrometers,
REDUC2=0.4*REDUC1, DEPTH2=0.2 micrometers. For example: SUR-
FINHIB 0.8 would specify that the surface rate is to be reduced
by a fraction of 0.8 (i.e. to 20% of its value otherwise), and at
depth 0.04 micrometers it should be reduced by a fraction of 0.32
(=0.4*0.8), and below 0.2 micrometers from the top surface the
rate is unaffected. As another example of its usage: SURFINHIB
0.8 0.04 0.32 0.2 would achieve exactly the same effect as the
above example.
FLAREINTEN flare FLAREINTEN (TRIAL 30) simulates scattered light
during printing, where FLARE specifies the amount of flare as a
fractional intensity due to scattered light in the areas that
would be totally dark otherwise. As an attempt to calculate the
changed intensity values due to the scattered light, the normal-
ized intensity value of I is replaced by (I + (1.0 - I)*FLARE) at
all points where the intensity is computed. For example FLAREIN-
TEN 0.04 would add a 4% FLARE in the dark regions and a propor-
tionately smaller flare in other regions. An image must be
present before FLAREINTEN can be executed (i.e. IMAGERUN must be
executed before FLAREINTEN can be used). FLAREINTEN modifies the
current image immediately (i.e. FLAREINTEN is an 'action' state-
ment) producing the corresponding plot of the new aerial image.
Beware: no rigorous physical models are involved in this approxi-
mation.
VERTRESPTS [ nprlyr ] VERTRESPTS (TRIAL 35) sets the number of
vertical sublayers into which the resist layer is divided for nu-
merical computations, where NPRLYR is optional. If NPRLYR is not
present (or is negative) the program reverts to calculating the
number of sublayers in the expose machine (which is the default
mode). If NPRLYR is present, and has a sensible value (truncated
to be an integer), the number of sublayers is set to be that
value for all the calculations. If the value is not sensible
then it is replaced by some other value that the program can han-
dle and the user is notified of this change. the maximum value
for NPRLYR is 400.
DEVSCALPAR [sclfct [sclx [sclz ]]] DEVSCALPAR (TRIAL 36) enables
the user to adjust the string segment length limits as used in
the develop machine to advance the profile. This is intended for
knowledgeable users who want to experiment with the string ad-
vancement algorithm. SCLFCT is the scale factor by which the
internal parameters for checking the length of string segments in
subroutine deloop are scaled. SCLX and SCLZ are the scale fac-
tors used similarly for checking the string segment lengths in
subroutines chkr, and deloop. For example, DEVSCALPAR 1.0 1.0
1.0 would set all these scale factors to unity and so they would
not have any special effect.
INTENVSDEP # print intensity vs. depth (from expose) IN-
TENVSDEP (TRIAL 37) has no additional arguments. When used it
causes the program to print out the intensity in the resist layer
as a function of depth at the beginning of the exposure. It
should be used only after the expose machine has been run (since
the exposure machine calculates and saves the intensity in the
resist at the start of the exposure.)
TIMEGAPBRK [ tbkadd ] TIMEGAPBRK (TRIAL 38) changes the time
after break-through at which the time-step changes. If TBKADD is
present it is taken to be the time interval in seconds after the
developer breaks through the resist such that after that time in-
terval the program increases the size of the time step for the
advancement of the string. A proper choice of TBKADD, usually
about 20 seconds (the default) can speed up the program without
significantly affecting the accuracy.
MINIDEFCON cont dfdist uplim lowlim plotflag [teststep] MINIDEF-
CON (TRIAL 71) is a mini-controller which calls the image machine
iteratively until the user-specified contrast(CONT) is achieved.
The defocus is initially set at DFDIST and iterated with a
Newton-Raphson algorithm until the desired contrast is achieved.
The test step in defocus in the algorithm is 0.5 micrometers, and
may be overridden by specifying a different value as TESTSTEP.
Stability is not guaranteed, so upper and lower limits must be
specified for defocus as UPLIM and LOWLIM. Typical values to use
are 0 and 10 micrometers respectively. Ordinarily, plots are not
produced. If they are desired, then PLOTFLAG must be set to 1 or
more. A patched feature is the ability to switch to image slope
rather than contrast as the parameter to be controlled. To do
this one merely uses a negative value of CONT whose absolute
value is the desired image slope. All the rest of the parameters
retain their same function.
MINILOOPIM param flag1 flag2 repeat startval increval MINILOOPIM
(TRIAL 72) invokes a minicontroller which repeatedly calls the
image machine (IMAGERUN) for the number of times called for by
the user (REPEAT). After each call it increments one image
machine parameter (determined by the value of PARAM). The start-
ing value of the parameter to be incremented is give by STARTVAL
and the increment by INCREVAL. The value of PARAM must be an in-
teger between 1 and 13. If PARAM is 1, linewidth and space is to
be incremented (l=s) with constant window (which should be preset
wide enough with trial 22 for the largest linewidth to be encoun-
tered). If PARAM is 2, an isolated line is to be incremented,
again with fixed window which must be preset. If PARAM is 3, an
isolated space is to be incremented, again with fixed window
which must be preset. If PARAM is 4, the parameter to be incre-
mented is defocus: if 5, then the parameter is numerical aper-
ture, if 6 then wavelength, if 7 then sigma. If PARAM is 8 the
parameter to be incremented is contrast. This is tricky, because
specifying contrast itself causes multiple calls to image in a
subroutine which adjusts defocus via a Newton-Raphson algorithm
until the desired contrast is reached. If PARAM is 9, the parame-
ter to be incremented is image slope. Again image is repeatedly
called with appropriate focus adjustments to achieve the slope
desired. Finally PARAM is 11, 12 or 13 are identical in effect
to 1,2 or 3 respectively, except that the window is automatical-
ly set by the controller to be equal to half the linewidth (or
spacewidth if PARAM = 13). WARNING: because this is a looping
controller, it can produce a lot of output. Beginning users
should proceed with caution. Also FLAG1 and FLAG2 are no longer
in use, therefore let FLAG1=FLAG2=0 for convenience.
SUBSTREFL mag ang [n] [(mag2 ang2 n2) ... (magi angi ni)] The
SUBSTREFL (TRIAL 73) statement specifies the magnitude (real) and
the phase (degrees) of the reflection coefficient of the combined
layers beneath the photoresist. The corresponding substrate is
treated as an infinite layer in the simulation. This command re-
places the LAYERS command for single wavelength exposures and the
REFRACMULL command for multiple wavelengths. N is the refractive
index of the photoresist and is only required when multiple
wavelengths are specified. When one wavelength is used, the in-
puts should contain the magnitude and the phase of the reflection
coefficient, while the photoresist refractive index will be ob-
tained by the program from the RESMODEL inputs. SUBSTREFL should
only be used after the RESMODEL command and MULWAVRES for multi-
ple wavelengths. Up to ten magnitudes, angles and n's can be en-
tered at one time. For example: SUBSTREFL 1 180 1.68 This speci-
fies a magnitude of 1, a phase of 180 degrees and a photoresist
reflective index of 1.68 for the combined layer below the pho-
toresist.
LAMBDA wavelength [weight wavelength2 weight2 ...] The LAMB-
DA (TRIAL 201) statement specifies the illumination spectrum used
in the imaging system. It can be used in two different modes:
single wavelength or multiple wavelength illumination.
LAMBDA 0.4358
specifies that it is a single wavelength illumination at 0.4358
um.
For multiple wavelengths the statement
LAMBDA (WAVELENGTH1 WEIGHT1) [(WAVELENGTH2, WEIGHT2)]*
where the pair (WAVELENGTH1 WEIGHT1) gives the wavelength of the
light source in micrometers, and the relative intensity at that
wavelength (can be followed by other similar pairs) is used. The
total number of pairs specified should be less than or equal to
10 . The program sums up all the relative intensities and then
normalizes them by dividing each of them by that sum. After this
normalization only these normalized values are stored in the pro-
gram (which sum up to 1.0).
LAMBDA (0.4358, 1.0) (0.4047 0.5)
specifies 1.0/(1.0 + 0.5) = 0.67 (=67%) relative intensity at the
wavelength of 0.4358 micrometers and 0.5/(1.0 + 0.5) = 0.33 rela-
tive intensity at 0.4047 micrometers.
DOSE exposure.dose The DOSE (TRIAL 202) statement speci-
fies the amount of energy exposure that impinges upon the wafer
during exposure. EXPOSURE.DOSE is the total intensity incident
at the mask in units of mJ/(cm**2).
DOSE 150
specifies that in large clear areas the wafer would have 150
mJ/(cm**2) incident on it.
PROJ numerical.aperture The PROJ (TRIAL 204) specifies the
imaging system to be projection-type with a numerical aperture
(NA) of the lens equal to NUMERICAL.APERTURE.
PROJ 0.30
specifies a projection-type system with an NA = 0.30
CONTACT separation [ C1 C2 ] The CONTACT (TRIAL 205) speci-
fies the imaging system to be a contact-type imaging system with
SEPARATION giving mask to wafer separation in micrometers, C1,
C2 giving the C1 and C2 (micrometers) parameters for such a sys-
tem as specified by the following equation:
I(x)=I0*C1*exp(-C2*x/sqrt(2.0/(SEPARATION*lambda)))
LINE linewidth The LINE (TRIAL 206) statment specifies the
mask to be a single line (LINE) of width LINEWIDTH. Use of this
command states that the mask has only a line (fully opaque
(dark)) region LINEWIDTH micrometers wide (e.g. LINE 1.25 speci-
fies a line with a width of 1.25 micrometers).
SPACE spacewidth The SPACE (TRIAL 207) statement specifies
the mask to be a single space (SPACE) of width SPACEWIDTH. Use
of this command states that the mask has only a space (fully
transparent) region SPACEWIDTH micrometers wide (e.g. SPACE 1.25
specifies a space with a width of 1.25 micrometers).
LINESPACE linewidth spacewidth THE LINESPACE (TRIAL 208) state-
ment specifies the mask to be a periodic pattern of lines and
spaces (LINESPACE). LINESPACE LINEWIDTH SPACEWIDTH states that
the mask is a grating with a periodic pattern of lines and
spaces, LINEWIDTH and SPACEWIDTH micrometers wide respectively.
DEVRATE [model [ parameters ... ] ] The DEVRATE (TRIAL 209)
specifies the model and parameters for the development rate func-
tion of the resist. DEVRATE is used either to print out its
current form or to set the development rate function for photol-
ithography. The "model" of the rate function is either 1) the
analytic function with E1, E2, E3 parameters i.e. rate(M) =
exp(E1 + E2*M + E3*M*M)/10000 um/sec, 2) the R type i.e.
rate(M) = f(M,z)*Rb(M) where Rb(M) = 1.0/((1.0-M*exp(-R3*(1.0-
M)))/R1 + M*exp(-R3*(1.0-M))/R2) um/sec, and f(M,z) = 1-(1-(R5-
(R5-R6)*M))*exp(-z/R4), 3) Mack model i.e. RATE =
RMAX*(A+1)*(1-M)**N/(A+(1-M)**N) + RMIN, or 4) Shipley SNR 248
resist dissolution rate i.e. RATE = R0(1 - CE/C0)**ALPHA.
DEVRATE
will just print out the current form of the rate function being
used in the program. The default rate function is the (E1, E2,
E3) function with their default values as given below.
DEVRATE 1 [E1 [E2 [E3]]]
specifies that the (E1, E2, E3) function is to be used. E1, E2,
E3 (= e1, e2, e3) are dimensionless quantities. If they are ab-
sent in the input then the previous stored values (or default
values if no previous input values for them were input) are used
for them. The default values are: E1 = 5.63, E2 = 7.43, E3 =
-12.6 .
DEVRATE 2 [R1 R2 R3 [R4 R5 R6 [R7 R8 [R9 R10]]]]
specifies that the R function is to be used. The R function in-
cludes surface-retardation as well as bulk rate. The first R1,
R2, and R3 are for bulk rate and the next R4, R5, and R6 for
surface-retardation. R7 to R10 describe extraordinary surface-
retardation. R1 and R2 are in um/sec, and R3 is dimensionless,
R4 is in um, and R5 to R10 are dimensionless ratios which are all
positive and less than one. The default values are R1 = 0.23
um/sec, R2 = 0.0016 um/sec, R3 = 5.6, R4 = 0.25 um, R5 = 0.62,
and R6 = 0.08. (A list of common parameters for the R function
can be obtained by executing RESDEVPAR (TRIAL 11) statement.)
DEVRATE 3 RMAX RMIN A N
specifies the Mack model which is based on a kinetic model of the
development process involving the diffusion of the developer to
the resist surface, and the reaction of the developer with the
resist. The dissolution rate is related to RMAX, the development
rate of fully exposed resist; RMIN, the development rate of unex-
posed resist; A, a constant based on the threshold PAC concentra-
tion; and N, the number of exposure converted PAC molecules which
react with the developer to dissolve a resist resin molecule. The
default values are: RMAX = 0.0375um/sec, RMIN = 0.0010um/sec, A =
0.005 and N = 5.6.
DEVRATE 4 ALPHA R0 C0
specifies the development model originally derived for the Ship-
ley SNR 248 resist. The dissolution rate is related to the
number of cross-linking events by RATE = R0(1 - CE/C0)**ALPHA.
Where CE is the number of crosslinking events and R0, C0, and AL-
PHA are fitting parameters. The values for Shipley SNR 248 resist
are: ALPHA = 6.5, R0 = 0.035 um/sec, and C0 = 6.3.
DEVTIME [start [ stop [ steps ]]] The DEVTIME (TRIAL 212)
statement specifies the development time as either a single time
interval, or a series of time intervals steps. START = initial
value of the development time in seconds, STOP = final value of
the development in seconds, STEPS = number of steps within that
range including the initial and the final values.
DEVTIME 20 30, 3
specifies an initial development time of 20 seconds, final
development time of 30 seconds, and 3 steps in that range.
Hence, the wafer will be developed at ((30-20)/(3-1) =) 5 second
intervals for 20, 25, 30 seconds before the development contours
are plotted on the output.
RESMODEL wavelength A B C n k thickness The RESMODEL (TRIAL
213) statement specifies the resist parameters relevant to the
exposure process. WAVELENGTH = wavelength in micrometers at
which the parameters are specified. (A, B, C) give the A, B, C
parameters of the photoresist (N, K) gives the refractive index
of the photoresist as a complex number = (N + i * K) {The value
of K gets ignored because it is later superseded by the value
computed from A and B according to the formula: k = -(A+B) *
(wavelength)/(4*pi) where pi = 3.14159265... } THICKNESS = gives
the thickness of the photoresist in micrometers.
OPTRUNALL OPTRUNALL (TRIAL 214) runs the photolithography
machines in sequence: image, exposure, and development. The
machines can also be run indepedently by using IMAGERUN, EX-
POSERUN, and DEVELOPRUN.
LAYERS n k [(n k thickness) ... ] The LAYERS (TRIAL 215)
statement specifies the refractive indices and thicknesses of all
the layers of the wafer except the photoresist layer. The sub-
strate is considered to be infinitely thick. The wafer is as-
sumed to consist of planar layers on a flat substrate. The first
N gives the real part of the refractive index of the substrate of
the wafer, and the first K gives the imaginary part of that in-
dex. (The substrate is considered to be infinitely thick). The
following numbers give information about the other layers present
on the wafer (only a maximum of 4 such layers other than the sub-
strate, oxide and/or nitride for example, are allowed) in the
following fashion : [(N = real part of index of refraction for
that layer K = imaginary part of the refractive index for it
THICKNESS = the thickness of the layer)]. The layer closest to
the substrate is specified first, etc. The photoresist layer is
not considered to be a part of these layers (it is specified in
the RESMODEL statement).
LAYERS (4.73, -0.136), (1.47, 0.0, 0.0741)
specifies that the substrate has the refractive index (4.73 +
i*(-0.136)), and there is one more layer with refractive index
(1.47 + i*0.0) (typical oxide index) and a thickness of 0.0741
um. The resist layer on top of these is specified in a separate
RESMODEL statement. The user should be careful to specify the
proper wavelength at which these refractive index values hold in
a LAMBDA statement. (See also the REFRACMULL (TRIAL 31) state-
ment if the illumination has multiple wavelengths.)
IMAGERUN IMAGERUN (TRIAL 216) runs the image machine.
EXPOSERUN EXPOSERUN (TRIAL 217) runs the exposure machine.
DEVELOPRUN DEVELOPRUN (TRIAL 218) runs the development machine.
Additional Notes on Simulation of Shipley SNR 248 Resist with
SAMPLE. Simulation of Shipley SNR 248 resist consists of three
steps: the exposure, the post-exposure bake (PEB), and develop-
ment. As with standard g-line resists, the exposure is modeled
with Dill's ABC parameters. This is specified in SAMPLE using the
RESMODEL command (see SAMPLE manual). The parameters for the
simulation are: A = -0.71 1/um, B = 1.16 1/um, and C = 0.0023
cm**2/mJ. The refractive index is n = 1.79. The PEB is specified
by the bake temperature and the bake time. These two parameters
are specified in the SHIPLEYAHR command. The bake temperature is
in degrees Celsius and the bake time is in seconds. The default
values are temp = 130 and time = 60. This command must be speci-
fied before EXPOSERUN command. The resist development is simu-
lated with the DEVRATE command as follows: DEVRATE 4 ALPHA R0 C0
The development model and the parameters ALPHA, R0, and C0 are
described by Ferguson et al.[1]. The values for Shipley SNR 248
resist are: ALPHA = 6.5, R0 = 0.035 um/sec, and C0 = 6.3. An ex-
ample input file is given in SAMOP10 in the following section.
[1] R.A. Ferguson, J.M. Hutchinson, C.A. Spence, and A.R.
Neureuther
"Modeling and Simulation of a Deep-UV Acid Hardening
Resist."
Electron, Ion and Photon Beam Science and Technology,
1990 []
PHOTOLITHOGRAPHY EXAMPLES
Recall that in these, and all other examples which follow, commas
and parentheses are treated as blanks by the program.
# OPTICAL LITHOGRAPHY EXAMPLE
# SINGLE WAVELENGTH PROJECTION (DEFAULTS)
# Input File: samop0
lambda 0.4358 ; # lambda parameter
proj 0.28 ; # numerical aperture
linespace 1.25 1.25 ; # linespace parameters
parcohdef 0 0.7 1.5 ; # sigma and defocus
imagerun ; # run image machine
resmodel ((0.4358))
(0.551, 0.058, 0.010)
(1.68, ((-0.02))) (0.7133) ; # resist exposure parameters
layers (4.73,-0.136)
(1.47,0.0,0.0741) ; # layer parameters
dose 150 ; # dose for exposure
exposerun ; # run exposure machine
devrate 1 (5.63, 7.43, -12.6) ; # resist development parameters
devtime 15 75, 5 ; # development times
developrun ; # run development machine
______________________________________________________________________
# OPTICAL LITHOGRAPHY EXAMPLE
# SINGLE WAVELENGTH PROJECTION WITH DESCUM
# Input File: samop1
lambda 0.4358 ; # lambda parameter
proj 0.28 ; # numerical aperture
linespace 1.25 1.25 ; # linespace parameters
optimgexp 1 0 1 0 0 ; # profile coordinates for plot
parcohdef 0 0.7 1.5 ; # sigma and defocus
imagerun ; # run image machine
resmodel ((0.4358))
(0.551, 0.058, 0.010)
(1.68, ((-0.02))) (0.7133) ; # resist exposure parameters
layers (4.73,-0.14)
(1.47,0.0,0.0741) ; # layer parameters
dose 150 ; # dose for exposure
exposerun ; # run exposure machine
optdevelop 0 1 0 ; # profile coordinates for plot
devrate 1 (5.63, 7.43, -12.6) ; # resist development parameters
devtime 15 75, 5 ; # development times
developrun ; # run development machine
descumspec 0.02, 0.04, 3 ; # run descum
# OPTICAL LITHOGRAPHY EXAMPLE
# TWO WAVELENGTH PROJECTION
# Input File: samop2
optimgexp (1 0 1), (0 0) ; # profile coordinates for plot
lambda (0.4358 1.0),
(0.4047 0.50) ; # multiple wavelengths
proj 0.28 ; # numerical apeture
linespace 1 1 ; # linespace
parcohdef 0 0.7 2.0 ; # sigma and defocus
imagerun ; # run image machine
dose 80 ; # dose
layers (4.82 -0.0117), # substrate refractive index
(1.47 0.0, 0.0737) ; # oxide layer on substrate
# refractive index and thickness
resmodel 0.4358
(0.551 0.058 0.010),
(1.68 (-0.02)), 0.7133 ; # resist parameters
mulwavres 2 0.4358 0.4047 # two wavelengths
(0.551 0.058 0.010), # A B C parameters at 1st wavelength
(1.055 0.094 0.020), # A B C parameters at 2nd wavelength
1.0 0.5 ; # weighting factors.
refracmull
(1.68 # refractive indices, 1st wavelength
1.47 0.00
4.82 -0.117),
(1.67 # refractive indices, 2nd wavelength
1.47 0.00
5.61 -0.190) ;
exposerun ; # run expose machine
optdevelop 0 1 0 ; # profile coordinates for plot
devtime 15 75, 5 ; # development times
developrun ; # run development machine
# OPTICAL LITHOGRAPHY EXAMPLE
# SINGLE WAVELENGTH WITH PROXIMITY EFFECT
# Input File: samop3
optimgexp 1 0 1 0 0 ; # image intensity plot
lambda 0.4358 ; # wavelength
proj 0.167 ; # numerical aperture
irregumask 5.0 2.0 2.0 5.0 ; # complex mask
parcohdef 0 .37 0.0 ; # partial coherence factor
imagerun ; # run image machine
______________________________________________________________________
# OPTICAL LITHOGRAPHY EXAMPLE
# EXPOSURE WITH CEM
# Input File: samop4
#
# Optical System
lambda 0.4358 ; # exposure wavelength
proj 0.28 ; # numerical aperture
parcohdef 0 0.7 1.39 ; # sigma and defocus
#
# Mask
linespace .75 .75 ; # linespace parameters
imagerun ; # run image machine
#
# Photoresist
resmodel (0.4358)
(0.551 0.058 0.010)
(1.68 (-0.02)) (0.7133) ; # resist exposure parameters
conenhmat (0.400 1)
(0.4358 0.00 1.68)
(12.000 0.0001 0.0640 0) ; # CEM parameters
layers (4.73 -0.136)
(1.47 0.0 0.0741) ; # other layers present
vertrespts 300 ; # number of layers in PR and CEL
#
#Exposure
dose 350 ;
exposerun ; # run exposure machine
#
#Development
optdevelop 0 1 0 ; # develop profile plot
devrate 1 (5.63 7.43 -12.6) ; # resist development parameters
devtime 75 ; # development time
developrun ; # run development machine
# OPTICAL LITHOGRAPHY EXAMPLE
# INORGANIC RESIST
# Input File: samop5
proj 0.28 ; # numerical aperture
lambda 0.436 ; # lambda parameter
parcohdef 0 0.7 0 ; # sigma and defocus
linespace 5.0 5.0 ; # linespace parameters
optimgexp 1 0 1 0 0 ; # profile coordinates for plot
imagerun ; # run image machine
inorganic 1.5 0.15 10.4 1
5.0 0.5 1.3 5 ; # inorganic resist parameters
______________________________________________________________________
# OPTICAL LITHOGRAPHY EXAMPLE
# SINGLE WAVELENGTH PROJECTION WITH SPLAT
# Input File: samop6
#
lambda 0.4358 ; # lambda parameter (optional)
proj 0.28 ; # numerical aperture (optional)
parcohdef 0 0.7 0.0 ; # sigma and defocus (optional)
optimgexp 1 0 1 0 0 ; # profile coordinates for plot
readimage ; # read external file for image profile
resmodel ((0.4358))
(0.551, 0.058, 0.010)
(1.68, ((-0.02))) (0.7133) ; # resist exposure parameters
layers (4.73,-0.14)
(1.47,0.0,0.0741) ; # layer parameters
dose 150 ; # dose for exposure
exposerun ; # run exposure machine
optdevelop 0 1 0 ; # profile coordinates for plot
devrate 1 (5.63, 7.43, -12.6) ; # resist development parameters
devtime 15 75, 5 ; # development times
developrun ; # run development machine
# OPTICAL LITHOGRAPHY EXAMPLE
# GCA 6300 EXPOSURE OF KTI 820 RESIST
# Reference file for comparison with scaling and phase shifting
# Input file: samop7
#
lambda 0.4358 ; # lambda parameter
proj 0.28 ; # numerical aperture
phasemask 1 0 1.3 0 0 1.3 1 0 1.3 ; # mask specification
optimgexp 1 0 1 0 0 ; # profile coordinates for plot
vertrespts 240 ;
parcohdef 0 0.7 0 ; # sigma and defocus
imagerun ; # run image machine
resmodel ((0.4358))
(0.51, 0.031, 0.013)
(1.68, ((-0.02))) (1.1900) ; # resist exposure parameters
layers (4.73,-0.14) ;
dose 99 ; # dose for exposure
exposerun ; # run exposure machine
optdevelop 0 1 0 ; # profile coordinates for plot
devrate 2 (.1143,.001683, 4.667)
(.10 .45 .3) ; # resist development parameters
devtime 15, 60, 4 ; # development times
developrun ; # run development machine
______________________________________________________________________
# OPTICAL LITHOGRAPHY EXAMPLE
# GCA 6300 EXPOSURE OF KTI 820 RESIST WITH SCALING
# Reference file for comparison with scaling and phase shifting
# Input file: samop8
#
lambda 0.4358 ; # lambda parameter
proj 0.28 ; # numerical aperture
phasemask 1 0 0.81 0 0 0.81 1 0 0.81 ; # mask parameters
optimgexp 1 0 1 0 0 ; # profile coordinates for plot
vertrespts 240 ;
parcohdef 0 0.7 ; # sigma and defocus
imagerun ; # run image machine
resmodel ((0.4358))
(0.51, 0.031, 0.013)
(1.68, ((-0.02))) (1.1900) ; # resist exposure parameters
layers (4.73,-0.14) ;
dose 99 ; # dose for exposure
exposerun ; # run exposure machine
optdevelop 0 1 0 ; # profile coordinates for plot
devrate 2 (.1143,.001683, 4.667)
(.10 .45 .3) ; # resist development parameters
devtime 15, 60, 4 ; # development times
developrun ; # run development machine
# OPTICAL LITHOGRAPHY EXAMPLE
# GCA 6300 EXPOSURE OF KTI 820 RESIST WITH SCALING AND PHASE SHIFTING MASK:
# LEVINSON TYPE
# Input file: samop9
#
lambda 0.4358 ; # lambda parameter
proj 0.28 ; # numerical aperture
phasemask 1 0 0.81 0 0 0.81 1 180 0.81 ; # mask parameters
optimgexp 1 0 1 0 0 ; # profile coordinates for plot
vertrespts 240 ;
parcohdef 0 0.7 0 ; # sigma and defocus
imagerun ; # run image machine
resmodel ((0.4358))
(0.51, 0.031, 0.013)
(1.68, ((-0.02))) (1.1900) ; # resist exposure parameters
layers (4.73,-0.14) ;
dose 99 ; # dose for exposure
exposerun ; # run exposure machine
optdevelop 0 1 0 ; # profile coordinates for plot
devrate 2 (.1143,.001683, 4.667)
(.10 .45 .3) ; # resist development parameters
devtime 15, 60, 4 ; # development times
developrun ; # run development machine
______________________________________________________________________
# OPTICAL LITHOGRAPHY EXAMPLE
# SINGLE WAVELENGTH PROJECTION LITHOGRAPHY ON SHIPLEY SNR 248 RESIST
# Input File: samop10
lambda 0.248 ; # exposure wavelength
proj 0.42 ; # numerical aperture
linespace 0.4 0.4 ; # mask definition
parcohdef 0 0.5 0.0 ; # sigma and defocus
vertrespts 200 ; # number of vertical grid divisions
horwindow 0.8 0.2 ; # specify output window
imagerun ; # run image machine
resmodel (0.248)
(-0.712 1.157 0.00229)
(1.79, ((-0.02))) (1.00) ; # resist exposure parameters
dose 25.2 ; # exposure dose
shipleyahr 140 60 ; # resist bake parameters
layers (1.70,-3.38) ; # silicon substrate
exposerun ; # run exposure machine
devrate 4 (6.5 .0350 6.3) ; # resist development parameters
devtime 30,120,4 ; # development time
developrun ; # run development machine
[]
Default Parameters - Optical Lithography
[A] Aerial Image
[1] System Configuration
Projection printing
[2] Sytem Configuration Parameters
Projection printing
APERTURE = CIRCULAR
NUMERICAL APERTURE = 0.28
DEFOCUS = 1.5 um
COHERENCE = partial coherence
SIGMA = .7
Contact printing
C1 = 0.25
C2 = 2.00
System independent parameters
LAMBDA = 0.4358 um
Mask type = LINESPACE
LINE = 1.25 um
SPACE = 1.25 um
[3] Image flags
All flags set to 0 (IMGFL(1:5)=0)
[B] Photoresist Exposure (Photolithography)
[1] Exposure dose
DOSE = 150 mJ/cm**2
[2] Resist parameters
Resist thickness = 0.71336 um
Resist A,B,and C at 0.4358 um
A = 0.551 1/um
B = 0.058 1/um
C = 0.0100 cm**2/mJ
Resist index of refraction (initially) at 0.4358 um
n + ik = 1.68 + i(-0.021)
[3] Wafer parameters
A. Layers = oxide layer
1. Oxide layer Thickness, Refractive index at 0.4358 um
Thickness = 0.0741 um
n + ik = 1.47 + i(0.0)
2. Substrate index of refraction at 0.4358 um
n + ik = 4.73 + i(-0.136)
[4] Exposure flags
All flags set to 0 (IEXPFL(1:5)=0)
[C] Photolithography Development
[1] Default rate model is the E1, E2, E3 model.
[2] Equations and default parameter values for the development
rate models:
A. The E1, E2, E3 model:
RATE(M) = exp(E1 + E2*M +E3*M*M) / 10000 um/sec
E1 = 5.63
E2 = 7.43
E3 = -12.60
B. The R model:
the R model can have up to 10 parameters (R7,R8, R9,
R10), but the default includes only up to R6.
RATE(M,z) = f(M,z)*Rb(M)
Rb(M) : bulk rate
f(M,z) : rate-retardation factor near surface
Rb(M) = 1.0/((1.0-M*exp(-R3*(1.0-M)))/R1 +
M*exp(-R3*(1.0-M))/R2) um/sec
R1 = 0.23 um/sec
R2 = 0.0016 um/sec
R3 = 5.6
f(M,z) = 1-(1-(R5-(R5-R6)*M))*exp(-z/R4)
R4 = 0.25 um
R5 = 0.62
R6 = 0.08
C. The Mack model:
This model is based on a kinetic model of the development
process involving the diffusion of the developer to the
resist surface, and the reaction of the developer with the
resist.
Rate = Rmax(A+1)(1-M)**N/(A+(1-M)**N) + Rmin
Rmax = Development rate of fully exposed resist.
Rmin = Development rate of unexposed resist.
A = Constant based on threshold PAC concentration.
N = Number of exposure converted PAC molecules which
react with the developer to dissolve a resist
resin molecule.
Rmax = 0.0375um/sec
Rmin = 0.0010um/sec
A = 0.005
N = 5.6
D. Shipley SNR 248 model:
Rate = R0(1 - CE/C0)**ALPHA
Alpha = 6.5
R0 = 0.035um/sec
C0 = 6.3
[3] Development times for profile output
TIME START = 15.0 sec
TIME END = 75.0 sec
NUMBER OF OUTPUTS = 5
[4] Development flags
Development machine: IPUNCH = 1.
All other flags set to 0.
[]
ELECTRON BEAM LITHOGRAPHY KEYWORD/TRIAL STATEMENTS
______________________________________________________________________
EBLITH # default parameters EBLITH (TRIAL 101) initializes the
default parameters and must be run first for correct initializa-
tion (EBLITH is now optional).
EBLPRINT iwflg(1) . . . . iwflg(5) # output printing flags EBL-
PRINT (TRIAL 102) sets flags which control the outputting of the
various arrays used in the E-beam program as well as information
pertaining to the exposure and development conditions. If
IWFLG(1)=1, the one-dimensional arrays EMLT(1499) (which contains
the exposure pattern for a single line) and ELNWGT(1999) (which
contains the exposure pattern needed to compute the absorbed en-
ergy in the window of interest) are output. If IWFLG(2)=1 the fi-
nal two dimensional energy density array, ELIN(82,1002), is
printed out row by row (including boundaries). Note that
ELIN(82,1002) will only be output if an actual development is re-
quested. If IWFLG(3)=1, the one dimensional array ETEM2(999)
(which contains the exposure pattern for a single Gaussian or
rectangular beam) is printed out. If IWFLG(4)=1, the array
EMAT(80,500) (which contains the input Monte Carlo data multi-
plied by the dose and in units of J/cm**3) is output. If
IWFLG(5)=1, information pertaining to the exposure and develop-
ment conditions is printed out.
EBLRATE r1 cm d0 alpha # etch-rate parameters EBLRATE (TRIAL
104) sets the development rate equation constants. The rate
equation used is: R(D) = R1 (CM + {D/D0})**ALPHA where R(D) is
the etch-rate in A/sec, D is the absorbed energy density in
J/cm**3, R1*CM is the background etch-rate, CM is a constant in-
versely proportional to the initial number average molecular
weight, D0 is a reference or knee energy, and ALPHA is the asymp-
totic slope of the etch-rate versus absorbed energy density curve
at high dose. R1 changes the default value of R1. CM changes
the default value of CM. D0 changes the default value of D0 and
alpha changes the default value of ALPHA.
EBLPATSQ fwhm edge # rectangular beam EBLPATSQ (TRIAL
105) sets the full-width half maximum (FWHM) value and EDGE-width
if a rectangular shaped beam is desired. FWHM sets the FWHM (in
micrometers) and EDGE sets the EDGE-width (i.e. the lateral dis-
tance in micrometers between the 10% and 90% points of the rec-
tangular beam). An edge-width of 0.0 is not allowed. Note that
one rectangular beam is considered one exposure line in the pro-
gram.
EBLPATPS itcou sper sigma sptwgt(i) # periodically arrayed gaus-
sian beams EBLPATPS (TRIAL 106) sets the exposure pattern for a
line made up of periodically arrayed, identical (same standard
deviation) Gaussian beams (spots). ITCOU is the number of Gaus-
sian beams in the line. SPER is the distance (negative numbers
are not allowed) in micrometers between the center of the beams.
SIGMA is the standard deviation of the spots. SPTWGT(i) are the
'weights' of each spot. SPTWGT(1) specifies the weight of the
first spot, SPTWGT(2) specifies the weight of the second spot,
and so on. Each spot must have a corresponding weight. The
weights indicate the fraction of the overall exposure dose given
to each Gaussian beam. For example, if there are 10 .1um fwhm
spots, spaced .1 um apart, in a 1 um line, then the weight of
each spot would be .1. This would cause the simulated 1 um line
to receive the specified overall exposure dose. The weights are
very dependent on how the actual machine being simulated distri-
butes the total dose of electrons. Generally, the correct weight
of a spot will be equal to the fwhm divided by 1 um. This is be-
cause the Monte Carlo data supplied with the program is normal-
ized to 1um pattern widths. Note that at least 2 spots must be
specified to use EBLPATPS (TRIAL 106). There is a maximum of 20
spots per line.
EBLPATNS itcou shfdis(i) stddev(i) sptwgt(i) # non-periodically
arrayed gaussian beams EBLPATNS (TRIAL 107) specifies a line made
up of a non-periodic array of Gaussian beams. Each spot and its
location relative to the first spot (which MUST be set at 0.0 mi-
crometers) must be completely specified. ITCOU is the number of
spots. SHFDIS(1) is the position of the first spot (0.0).
STDDEV(1) is the standard deviation of the first spot. SPTWGT(1)
is the weight of the first spot. Similarly, SHFDIS(2),
STDDEV(2), SPTWGT(2) would describe the second spot, etc. At
present, the maximum a spot may be shifted from the first spot at
0.0 micrometers is 5.0 micrometers-this holds for EBLPATPS (TRIAL
106) as well. Negative distances are not allowed and the maximum
number of spots per line is 20.
**Note that EBLPATSQ (TRIAL 105) or EBLPATPS (TRIAL 106) or
EBLPATNS (TRIAL 107) specifies an exposure line. Two or more of
these trials being used will result in the last trial called be-
ing the one which specifies the line. Also note that the convo-
lution accuracy is limited by the M/C cell size in the horizontal
direction. Accuracy is degraded significantly when the standard
deviation or edge-width is less than one M/C cell size in x.
EBLPLINE lincou shfper wgtlin(i) # periodic line pattern EBLP-
LINE (TRIAL 108) sets the exposure pattern for a series of
periodically arrayed lines. LINCOU is the number of lines (2 or
more). SHFPER is the periodic distance (negative numbers not al-
lowed) between the center of two adjacent rectangular beam lines
or the distance between the centers of the first spots in Gaus-
sian beam lines. WGTLIN(1), WGTLIN(2), etc. are the weights for
each line. There must be one weight for each line. The weights
allow the user to vary the relative overall exposure doses of
each line. The maximum number of lines is 20.
EBLNLINE lincou dislin(i) wgtlin(i) # non-periodic line pattern
EBLNLINE (TRIAL 109) sets the exposure patterns for one or more
non-periodically arrayed lines. Each line and its location rela-
tive to the first line (which MUST be 0.0 micrometers) must be
specified. LINCOU is the number of lines. DISLIN(1) is the po-
sition of the first line (0.0). WGTLIN(1) is the weight of the
first line. Similarly, DISLIN(2) and WGTLIN(2) specify the
second line and so on. There is no limit to the distances
between lines. However, the Monte Carlo data only extends a fin-
ite distance. The program will warn the user when a line can not
possibly contribute any energy density to the window of interest.
Negative distances are not allowed and the maximum number of
lines is 20. Note that this trial can be used to construct pat-
terns of lines with different linewidths. For example, two 1 um
rectangular beams can be arrayed to overlap at the half-maximum
point to form a 2 um line.
EBLWIND cpwind isym shift # window of interest EBLWIND (TRI-
AL 110) sets the convolution and development window size and the
position of the total exposure pattern in the window. CPWIND is
the window size in micrometers. For Monte Carlo data with .02 um
and less lateral cell size, the maximum size of the window is
10um. For cell size greater than .02 um, the maximum window size
is 20um. Note that the larger the window, the larger the CPU
time to run the program. If ISYM=1, the left edge of the window
will start at approximately (within one Monte Carlo cell size)
the center of the exposure pattern (i.e. symmetrical develop-
ment). If ISYM=0, the position of the first spot in the first
line or the position of the center of the first rectangular beam
line in relation to the left window edge must be specified in
SHIFT. If the first spot or rectangular beam is to the right of
the left window edge, SHIFT will be a positive number of microme-
ters. If to the left, SHIFT will be negative.
EBLCNVLV dose # convolution - dose EBLCNVLV
(TRIAL 111) runs the convolution and sets the overall exposure
DOSE. DOSE is the overall exposure DOSE in uC/cm**2. This
overall DOSE is distributed over a line by way of the weights of
each Gaussian as was explained previously. In the case of a rec-
tangular beam, each beam receives the overall DOSE. NOTE: This
statement causes reading of the Monte Carlo absorbed energy dis-
tribution data from the external file `mcdat'.
EBLSTRPTS npts frac # string points - anisotropic development
EBLSTRPTS (TRIAL 112) sets the number of string points and the
anisotropic development option. NPTS is the number of points in
the development string in the window of interest. 30-40
points/micrometer is usually sufficient. Accuracy and CPU time
increase as the number of string points increases. If FRAC is
set less than 1, there will be a reduction in the lateral motion
of the string nodes by a factor of (1-FRAC). If FRAC is set
greater than 1 or less than 0, there will be erroneous results.
EBLNEWDOSE cdose # change dose EBLNEWDOSE
(TRIAL 113) changes the overall dose of the final energy array
without reconvolving the entire exposure again. CDOSE is the new
dose in uC/cm**2. Usually, EBLNEWDOSE (TRIAL 113) would be run
after a development to change the dose for a subsequent develop-
ment.
EBLDEVELOP (no arguments) # E-beam development EBLDEVELOP
(TRIAL 114) runs the E-beam development.
EBLENGPTS itest idep iskip # absorbed energy density contours
EBLENGPTS (TRIAL 115) sets the conditions for the printing out of
various rows (depths) of the final energy array in the window of
interest. If ITEST=1, then the program will determine the max-
imum energy (ymax) printed in the output. If ITEST is any other
positive integer (J/cm**3), that value will be used as the max-
imum energy. This maximum energy is printed out before the actu-
al energy points and is only used for plotting purposes. IDEP is
the first row of the energy array to be printed out (1=top of the
resist, # of rows of Monte Carlo data=bottom). ISKIP is the
'skip' number of rows-i.e. the number of rows added to the number
of the first row to determine which row will be printed out. For
example, for Monte Carlo data of 40 rows, idep=1 and ISKIP=19
would result in rows 1,20,39 being printed out. NOTE: The energy
points data is output to file 'engpts'.
OPTDEVELOP idiag ipunch iaccuracy # Output Options OPTDEVELOP
(TRIAL 2) sets various printing options. If IDIAG=1, extra diag-
nostic printout is produced by the development machine. If
IPUNCH=1, points describing the developed profiles are printed in
an f77punch7 file. If IACCURACY=1, a slower, more accurate algo-
rithm is used which uses more string points and produces more ac-
curate plots (little effect occurs for line printer plots.)
DEVTIME start [ stop [steps] ] # Development Times DEVTIME (TRI-
AL 212) sets the development times from START to STOP seconds in
STEPS and is the same as is used in the optical lithography
machine, as described in the photolithography section. For best
result, use smaller time increment between profiles output.
The E-BEAM Program at Berkeley Presently, the E-BEAM-SAMPLE simu-
lation program runs on a VAX 11/780 compiled with the FORTRAN f77
compiler. Line printer output includes a plot of the developed
contours. Through the use of f77's 'open' and 'close' commands,
points for plotting the final energy profiles EBLENGPTS (TRIAL
115) and the developed resist profiles are printed out into files
'engpts' and 'f77punch7' respectively. Monte Carlo Data At
present, the E-Beam program does not have the capability to gen-
erate the Monte Carlo data needed for the simulation. As this
requires large amounts of computer time, several Monte Carlo
files [I. Adesida, Ph.D. dissertation, University of California,
Berkeley, 1979] are supplied with the main program. These files
are for PMMA resist coats of 1.5 and .5 um on Si at 20 KeV and
1.0 um PMMA on Si at 10, 20, and 30 KeV beam energies. The cell
size is .025 um in x and .025 um in z. The Monte Carlo data for
a particular resist thickness and beam energy combination is read
from file 'mcdat' in subroutine EBCTRL(numb) using 'open' and
'close' statements and has the following form: resist thickness
(um) beam energy (KeV) number to convert Monte Carlo data to
J/cm**3 (normalized
to 1um exposure width) cell size in the x (lateral) direction
in micrometers cell size in the z (vertical) direction in microm-
eters number of rows of data (i2 format, maximum=80) number of
columns of data (i3 format, maximum=500) Monte Carlo data-8e10.4
format per line. One entire row
immediately following another. Miscellaneous For use on small-
er computers, the Monte Carlo (EMAT(80,500)) and final energy
(ELIN(82,1002)) array sizes can be reduced. This is done by
changing the array sizes in the common blocks /CNVLV2/ and
/LINE1/. Also, the checks for the input EMAT(80,500) size and
the window size settings in subroutine EBCTRL(numb) must be
changed. In subroutine EBMSG(numb), message 6 must also be
corrected for the new maximum number of columns in the
EMAT(80,500) array. Different rate equations can be used by
changing the /RATDAT/ common block and the EBRATE (etch-rate) and
BACRAT (background etch-rate) expressions in function EBRATE(cz).
Note that the SAMPLE development routines require the etch-rate
in units of um/sec. []
E-BEAM LITHOGRAPHY EXAMPLES
The following input files are designed to illustrate the use of
the E-beam simulation program in SAMPLE.
# ELECTRON BEAM LITHOGRAPHY EXAMPLE
# ELECTRON BEAM (DEFAULTS)
# Input File: sameb0
eblprint 0 0 0 0 1 ; # print out e-beam information
eblrate 1.0 1.0 199.0 2.0 ; # set rate equation constants
eblpatsq 1.0 0.25 ; # rectangular beam
eblpline 3.0 2.0 1 1 1 ; # periodic line pattern
eblwind 2.0 1.0 ; # window size, symmetric
eblcnvlv 80.0 ; # set dose, run convolution
eblstrpts 50 1.0 ; # string pts, anrate fraction
devtime 40 160 4 ; # development time
ebldevelop ; # run development
______________________________________________________________________
# ELECTRON BEAM LITHOGRAPHY EXAMPLE
# SQUARE BEAMS
# Input File: sameb1
eblith ; # initialize default parameters
eblpatsq 0.75 0.25 ; # specify line
eblpline 3 1.5 1 1 1 ; # specify array of lines
eblwind 4.5 0 0.75 ; # convolution and development window
eblcnvlv 80.0 ; # set dose and run convolution
optdevelop 0 1 1 ; # set printing options
eblengpts 1 1 19 ; # print pts for energy contours
eblstrpts 150 ; # set number of string points
devtime 0 140 8 ; # set development times
ebldevelop ; # develop
______________________________________________________________________
# ELECTRON BEAM LITHOGRAPHY EXAMPLE
# GAUSSIAN BEAMS
# Input File: sameb2
optdevelop 0 1 1 ; # set flags , plot and accuracy.
eblith ; # initialize default parameters
eblpatns 6 (0.0 .106 .25) (.25 .106 .25)
(.5 .106 .25) (.75 .106 .25)
(1.75 .106 .25) (2.0 .106 .25) ; # specify line
eblnline 1 0.0 1 ; # specify array of lines
eblwind 3.0 0 0.5 ; # convolution and development window
eblcnvlv 100.0 ; # set dose and run convolution
eblengpts 1 1 19 ; # print pts for energy contours
eblstrpts 75 ; # set number of string points
devtime 0 120 7 ; # set development times
ebldevelop ; # develop
[]
Default Parameters - E-beam lithography
[1] Set printing flags so that only exposure and
development information is printed
[2] Rate curve data for PMMA 2010; 1:1 MIBK:IPA developer:
R1=1.0
CM=1.0
D0=199
ALPHA=2.0
[3] Exposure pattern:
1.0 um RECTANGULAR BEAM with .25 um EDGE-WIDTH
3 periodic lines, 2.0 um apart (center to center)
DOSE=80 uC/cm**2
[4] Development:
Symmetric with 2.0 um window, 50 string points
40 to 160,4 development times
[5] Energy plotting option:
First row=1
Skip rows=7
Program sets ymax
[]
ION BEAM LITHOGRAPHY KEYWORD/TRIAL STATEMENTS
______________________________________________________________________
IONPRINT ipflgs(1)...ipflgs(8) IONPRINT (TRIAL 301) set the
flags for printing arrays and information. There are a total of 7
flags which control the printing as follows: Print energy deposi-
tion arrays (IPFLGS(1)=1)), Print lateral ion distribution at
resist surface (IPFLGS(2)=1), Print axial energy depositon arrays
(IPFLGS(3)=1), Print distance calculation parameters
(IPFLGS(4)=1), Print mask geometry (IPFLGS(5)=1), Print mask
scattering data (IPFLGS(6)=1), Print resist data (IPFLGS(7) =1)
and Print range data (IPFLGS(8)=1). This statement is optional.
The default case prints all the scattering parameters but not the
arrays used in the calculations.
IONBEAM itype e0 dose(x10**13) bangle IONBEAM (TRIAL 303) inputs
the beam parameters. These are the ion type (ITYPE), the initial
beam energy (e0 in keV), the DOSE (which is multiplied by a fac-
tor of 1e13 after input in 1/cm**2) and the beam angle (BANGLE in
degrees). The beam angle is measured relative to the line perpen-
dicular to the mask/wafer plane. This statement is optional. The
default case is ITYPE=1 (H+, which is all that is implemented so
far), e0=200 keV, DOSE=1.3e13, and BANGLE=0. To keep the default
value simply enter -1 for that value.
IONMASK spce absthk delta supthk xray(1)...xray(9) IONMASK (TRI-
AL 304) sets the geometry of the exposure mask. All units are in
micrometers. This consists of the mask/resist spacing (SPCE), the
absorbing layer thickness (ABSTHK), the tapered edge length (for
tapered absorber runs, DELTA equals the distance it takes the ab-
sorber to go from zero thickness to its maximum thickness.) the
membrane thickness (SUPTHK), and the absorber positions. XRAY(1)
indicates the x position of the first rising edge of the absorber
pattern, XRAY(2) the next falling edge etc. This statement is op-
tional. The defaults are SPCE=25 micrometers, ABSTHK=.85 microme-
ters, DELTA=0, SUPTHK=.85 micrometers and XRAY is set for period-
ic 1.0 micrometer lines and spaces. To keep the default value
simply enter -1 for that value. Note that if the first absorber
rising edge is specified at 0, the program assumes the absorber
extends to negative infinity. Also the absorbers can not overlap.
IONSCAT abstyp dele psihlf dosthr cntrst psibak delew IONSCAT
(TRIAL 305) sets mask scattering parameters. These are the ab-
sorber type (ABSTYP=74 for tungsten or gold, 14 for amorphous
silicon absorbers and 15 for channeling silicon absorbers), the
energy loss in the support membrane (DELE,keV), the half angle of
the angular distribution of the ions exiting the support membrane
(PSIHLF,degrees), the ion dose that makes it through the support
layer to expose the resist (DOSTHR, 1e13/cm**2), the log of the
ratio of the exposing dose to the dose leaking through the ab-
sorber regions, ie. the mask contrast (CNTRST), the half angle of
the background angular ion distribution exiting through the ab-
sorber regions (PSIBAK,degrees) and the energy loss in the ab-
sorbers (DELEW,keV). Note that PSIBAK includes the effect of the
beam spreading in the support membrane (PSIHLF) since the ions
pass through the membrane first. This statement is optional. The
default values correspond to the beam parameters and mask
geometry specified above in ionbeam and ionmask. To use a default
value simply enter -1 for that value. If you want the program to
calculate the value enter -10 for that value.
IONRESWIN resthk reswin shift sgres1 sgres2 IONRESWIN (TRIAL 306)
sets resist geometry and scattering parameters. These are the
resist thickness (RESTHK,micrometers), the resist window (RESWIN,
micrometers), the distance from zero the resist window is shifted
(SHIFT,micrometers) and the sigma of the lateral spreading of the
ions in the resist in the exposed regions (SGRES1,micrometers)
and the unexposed regions (SGRES2,micrometers). This statement is
optional. The default assumes RESTHK=0.5 micrometers, RESWIN=5.0
micrometers, SHIFT=0, SGRES1=0.011 micrometers and SGRES2=0.011
micrometers. To use a default value enter -1 for that value.
IONEDEP axepts axbpts IONEDEP (TRIAL 308) determines the axial
energy distribution deposited in the resist. The variable AXEPTS
indicates that a file called axedat (set up by the user) will be
input and that the number of data points in it is AXEPTS. Simi-
larly for AXBPTS and axbdat. These data files then should con-
tain the energy deposited in the resist for the exposure regions
(axedat) and the background or absorber regions (axbdat). The un-
its are eV/angstrom. If you want the program to calculate this
data, insert -10 for these values. The statement is optional and
the default case will use data appropriate for the default beam,
mask and resist parameters (AXEPTS=30, AXBPTS=30).
IONEXPOSE horpts que IONEXPOSE (TRIAL 309) exposes the resist(ie.
it forms the energy deposition matrix.) The number of horizontal
points used in the energy calculations is HORPTS. The variable
QUE specifies the number of steps that are used in the tapered
absorber calculations. The default values are HORPTS=100 and
QUE=10. This statement is required for the program to run any ex-
posure (The arrays for the energy deposition are initialized to
zero). Use -1 to indicate default values desired.
IONFRAC frac IONFRAC (TRIAL 310) sets the anisotropic rate frac-
tion. This is a parameter that was found necessary in the e-beam
machine to insure that the developing rates in the simulation
matched those in experiment. The horizontal developing rate is
multiplied by FRAC so that FRAC<1 would give enhanced anisotropic
developing. The default value is 1.0 and the statement is op-
tional.
IONRESIST r1 cm d0 alph IONRESIST (TRIAL 311) sets the develop-
ment rate equation constants for the resist. The default con-
stants are those for PMMA, R1=1.0, CM=1.0, D0=174 and ALPHA=1.9.
To indicate default values are desired insert -1 for that value.
This statement is optional.
For the damage etching option the format for the ionresist key-
word input is: IONRESIST 99999 R1 E0 R2 The 99999 parameter in
the input is a flag that invokes the damage etching model. The
default values are R1=0.0008 (micrometers/sec), E0=1.0E07, and
R2=0.0024. Note: E0 is multiplied by 1.0E07 automatically in the
program in order to simplify the input. Use -1 to indicate de-
fault values. This statement is optional.
IONDEVLP IONDEVLP (TRIAL 312) develops the resist for the ion
beam machine.
IONECNTR engmax idep iskip ityplt IONECNTR (TRIAL 313) outputs
the energy contour data into a file called engpts. The vertical
scale of the plot data can be set by ENGMAX. If it is desired to
have the program set the plotting scale, set ENGMAX=1.0. To set
the scale set ENGMAX= 'number' (J/cm**3). The rows of the energy
depositon array are output starting at row IDEP and every ISKIP
rows after that (IDEP=1 is the top of the resist). The type of
plot is determined by ITYPLT (ITYPLT=1 to 6). If ITYPLT=1, the
contribution from each beam component is plotted separately.
These components are the channeled beam, the background beam
leaking through the absorbers, the beam that is transmitted
through the tapered edges of an absorber and the dechannelled
beam. If ITYPLT=2, all these components are added together before
plotting. If just one component is desired then ITYPLT=3 (chan-
nelled beam), ITYPLT=4 (background beam), ITYPLT=5 (tapered edge
beam) and ITYPLT=6 (dechannelled beam).
IONDEVTIME devsrt devend devinc npts IONDEVTIME (TRIAL 314)
specifies the development times of the resist. Resist contours
are plotted every DEVINC seconds starting DEVSRT seconds into the
development and stopping after DEVEND seconds of development.
The number of points in the development string is NPTS. This
statement is required to achieve development of the resist. The
default values give contours every 20 seconds starting at 10
seconds and stopping at 90 seconds. To indicate default values
use -1 for each value. For best result, use smaller time incre-
ment between profiles output.
Additional Notes on the ION BEAM machine. The ion beam lithogra-
phy machine is normally operated with an internal energy deposi-
tion model by using "ionedep -10 -10". This default assumes hy-
drogen ions with vertical trajectories and use a polynomial fit
to emperical data of H. H. Anderson and J. F. Ziegler[1] [1]
H. H. Anderson and J. F. Ziegler
"Hydrogen Stopping Power and Range
in all elements." vol 3,
Pergamon Press 1977 to calculate energy deposition. As
an option, more accurate Monte Carlo scattering energy deposition
data can be input from an external file. This requires running
an external program such as TRIM[2] [2] J. F. Ziegler, J. P.
Biersock and
U. Littermark, "The Stopping and Range of
Ions in Solids", Pergamon Press, 1985 to find the energy
deposition due to a delta function beam. The output must then be
adapted to the uniform rectangular grid and file format used by
SAMPLE. The convention for the ion beam Monte Carlo data file is
identical to the electron beam MCDAT file. If the user wants to
specify their own data for the axial energy deposition in the
resist, this is accomplished using the keyword IONEDEP (trial
307). The user has to create a file `axedat` containing the ener-
gy deposition in eV/angstrom. The energy deposition underneath
the absorber regions is put in a file called 'axbdat'. Then the
two arguments following the keyword ionedep specify the number of
points in axedat and axbdat (IONEDEP AXEPTS AXBPTS). []
ION BEAM LITHOGRAPHY EXAMPLES
The following input files are designed to illustrate the use of
the Ion beam simulation program in SAMPLE.
# ION BEAM LITHOGRAPHY EXAMPLE
# ION BEAM (DEFAULTS)
# Input File: samio0
ionprint 0 0 0 1 1 1 1 ; # set printing flags
ionbeam 1 200 1.3 0 ; # input beam parameters
ionreswin .5 5.0 0 .011 .011 ; # set resist geometry
ionmask 25 .85 0 .85 0 1 2 3 4 ; # set mask geometry
ionscat 74 -10 -10 -10 -10 -10 -10 ; # calculate mask scattering
ionexpose 100 10 ; # expose the resist
iondevtime 10 90 20 -1 ; # set development times
iondevlp ; # develop the resist
______________________________________________________________________
# ION BEAM LITHOGRAPHY EXAMPLE
# BASIC MIBL
# Input File: samio1
ionprint 0 0 0 1 1 1 1 1 ; # set printing flags
ionbeam -1 190 2. 0 ; # input beam parameters
ionmask 25 0.75 0 0.75 0 0.5 1. 1.5 2.; # set mask topography
ionscat 74 -10 -10 -10 -10 -10 -10 ; # calculate mask scattering
ionreswin 1 2.5 0 .01 .01 ; # set resist geometry
ionedep -10 -10 ; # calc. deposition in resist
ionexpose 200 -1 ; # expose the resist
iondevtime 15 60 15 200 ; # set development times
iondevlp ; # develop the resist
ionecntr 1 1 27 1 ; # output the energy contours
______________________________________________________________________
# ION BEAM LITHOGRAPHY EXAMPLE
# TAPERED ABSORBER ION MASK
# Input File: samio2
ionbeam 1 250 2.5 0 ; # set beam parameters
ionmask 25 1.1 1 1.25 1. ; # set tapered mask geometry
ionscat 74 -10 -10 -10 -10 -10 -10 ; # calculate mask scattering
ionreswin 1 2. 0 .01 .01 ; # set resist parameters
ionedep -10 -10 ; # calculate energy deposition
ionexpose -1 10 ; # expose resist
iondevtime 60 300 60 100 ; # set development times
iondevlp ; # develop the resist
ionecntr 1 1 27 1 ; # output energy contours
[]
Default Parameters - Ion-beam lithography
[1] Set printing flags so that scattering data and
development information is printed
[2] Rate curve data for PMMA 2010; 1:1 MIBK:IPA developer:
R1 = 1.0
CM = 1.0
D0 = 174
ALPHA = 1.9
[3] Beam Parameters:
Energy = 200 keV
Dose = 1.3e13
Beam Angle = 0 degrees
[4] Mask Geometry:
Membrane thickness = 0.85 micrometers
Absorber thickness = 0.85 micrometers
Linewidths = 1.0 micrometers
[5] Development:
Start time = 10 seconds
End time = 90 seconds
Increment = 20 seconds
Number points = 100
[6] Energy plotting option:
First row = 1
Skip rows = 9
Type of plot = 1
Program sets ymax
[]
X-RAY LITHOGRAPHY KEYWORD/TRIAL STATEMENTS
______________________________________________________________________
XRAYINIT # initialization XRAYINIT (TRIAL 321)
initializes the default parameters. Note that the default values
for flux, window and development time parameters are different
from those in the system initiatization. They are tailored for
the X-ray machine.
XRAYPRINT ioflag # set the output printing flag XRAY-
PRINT (TRIAL 322) sets the flag to control the outputting of the
information pertaining to the exposure and development condi-
tions. If IOFLAG = 1, the data for the mask, resist, the rate
parameters and the flux is outputted.
XRAYMASK locmsk [thkmsk [theta [mu]]] # mask parameters XRAYMASK
(TRIAL 323) specifies the size and shape of the mask and its ab-
sorption constant. The mask is either a tapered or a non-tapered
line edge. The X-ray machine assumes a mask with the edge on its
right side and that the mask extends infinitely to its left.
LOCMSK specifies the x-coordinate of the line edge of the mask in
a user-defined coordinate system. THKMSK specifies the thickness
of the mask. Both LOCMSK and THKMSK are in um. THETA specifies
the acute angle in degrees of a tapered mask. THETA = 90.0 indi-
cates a non-tapered mask. MU specifies the absorption constant in
1/um.
XRATETOP thktlr [mut [r1t [cmt [d0t [alphat]]]]] # top resist
parameter XRATETOP (TRIAL 324) sets the thickness and the
development rate constants of the top resist. THKTLR specifies
the thickness in um. The rate equation used is:
R(D) = R1T(CMt + {MUT*FLUXT}/{10*D0T})**ALPHAT where R(D) is
the etch-rate in A/sec, R1T is the background etch-rate, CMT is a
constant inversely proportional to the initial number average
molecular rate, MUT is the absorption constant in um-1, FLUXT is
the local flux in mJ/cm**2, D0T is the reference energy in
J/cm**3, and ALPHAT is the asymptotic slope of the etch-rate
versus absorbed density curve at a high dose. R1T changes the de-
fault value of R1T. CMT changes the default value of CMT. D0T
changes the default value of D0T and ALPHAT changes the default
value of ALPHAT.
XRATEBOT thkblr [mub [r1b [cmb [d0b [alphab]]]]] # bottom resist
parameter XRATEBOT (TRIAL 325) sets the thickness and the
development rate constants of the bottom resist. THKBLR specifies
the thickness in um. The rate equation used is:
R(D) = R1B(CMB + {MUB*FLUXB}/{10*D0B})**ALPHAB where R(D) is
the etch-rate in A/sec, R1B is the background etch-rate, CMB is a
constant inversely proportional to the initial number average
molecular rate, MUB is the absorption constant in um-1, FLUXB is
the local flux in mJ/cm**2, D0B is th reference energy in
J/cm**3, and ALPHAB is the asymptotic slope of the etch-rate
versus absorbed density curve at a high dose. R1B changes the de-
fault value of R1B. CMB changes the default value of CMB. D0B
changes the default value of D0B and ALPHAB changes the default
value of ALPHAB.
XRAYGOLD layer [auabso [fractn [range]]] # Au layer parameter
XRAYGOLD (TRIAL 326) set the position of the Au absorption layer,
its absorption constant, its emission constant and its range.
LAYER can take the value of 0,1,2 or 3. 0 means no Au layer. 1
means the layer is on the surface of the resist. 2 means the bot-
tom of the top resist. 3 means the Au layer is at the bottom of
the bottom resist. AUABSO changes the default value of absorption
constant. FRACTN changes the default value of the emission con-
stant. RANGE changes the default range of photoelectrons on ei-
ther side of the Au layer.
XRAYROWCOL ncol [nrow] # row and column of energy density output
XRAYROWCOL (TRIAL 327) sets the number of rows and column used to
adjust the size of the boundaries in the development subroutines.
NCOL also specifies the number of columns in the energy density
outputs. Note that NROW effects the running time of the DLOOP2
subroutine.
XRAYENERGY zfrac(1) [zfrac(2) [.....[zfrac(20)]..] XRAYENERGY
(TRIAL 328) requests the printouts of the energy density at the
depths (a fraction of the total depth of resists) specified by
ZFRAC(i). At the present time, a maximum of 20 depths can be re-
quested.
XRAYWINDOW cpwind [isym [shift]] XRAYWINDOW (TRIAL 329) set the
exposure and development window size and the position of the win-
dow. CPWIND is the window size in um. If ISYM = 1, the line edge
of the mask will be located in the middle of the window (symmetr-
ical development). If ISYM = 0, SHIFT specifies the distance of
the line edge to the right of the left boundary of the window.
XRAYEXPOSE [flux] # flux and exposure XRAYEXPOSE (TRIAL 330)
sets the FLUX in mJ/cm**2 and runs the exposure.
XRAYNPTS npts # number of string point. XRAYNPTS (TRIAL 331)
sets the number of string points. NPTS is the number of starting
string points in the development string in the window of in-
terest. 30-40 points/um is usually sufficient. Accuracy and CPU
time increase as the number of string points increases.
XRDEVELOP # run X-ray development XRDEVELOP (TRIAL 332) runs the
X-ray development.
[]
X-RAY LITHOGRAPHY EXAMPLES
The following input files are designed to illustrate the use of
the X-ray simulation program in SAMPLE.
# X-RAY LITHOGRAPHY EXAMPLE
# X-RAY (DEFAULTS)
# Input File: samxr0
xrayprint 1 ; # print out x-ray information
optdevelop 0 1 1 ; # plot resist profiles
xraymask 0.2 0.3 60.0 4.6021 ; # mask parameters
xratetop 0.2 0.10 6.8 1. 59.0 2.2 ; # top resist
xratebot 0.2 0.40 6.8 1. 59.0 2.2 ; # bottom resist
xraygold 1. 0.0672 .5 0.03 ; # Au parameters
xrayrowcol 50 20 ; # cell size
xraywindow 0.4 0.0 0.3 ; # window
xrayexpose 80.0 ; # dose and exposure
xraynpts 60 ; # number of string points.
devtime 10 60 5 ;
xrdevelop ; # run development.
______________________________________________________________________
# X-RAY LITHOGRAPHY EXAMPLE
# X-RAY WITH Au LAYER ON BOTTOM OF TOP RESIST
# Input File: samxr1
xrayprint 1 ; # print out x-ray information
optdevelop 0 1 1 ; # plot resist parameters
xraymask 0.6 0.3 90.0 4.6021 ; # mask parameters
xratetop 0.55 0.40 6.8 1. 59.0 2.2 ; # top resist
xratebot 0.25 0.40 6.8 1. 59.0 2.2 ; # bottom resist
xraygold 2. 0.0672 .5 0.03 ; # Au parameters
xrayrowcol 50 20 ; # cell size
xraywindow 0.8 0.0 0.6 ; # window
xrayexpose 10.0 ; # dose and exposure
xraynpts 60 ; # number of string points.
devtime 60 480 8 ;
xrdevelop ; # run development.
[]
Default Parameters- X-ray Lithography
[1] Set output printing flag so that only exposure and
development information is printed. No energy density
will be outputted.
[2] Mask Parameters
THKMSK = 0.6 um
LOCMSK = 0.5 um
THETA = 90.0 degrees (non-tapered)
MU = 4.4021 um-1 for Au at wavelength of 8.34 A.
[3] Resist Parameter.
For PMMA 1 in Hatzakis exp.
THKTLR = 0.5 um
THKBLR = 0.5 um
MU = 0.1066 um-1
R1 = 8.67 A/sec
CM = 1.0
D0 = 250 J/cm**3
ALPHA = 1.4
[4] Au Parameters
There is no layer.
ABSORPTION = 0.0672
EMISSION = 0.5
RANGE = 0.3 um
[5] There are 50 col. and 20 rows.
[6] FLUX = 40 mJ/cm**2
[7] Development
System :
Symmetrical with window = 2.0um, 50 string points
TIME START = 15 sec
TIME END = 75 sec
NUMBER OF OUTPUT = 5
TRIAL 321:
Symmetrical with window = 2.0um, 80 string points
TIME START = 30 sec
TIME END = 120 sec
NUMBER OF OUTPUT = 4
[]
DEPOSITION/METALIZATION KEYWORD/TRIAL STATEMENTS
_________________________________________________________________
METSRCPARM mtype ... parameters... dep.rate
METSRCPARM (TRIAL 50) initializes the metal
deposition/metalization machine. The second argument, MTYPE,
specifies the deposition source type. MTYPE = 1 Unidirectional
source MTYPE = 2 Dual source MTYPE = 3 Hemispherical source
MTYPE = 4 Conical source MTYPE = 5 Planetary source
expand; cB s l l. METSRCPARM (TRIAL 50) :
Deposition/Metalization Types Summary
MTYPE arguments and their meaning _
1 [angle [dep.rate]] Unidirectional ANGLE = source angle with
respect to surface normal in degrees DEP.RATE =
deposition rate in um/s (negative number)
2 [angle1 [angle2 [dep.rate]]] Dual source ANGLE1 = positive
source angle (in deg.) ANGLE2 = negative source angle (in
deg.) DEP.RATE = deposition rate in um/s
(negative number)
3 [angle1 [angle2 [dep.rate [A]]]] Hemisphere ANGLE1 = posi-
tive angle plane limit on incoming ma-
terial (in deg.) ANGLE2 = negative angle plane limit
on incoming material (in deg.) DEP.RATE
= deposition rate in um/s (negative number)
flux distribution = cos(A*PHI), for A*PHI <=
90 degrees 0 , for A*PHI > 90 degrees
A = coefficient for cosine distribution = 0 for
uniform distribution PHI = azimuthal angle from the z-
axis
default parameters: ANGLE1 = 90 degrees
ANGLE2 = -90 degrees A = 0 PHI = 90 de-
grees
Caution: for A not 0 or 1, run time will be
longer, since 3D flux distribution integral must
be solved numerically.
4 [gamma [sw [rp [dep.rate]]]] Conical GAMMA = angle between the
central axis and planet axis in degrees SW = cen-
tral axis length RP = planetary axis length
DEP.RATE = deposition rate in um/s
(negative number)
5 [mrsl {rsl or phi} [gamma
[beta [sw [rp [dep.rate]]]] Planetary MRSL = 0 enter
value of RSL MRSL = 1 calculate RSL given PHI
RSL = distance from planet axis to
substrate in inches PHI = angle between the planetary
axis and the ray from the intersection of the
planetary axis and the central axis to the substrate in
degrees GAMMA = angle between the central axis
and planetary axis in degrees BETA = tilt angle of planet
in degrees SW = central axis length RP = plane-
tary axis length DEP.RATE = deposition rate in um/s
(negative number)
* For an illustrated description of these parameters see Sections
IV and VII of Chiakang Sung's report "Simulation and Modelling of
Evaporated Deposition Profiles." See also W. Fichtner, "Process
Simulation" in VLSI Technology, ed. S.M. Sze, 2nd edition, 1988.
_________________________________________________________________
METGRAPHF [iplot] METGRAPHF (TRIAL 51) requests, if IPLOT is 1,
or suppresses, if IPLOT is 0, the "punch" file for the graphic
plot of metal deposition profiles. If IPLOT is not specified, no
action is taken.
METHOTSIGM [dep.sigma] METHOTSIGM (TRIAL 52) triggers the sur-
face migration effect due to deposition on a hot substrate.
DEP.SIGMA is the variance in atomic motion, "Random walk", in mi-
crometers.
METACCUR accuracy [deloop] METACCUR (TRIAL 53) sets the flags
which determine the accuracy of the simulation. ACCURACY (1 un-
changed; 2 doubles; 3 quadruples) is an integer value which
determines the number of points in the string model. DELOOP (1
yes; 0 no; default 0) signals a call to the delooping routine to
remove any spurious loops. These increase computation time, so
only use it if necessary.
METMAXXZ [width [height]] METMAXXZ (TRIAL 54) sets the window
WIDTH and HEIGHT dimensions in micrometers for the metal deposi-
tion plots. Both width and height are set only when the values
are pre-specified.
METINPROF (x(1),z(1)) (x(2),z(2)) . . . (x(249),z(249))
METINPROF (TRIAL 55) defines the initial profile for deposition
if other processing machines have not been run previously. X(i)
are the x-coordinates and Z(i) are the z-coordinates of a se-
quence of turning points which define the initial profile. Since
the plot-window statement does not allow the user to change the
top level, the profile should have its top surface "below" the
z=0 level.
METSAVPROF iounit METSAVPROF (TRIAL 56) stores the current
string profile in a SAMPLE file specified by the logical IOUNIT
of save file. This command is equivalent to ETCHSAVE of the Etch-
ing machine.
METLODPROF iounit METLODPROF (TRIAL 57) loads the string profile
from the file assigned to logical IOUNIT for metal deposition.
This command is equivalent to ETCHLOAD of the Etching machine.
METTIMSTEP start stop [steps] METTIMSTEP (TRIAL 58) is the time
controller for metal deposition where START is the time in
seconds of the first profile, STOP is the time in seconds of the
final profile, and STEPS the number of profiles on this plot. For
a more accurate profile, use smaller time increments between pro-
file outputs. (note: START is currently set to 0.0 seconds for
any input value.)
METRUN METRUN (TRIAL 59) runs the Deposition/Metalization
machine.
[]
DEPOSITION/METALIZATION EXAMPLES
These examples illustrate the use of the Deposition/Metalization
machine.
# DEPOSITION EXAMPLE
# DEPOSITION (DEFAULTS)
# Input File: samdp0
metsrcparm 3 90.0 -90.0 -0.005 0 ; # hemispherical source
metgraphf 1
metmaxxz 2.0 1.0 ; # window dimensions for plot
metinprof (0.0,0.5) (1.0,0.5)
(1.0,1.0) (2.0,1.0) ; # set initial profile
mettimstep 0 60, 3 ; # deposition times
metrun ; # run deposition machine
______________________________________________________________________
# DEPOSITION EXAMPLE
# ALUMINUM DEPOSITION BY PLANETARY EVAPORATION
# Input File: samdp1
metsrcparm 5 0 4.5 56.0 20.0 18.0 7.5 -0.010
; # planetary source
metgraphf 1 ; # request profile in plotfile
metmaxxz 4.0 2.0 ; # window dimensions for plot
metinprof (0.00,1.0) (0.75,1.0)
(0.75,2.0) (3.25,2.0)
(3.25,1.0) (4.00,1.0) ; # set initial profile
mettimstep 0 90, 10 ; # specify time of deposition
metrun ; # run deposition machine
______________________________________________________________________
# DEPOSITION EXAMPLE
# ALUMINUM LIFT-OFF TECHNIQUE
# Input File: samdp2
metsrcparm 5 0 4.5 56.0 20.0 5.0 7.5 -0.001
metgraphf 1 ; # request profile in plotfile
metaccur 2 1 ; # better accuracy and deloop
metmaxxz 4 4 ; # set window dimensions for plot
metinprof (0.00,1.86)(0.83,1.86)(1.00,2.00)
(0.62,2.16)(0.61,2.26)(0.68,3.00)
(0.93,4.00)(3.08,4.00)(3.32,3.00)
(3.39,2.26)(3.38,2.16)(3.00,2.00)
(3.17,1.86)(4.00,1.86) ; # set initial profile
mettimstep 100, 1000 5 ; # deposition times
metrun ; # run deposition machine
# DEPOSITION EXAMPLE
# MULTIPLE DEPOSITION OF OXIDE THEN ALUMINUM
# Input File: samdp3
# Step1:Oxide Deposition by Sputtering
metsrcparm 3 90.0 -90.0 -0.001 ; # hemispherical source (uniform distr.)
metgraphf 1 ; # profile coordinates in plotfile
metaccur 2 0 ; # better accuracy
metmaxxz 4.0 4.0 ; # window dimensions for plot
metinprof (0.0,3.4) (1.5,3.4)
(1.5,3.0) (2.5,3.0)
(2.5,3.4) (4.0,3.4) ; # set initial profile
mettimstep 0 800 1 ; # deposition times
metrun ; # run deposition machine
#
# Step2: Al Deposition by Sputtering
metsrcparm 3 90.0 -90.0 -0.001 1 ; # hemispherical source (cosine distr.)
metgraphf 1 ; # profile coordinates in plotfile
methotsigm 0.2 ; # surface migration
metaccur 2 1 ; # better accuracy
metmaxxz 4.0 4.0 ; # window dimensions for plot
mettimstep 0 1000 5 ; # deposition times
metrun ; # run deposition machine
[]
Default Parameters - Deposition
[1] Default system configuration = Hemispherical source
[2] Default parameters for different system configurations
A. Unidirectional source
Source angle = 45.0 degrees
B. Dual directional source
Source angles = 45.0 -45.0 degrees
C. Hemispherical source
Source angle limits = 90.0 -90.0 degrees
Coefficient A for cosine distr. = 0.0
D. Conical source
GAMMA = 30 degrees
SW = 25.0 inches
RP = 25.0 inches
E. Planetary source
MRSL = 0
RSL = 4.5 inches
PHI = 15.0 degrees
GAMMA = 30.0 degrees
BETA = 30.0 degrees
SW = 25.0 inches
RP = 25.0 inches
[3] Deposition Rate - DEP.RATE = -0.005 um/sec
[4] Surface migration (If requested with no argument)
DEP.SIGMA = 0.181 um
[5] Window plot size
WIDTH = 2.0 um
HEIGHT = 1.0 um
[6] Initial Profile
Turning points = 4
(0.0,0.5) (1.0,0.5) (1.0,1.0) (2.0,1.0)
[7] Profile Deposition Times
TIME START = 0.0 sec
TIME END = 60.0 sec
NUMBER OF OUTPUTS = 3
[8] Profile data plot file
IPLOT = 0
[]
ETCHING KEYWORD/TRIAL STATEMENTS
_________________________________________________________________
ETCHRATES jtype rates [rates ...] ETCHRATES (TRIAL 78) specifies
the type of etching desired and the applicable rate information
of the layers starting from the top down. JTYPE = 1-6 Isotro-
pic etching JTYPE = 7-14 Reactive ion etching JTYPE = 15-20
Planarization JTYPE = 21-25 Ion milling and sputtering
For more complicated types of etching additional statements are
necessary to specify the missing information. For example,
ETCHRATES 7, should be accompanied by the KINETICS statement in
order to completely characterize the surface kinetic effects.
Similarly, ETCHRATES 15-25 require IONMILL and ETCHSOURCE to
specify the ion milling parameters.
The RATES are specified in micrometers/second; singly for each
layer for isotropic etching/deposition and in pairs (isotropic,
directional) for each layer for anisotropic etching. expand; cB
s l l.
ETCHRATES (TRIAL 78) : Etching types
JTYPE Comment _ 1 [mask [layer(n) layer(n-1) ... layer(1)]
substrate] Isotropic etch
2 [deposition rate] Isotropic deposition isotropic etch with
negative rate.
3 [descum rate] Plasma descum isotropic descum for top layer.
4 [mask [layer(n) layer(n-1) ... layer(1)] substrate]
Special additive isotropic rates.
5 [mask [layer(n) layer(n-1) ... layer(1)] substrate]
Special use with ASIMPLANT As-implanted surface.
6 [mask [layer(n) layer(n-1) ... layer(1)] substrate]
Special use with ASIMPLANT As-implanted buried
layer
7 [mask [layer(n) layer(n-1) ... layer(1)] substrate] Plasma as-
sisted etching use with KINETICS
w/ surface kinetics directional & isotropic along a
surface.
8 [mask [layer(n) layer(n-1) ... layer(1)] substrate] Plasma as-
sisted etching use with KINETICS
w/ surface kinetics directional & isotropic along an
underside.
9 non-uniform 2d layer Obsolete: Use NONPLANAR
10 [mask [layer(n) layer(n-1) ... layer(1)] substrate] Plasma-
assisted etching directional & isotropic
11 [deposition rate] Cosine deposition single source
directional deposition (negative rate)
12 same as 10 13 same as 10 14 same as 10
15 [depostion rate] Planarization isotropic deposition and
sputtering specified by A,B, & C.
16 [deposition rate] Planarization isotropic deposition and
sputtering specified by max & angle.
17 [deposition rate] Planarization isotropic deposition and
sputtering specified by table.
18 [deposition rate] Planarization cosine deposition and
sputtering specified by A,B, & C.
19 [deposition rate] Planarization cosine deposition and
sputtering specified by max & angle.
20 [deposition rate] Planarization cosine deposition and
sputtering specified by table.
21 ion milling specified by sputtering analytics and
A,B,C.
22 ion milling specified by maximum sputtering angle and
ratio to normal. 23 ion milling specified by table of
etch-rates
24 not implemented 25 not implemented _
ETCHLAYERS ilayer thickness ETCHLAYERS (TRIAL 79) tells the simu-
lation the layer thicknesses in micrometers. Note the ILAYER=0
is the substrate up through the largest ILAYER which is the mask.
The sum of the layer thicknesses is the vertical window dimension
of the output graph.
ETCHNUMLAY nmlyrs ETCHNUMLAY (TRIAL 80) specifies the total
number of layers on the wafer including photoresist and sub-
strate.
IONMILL ilayer S0(ilayer) A(ilayer) B(ilayer) C(ilayer)
density(ilayer)
--or--
IONMILL ilayer S0(ilayer) thetamax(ilayer) max:norm
density(ilayer)
--or--
IONMILL ilayer inc R0 Rinc ... R90 IONMILL (TRIAL 81) initial-
izes material information about ion milling in a choice of 3
ways. The first specifies the coefficients of an analytic func-
tion describing the sputtering yield versus angle, as Rate =
(phi/dens)S0(Acos+Bcos**2+Ccos**4). The second estimates these
coefficients from an angle of maximum etching and the ratio of
the maximum rate to that of normal incidence. The third method
allows input of a table of values for incremental angles spaced
at INC between 0 and 90 degrees for each layer. S0 is the
sputtering yield at normal incidence in atoms/second; density,
the atomic density in 10e22 atoms/cm**3; and R, a rate at the in-
cremental angles with units of micrometers/second.
ETCHSOURCE theta phi ETCHSOURCE (TRIAL 82) allows specification
of a source angle, THETA, in degrees of the incident radiation
when directional etching is used. A THETA value of zero indicates
direct/normal incidence. PHI is the ion flux used in modelling
ion milling given in milliAmps/cm**2.
ASIMPLANT q dose [blthick] ASIMPLANT (TRIAL 83) is a special
etching feature specifying that there is an Arsenic implanted
layer of Q (10e14/cm**2) energy DOSE (KeV) and optionally a
buried layer of thickness, BLTHICK. If no buried layer is speci-
fied, it is assumed that the surface is implanted.
ETCHACCUR accuracy nchecker diagnostics ETCHACCUR (TRIAL 84)
sets the ACCURACY NCHECKER and DIAGNOSTICS flags. ACCURACY is an
integer controlling the amount of points in the string model. It
varies from 0 to 10, 10 being the most points. 4 is the default
and is sufficient for most everything but ion milling. NCHECKER
(0,1 -> normal checker, 2 -> second order checker is used).
Specifies the checker to be used. Default is 0, normal checker.
DIAGNOSTICS (0 -> no, 1 -> yes) requests information about the
string points on each advance.
ETCHPROF ptype dimen ETCHPROF (TRIAL 85) initializes a profile
when etching has not been preceded by other machines such as
development, deposition, etc. All coordinate and dimensional
values are expressed in micrometers. PTYPE = 1 initializes a line
of width DIMEN PTYPE = 2 initializes a space of width DIMEN PTYPE
= 3 initializes a falling edge at an angle DIMEN PTYPE = 4 sets a
sloped line of width DIMEN PTYPE = 5 sets a sloped space of width
DIMEN PTYPE = 6 initializes a vertical step (angle DIMEN=90.0 de-
grees) All six types (PTYPE=1-6) of the profiles initialized
above are centered in the etch window.
--or--
ETCHPROF (x,z)1 (x,z)2 (x,z)3 ... (x,z)249 The coordinates
(X,Z)i are the turning points for a piece-wise linear profile.
ETCHWINDOW width ETCHWINDOW (TRIAL 86) specifies the horizontal
window WIDTH (in micrometers) of the output graph.
ETCHPLOT ipunch iplot iprint ikeep ETCHPLOT (TRIAL 87) controls
the output information. IPUNCH=1 requests co-ordinate points
suitable for plotting with the plot routines; 0 is no request.
IPLOT requests (1) or suppresses (0) a line printer plot. IPRINT
controls the line printing of numerical coordinate points;
IPRINT=1 is control on, set to 0 is control off. IKEEP allows
the user to reset the profile to the first profile in mid pro-
cess; IKEEP=0 requests reset, IKEEP=1 is NO reset.
ETCHTIME time1 [ time2, [ nsteps ] ] ETCHTIME (TRIAL 88) sets
the etching times of profile output. TIME1 is the first and
TIME2 the last with NSTEPS in between. The times are specified
in seconds. It is better to have a smaller time increment for a
more accurate profile.
ETCHRUN ETCHRUN (TRIAL 89) runs the etching machine.
ETCHSAVE iounit ETCHSAVE (TRIAL 90) stores the current string
profile in a SAMPLE file specified by the logical IOUNIT of save
file. This command is equivalent to METSAVPROF of the Deposition
machine. ETCHLOAD iounit ETCHLOAD (TRIAL 91) loads the string
profile from the file assigned to logical IOUNIT for etching.
This command is equivalent to METLODPROF of the Deposition
machine.
DEVSAVE iounit DEVSAVE (TRIAL 92) saves the latest profile in
device 'IOUNIT'. (This option may not work correctly March 1,
1989) (call dvsave(iounit)) DEVLOAD iounit DEVLOAD (TRIAL 93)
loads a profile from device 'IOUNIT' to continue processing.
(This option may not work correctly March 1, 1989) (call
dvload(iounit))
KINETICS ilayer sigma-x sigma-z [coeff thickness] KINETICS (TRI-
AL 94) models surface diffusion of etching products in layer
ILAYER, with characteristic lengths (in um) SIGMA-X and SIGMA-Z
in the x and z directions respectively. Optionally COEFF
expresses the amount the etch rate is enhanced at the surface and
THICKNESS the position of enhancement if not at the interface.
ADDEDRATE ilayer rlayer(ilayer) rate(ilayer) ADDEDRATE (TRIAL
95) allows specification of an extra isotropic etching factor for
a layer (indexed ILAYER) of thickness RLAYER and special rate of
RATE (in micrometers/second) within the already defined material
layers.
NONPLANAR ilayer (x,z)1 (x,z)2 (x,z)3 ... (x,z)249 NONPLANAR
(TRIAL 96) indicates a nonplanar underlying profile. The coordi-
nates (X,Z)i are the turning points for the piece-wise linear
profile. Note that ILAYER=0 is the substrate up through the
largest ILAYER which is the mask. The maximum number of layers
allowed with the nonplanar option is 5. With a NONPLANAR state-
ment specified, all underlying layers must be listed as NONPLANAR
(ie. there can be no intermixing of the ETCHLAYERS statement
with the NONPLANAR statement). The top profile is still speci-
fied with the ETCHPROF statement. The NONPLANAR statement must
be preceded by the ETCHNUMLAY statement indicating the number of
layers in the structure. One limitation on the input structure
is that no isolated structures are allowed. Each layer must ex-
tend across the entire simulation window. This problem can be
circumvented by matching profiles with the profile of the layer
below thus having a layer with zero thickness in parts.
[]
ETCHING AND ION-MILLING EXAMPLES
This section contains examples pertenint to the etching machine,
including an ion-milling of GaAs under a titanium mask. Also in-
cluded is a planarization example.
# ETCHING EXAMPLE
# ETCHING - ISOTROPIC (DEFAULTS)
# Input File: samet0
etchrates 1 0.000005 0.0005 0.0002 ; # isotropic etching and rates
etchnumlay 3 ; # layer specification
etchlayers 2 0.71336 ;
etchlayers 1 0.07412 ;
etchaccur 3 ; # accuracy
etchprof 1 1.0 ; # profile (2=) slanted line of 2um
etchwindow 1.25 ; # window of 1.25um
etchplot 1 1 ; # output flags
etchtime 120 480 4 ; # etchtimes
etchrun ; # go!
______________________________________________________________________
# ETCHING EXAMPLE
# ANISOTROPIC ETCHING OF FOUR LAYERS
# Input File: samet1
# Input the rates (isotropic,directional)
etchrates 10 (0.0008333,0.0) # isotropically eroding resist
(0.0,0.0083333) # directionally etched oxide
(0.01167,0.005) # isotropically attacked silicon
(0.0,0.0) ; # rock bottom (non-eroding)
etchnumlay 4 ; # structure with 4 layers
etchlayers 3 1.0 ; # photoresist thickness
etchlayers 2 1.0 ; # oxide thickness
etchlayers 1 1.8 ; # silicon thickness
etchlayers 0 0.2 ; # substrate (rock bottom)
etchaccur 6 ; # accuracy
etchprof (0.0 1.0) (4.0 1.0) (4.2 0.2) (4.5 0.0) (8.0 0.0)
; # piece-wise linear resist profile
etchwindow 8.0 ; # window
etchplot 1 1 ; # output flags
etchtime 60 300, 5 ; # times
etchrun ; # run etch routines
# ETCHING EXAMPLE
# DIRECTIONAL ETCHING WITH LOADING EFFECT
# Input File: samet2
# Input etch rates ( isotropic directional )
etchrates 7 (0.0003 0.00) # mask
(0.0033 0.0065) # layer
(0.0 0.0) ; # substrate
etchnumlay 3 ; # 3 layers
etchlayers 2 1.2 ; # mask is 1.2 um. thick
etchlayers 1 0.7 ; # layer is 0.7 um. thick
etchlayers 0 0.1 ; # show 0.1 um. of substrate
etchaccur 8 ; # specify increased accuracy
etchprof 3 75 ; # a falling edge
etchwindow 4.0 ; # a 4.0 um. window
etchplot 1 1 ; # generate plot and printout
etchtime 36 108 3 ; # set times
kinetics 1 2.0 8.0 1.4 ; # specify surface diffusion
etchrun ; # run machine
______________________________________________________________________
# ETCHING EXAMPLE
# NON-PLANAR ETCHING
# Input File: samet3
# Spin-on and Etchback Planarization
etchrates 1 0.0015 0.0015 0.0001 .0001 ; # equal matching of rates
etchnumlay 4 ; # a 4 layer structure
nonplanar 2 (0.0 .2) (.20 .2) (.25 .22)
(.3 .3) (.35 .4) (.40 .6)
(.85 .6) (.9 .4) (.95 .3)
(1.0 .22) (1.05 .2) (1.25 .2) ; # layer 2
nonplanar 1 (0.0 .7) (.30 .7) (.3 1.05)
(.95 1.05) (.95 .7) (1.25 .7) ; # layer 1
nonplanar 0 (0.0 1.05) (1.25 1.05) ; # Substrate Layer
etchprof (0.0 0.0) (1.25 0.0) ; # initial profile
etchaccur 8 1 ; # specify increased accuracy
etchwindow 1.25 ; # window paramters
etchtime 120 600 10 ; # set times
etchplot 1 1 0 ; # generate plots and
# printouts
etchrun ; # run machine
# ETCHING EXAMPLE
# ION MILLING OF GaAs UNDER TITANIUM MASK
# Input File: samet4
etchrates 21 ; # ion milling by analytic function
etchnumlay 2 ; # initialize layers and thicknesses
etchlayers 1 0.8 ;
etchlayers 0 3.2 ;
etchaccur 10 ; # accuracy
#
# yield A B C density
ionmill 1 595. 10.63 -14.214 4.584 2.1 ; # Ti material parameters
ionmill 0 1460. 6.770 -6.155 0.385 1.90 ; # GaAs material parameters
etchsource 0.0 8.0 ; # source angle and flux (mA)
etchprof 0.0 0.0 2.5 0.0 3.0 0.8 5.0 0.8 5.5 0.0 8.0 0.0 ; # profile
etchwindow 8.0 ; # window
etchplot 1 1 ; # output options
etchtime 180.0 900.0 5 ; # output times
etchrun ; # turn on the beam.
______________________________________________________________________
# ETCHING EXAMPLE
# PLANARIZATION OF SiO2 ANISOTROPICALLY
# Input File: samet5
etchrates 18 0.0049 ; #specify cosine dep.
# and sputtering
etchnumlay 4 ; # 4 layers
etchlayers 3 1.5 ; # mask 1.5 um.
etchlayers 2 1.3 ; # 1st layer
etchlayers 1 1.0 ; # 2nd layer
etchlayers 0 0.03 ; # substrate
ionmill 3 959. 10.7 -11.7 2.0 2.66 ; # set A,B,C
ionmill 2 959. 10.7 -11.7 2.0 2.66 ; # coefficients
ionmill 1 959. 10.7 -11.7 2.0 2.66 ; # for the
ionmill 0 959. 10.7 -11.7 2.0 2.66 ; # sputtering
etchsource 0.0 8.0 ; # source angle and flux
etchaccur 4 2 ; # accuracy and
# 2nd order checker
etchprof 0.0 3.8 0.5 3.8
1.5 2.0 2.5 3.8
3.5 3.8 4.0 2.8 6.0 2.8
6.5 3.8 8.0 3.8 ; # set initial profile
etchwindow 8.0 ; # an 8 um. window
etchplot 1 1 ; # output flags
etchtime 480. 1200. 5 ; # set times
etchrun ; # run
# ETCHING EXAMPLE
# ANISOTROPIC ETCHING OF MULTIPLE LINES AND SPACES
# Input File: samet6
etchnumlay 3 ; # a 3 layer structure
etchlayers 2 5.0 ; # mask
etchlayers 1 2.0 ; # layer 1
etchprof
0.0 4.0
2.0 4.0
2.0 5.0
4.0 5.0
4.0 4.0
6.0 4.0
6.0 5.0
8.0 5.0
8.0 4.0
10.0 4.0
10.0 5.0
12.0 5.0
12.0 4.0
14.0 4.0
14.0 5.0
16.0 5.0
16.0 4.0
18.0 4.0
18.0 5.0
20.0 5.0
20.0 4.0
22.0 4.0
; # initial profile
etchrates 10 (0.001, 0.0) # mask
(0.0, 0.01) # layer 1
(0.0,0.0) ; # substrate
etchplot 1 1 0 ; # generate plot and printout
etchwindow 22 ; # a 56.218 um window
etchaccur 10 2 ; # specify increased accuracy
etchtime 30 90, 3 ; # set times
etchrun ; # run machine
______________________________________________________________________
# ETCHING EXAMPLE
# IONMILLING OF AL WITH MASK EROSION
# Input File: samet7
etchrates 21 0.0 ; #specify cosine dep.
# and sputtering
etchnumlay 2 ; # 2 layers
etchlayers 1 1.5 ; # AZ1350 layer
etchlayers 0 1.5 ; # aluminum layer
ionmill 1 2000 15.08 -19.932 5.85 3.0 ; # set A,B,C coefficient for
ionmill 0 33500 3.41 0.757 -3.171 6.02 ; # the spluttering
etchsource 0.0 8.0 ; # source angle and flux
etchaccur 10 2 ; # accuracy and
# 2nd order checker
etchprof 0.0 0.5 2.0 0.5
2.0 1.5 3.0 1.5
3.0 0.5 5.0 0.5 ; # initial profile
etchwindow 5.0 ; # an 5 um. window
etchplot 1 1 ; # output flags
etchtime 10. 50. 5 ; # set times
etchrun ; # run
[]
DEFAULTS AND TYPICAL VALUES -- Etching and Ion Milling
The consistency of the default values arises from the assumptions
that all parameters indexed by
1 represent RESIST and it's defaults,
2 SPECIAL (polycrystaline silicon),
3 NITRIDE (silicon nitride),
4 OXIDE (silicon dioxide), and
5 SUBSTRATE (<100> silicon). expand; l l l l s c c c c c c
c c c c c c c c c l n n n n.
Deposition Plasma etching defaults _
Variable thick(n) risort(n) rtiso(n) rtnorm(n)
_ Units um um/min um/min um/min _
Material thickness isotropic non-
directional directional
rate rate rate _ 1
RESIST 0.800 0.0060 0.0005 0.0010 _ 2 SPE-
CIAL 0.600 0.3000 0.0300 0.0360 _ 3 NI-
TRIDE 0.300 0.0300 0.0120 0.0430 _ 4 OX-
IDE 0.080 0.0125 0.0060 0.0390 _ 5 SUB-
STRATE 0.2008*9 0.2040 0.0300 0.0360 _8 *9This is not the ac-
tual thickness of the substrate, but the amount that will appear
in the output plot.
expand; c s s s c c c c l r n r. General defaults _
Variable Description Value Units _
indvar(1) type of profile 2 ... indvar(2) card
punch 0 ...
indvar(3) accuracy 2 ... indvar(4) type
of etch 10 ...
indvar(5) diagnostics 0 ...
indvar(6) print coordinates 0 ...
indvar(7) line print profiles 1 ... _
ipvar profile=line 1 ...
dimen linewidth 1.0 micrometers horwin window
size 4.0 micrometers nmlyrs number of
layers 3 ... _ dangle angle of
incidence 0.0 degrees phi ion
flux .32 milliAmp/cm829 _ ehtm1 initial etch
time 120. seconds ehtm2 final etch
time 480. seconds nmehtm number of profiles 4 ...
_
expand; c s s s s s s s c c c c c c c c c c c c c c c c c c c c c
c c c l n n n n n n n. Typical values in ion milling _
Material S9o8 density A B C max max
angle :norm
. 1/sec 10822
9/cm839 ... ... ... degrees ... _
AZ1350 2000. 3.00 15.0806 -
19.9321 5.8515 65 3.00
POLY 4272. 4.98 7.8776 -4.8938 -1.9838 52 2.71
NITRIDE 817. 1.48 7.8776 -4.8938 -1.9838 52 2.71
OXIDE 959. 2.66 10.7000 -
11.7000 2.0000 60 2.55
SILICON 4272. 4.99 3.2696 13.1059 -
15.3755 60 3.95
_ Gold 5310 5.89 1.7660 -0.2589 -0.5072 30 1.05
GaAs 1460 1.54 6.7702 -6.1548 0.3846 55 1.90
Aluminum 33500 6.02 3.4142 0.7574 -
3.1716 45 2.00 _
MULTI-STEP SIMULATION
This example illustrates SAMPLE's ability to perform mutli-
function tasks.
# MULTISTEP PROCESSING EXAMPLE
# IMAGE, EXPOSE, DEVELOP -> DESCUM -> RIE -> ASH -> DEPOSITION.
# Input File: samms1
#
# Photolithography (image, expose, and develop)
lambda 0.436 ;
proj 0.28 ;
linespace 2.0 2 ;
optimgexp 1 0 1 0 0 ; # flags- image lineprint & digital
parcohdef 0 0.7 2 ; # partial coherence and defocus
horwindow 4.0 1.0 ; # horizontal window specification.
layers (4.73 -0.138) (1.47 -0.0 0.5931); # p-glass and SiO2 combined
resmodel (0.436) (0.551 0.058 0.01) (1.68 -0.0 0.91) ;
dose 120 ;
optdevelop 0 1 1 ; # flags- digital profiles, accuracy
devrate 1 (5.63 7.43 -12.6) ;
devtime 20 60 , 3 ;
optrunall ;
#
# Descum
descumspec 0.025 0.05 2 ; # descum amounts in um
#
# Input the etching information
etchrates 10 (0.0000625 0.0)(0.000417 0.000583)(0.000016 0.00065)(0.0 0.0)
; # etch-rate info (iso, dir)
etchnumlay 4 ; # input layers and thicknesses
etchlayers 0 0.2 ; # substrate
etchlayers 1 0.0741 ; # SiO2
etchlayers 2 0.5190 ; # p-glass
etchaccur 6 ; # accuracy
etchtime 60 810, 5 ; # etch times
etchplot 1 1 ; # request digital plot
etchrun ; # run reactive ion etch.
#
# Ash
etchrates 1 0.0055 0.00 0.00 0.0; # isotropically remove top layer.
etchaccur 4 ; # accuracy
etchtime 180 ; # times
etchrun ; # run the etch routines.
#
# Metal deposition
metsrcparm 5 0 4.5 30.0 0.0 18.0 7.5 -0.01875 ; # planetary source.
metgraphf 1 ; # request plot
metaccur 2 ; # set to slightly higher accuracy
mettimstep 0 40, 4 ; # deposition time (0 to 40, 4 steps)
metrun ; # run the metal deposition machine
[]
CHAPTER 3: OVERVIEW
SAMPLE can be extended and modified by the user to meet individu-
al needs. SAMPLE's development has, in fact, been a series of
extensions and modifications over the last 12+ years by many dif-
ferent programmers. It is relatively easy for a user to extend
and customize the program. This chapter is designed to facili-
tate this process. Included here is information for changing
keywords, adding new TRIAL statements, and defining the syntax
and semantics for the parser. There is also a complete list of
the files, functions, and subroutines used in SAMPLE.
CHANGING AND ADDING KEYWORDS
SAMPLE's input is built around words which have specific meaning
to the program. Typically, an input statement consists of a key-
word followed by several parameters. The ability to change and
add keywords makes it convenient to integrate local modifications
into SAMPLE. Care should be taken when choosing keywords. A
well chosen keyword makes the input self-explanatory and simpli-
fies the use of SAMPLE. Obviously, users should also be aware
that adding or changing keywords makes SAMPLE non-portable. Key-
word handling in SAMPLE Starting with version 1.7a, there is only
one keyword list(table) stored in SAMPLE. Each keyword in the
list is associated with an unique action number. At the code
level, there is a (FORTRAN) COMMON block that contains the table.
The list is stored in the (character) array JRSWDT. Here is the
common block: COMMON /LEXSC2/ NMPK2T, MPW2TR(121), JRSWDT(10,121)
CHARACTER*4 JRSWDT For easy portability the characters are stored
one per computer word (that is the CHARACTER*4 declaration for
VAX/Unix/f77 compiler). Each keyword has 10 characters (with
blank padding at the end, if necessary), the table,
JRSWDT(10,121), has 121 of them. The constant NMPK2T contains
the number of keywords in the table (=121). When the program en-
counters an alphabetic character in the input it starts collect-
ing the alphabetic chars in the array KWDARR() till a non-
alphabetic char comes along. Then using the subr LUKUP, the pro-
gram finds out if this input word is present in the list. If the
word is present in the list then its index is returned by subr
LUKUP. This index is stored in the variable KWDVAL (in COMMON
block /LEXSEM/) if the word is found in the table. Once the in-
dex of the word is found, the program uses only the integer index
for making its decisions and does not look at the individual
characters any more. For the keywords in the table there is an
array that specifies the action numbers corresponding to them.
This is the array of INTEGERs MPW2TR(121). For the i-th word
JRSWDT(*,i), MPW2TR(i) is that action number. The table is ini-
tialized in the BLOCK DATA MPKWTR subprogram (in mod00.f) and not
changed during execution. Changing the keywords Altering a key-
word that already exists is just a matter of changing its ini-
tialization in its BLOCK DATA MPKWTR subprogram. Similarly, to
change the action number corresponding to a keyword just change
its initializing DATA statement in its BLOCK DATA: DATA
MPW2TR(index) /new-action-number/ A quick way to delete a keyword
is just to alter it to all blank characters in its initializa-
tion. If storage space is not to be wasted, then just reverse
the steps used in adding new keywords to delete an unwanted key-
word. Shifting all the rest of the keywords up one place in the
list is a very repetitious task if done manually.
Adding NEW keywords If the keyword is to be added in the middle
of the table JRSWDT(10,*) the words following it have to be moved
down one place. There is no need to insert a new keyword in the
middle. To add a new kwd at the end of the table: Change the de-
claration of JRSWDT(10,*) to hold one more keyword i.e. increase
the second dimension size of the array by one for each new key-
word added. This has to be done in every place where that array
is declared (mod00.f, mod03.f, and in some installations in
mod01.f too). Put the new number of keywords in the DATA state-
ment for NMPK2T in BLOCK DATA MPKWTR (in mod00.f). Add the addi-
tional DATA statements in that BLOCK DATA subprogram to initial-
ize the new keyword. (Look at how the other kwds are initialized
there). Compile, load, and go.
Miscellaneous Comments: For our local use at UCB we have made
changing keywords automatic, mainly by using the Unix utility
"make", and two simple special purpose programs for doing the re-
petitious tasks of creating the data statements and inserting the
new COMMON block declarations in the proper places in the code.
A program mapkt1.out takes the list of keywords and their action
numbers from its input and generates the DATA statements and the
COMMON block declarations. These two parts are put in two
separate files using simple Unix editing utilities, and they are
interpolated in the code using a file inclusion program taken
from "Software Tools" by Kernighan and Plauger (Addison-Wesley,
1976, ISBN 0-201-03669-X, pp. 74-77). The SAMPLE program, as it
is released, does not convert the case of letters in the input
and checks for only one case of letters. To be able to use both
cases of the alphabet you will have to modify FUNCTION IPCHTY (in
mod03.f). Unless that is done the program will not be able to
accept mixed-case keywords. However, just translating both cases
to a single case in subr GCARD immediately after the input is
read (and echoed) would allow you to feed mixed case input to the
program. To utilize storage space in memory more efficiently for
the arrays that hold the keyword table, the proper declarations
(CHARACTER*4 ...) for them would have to be changed everywhere in
the code. That would also require corresponding changes in the
declarations in subr LUKUP, and the declaration and handling of
the array KWDARR (in a couple of subrs in mod03.f) to be con-
sistent with the storage of the table. The details depend on the
choice made for the storage of the data-structure for the table
(char*1, or put as many chars per memory word as possible, or use
char*10 and put one keyword per array element and hence one di-
mensional arrays for the table, etc). A person going into that
level of detail with the code ought to be able to figure that out
from the code itself. Unless you are just adding a synonym for
an already existing TRIAL action number (and one or more keywords
associated with it), you probably want to add the code for the
new action number to the program. See "How to Add New TRIAL
Functions".
HOW TO ADD NEW TRIAL FUNCTIONS
The SAMPLE program has a convenient way for allowing the user to
add new routines to it, and to use them through the regular input
structure of the program. Whenever the program finds a keyword,
it calls a certain subroutine, subr extria, and passes the input
parameters to it through a COMMON block. The user can add the
desired computational steps to this subroutine and use the input
parameters passed to it. For keeping the program and the addi-
tions manageable the user should write new computations as new
SUBROUTINEs or FUNCTIONs and call them from subr extria in a
clean fashion. The best way to learn how to add new trial rou-
tines is to look at some existing ones in subroutines extria, ex-
tra2, and the others called from them. The new function is writ-
ten in FORTRAN and given a subroutine name. The necessary param-
eters are passed along as arguments to that subroutine. A simple
"IF" statement is added in the EXTRA2 routine to transfer to your
code. For example the user may put the following code in subr
extria, or extra2:
set ITEST to be the integer value of the first argument
of the mapped keyword
IF (ITEST .NE. 101) GO TO 102
perform the desired computational steps here,
preferably by calling a separately written subr
RETURN 102 CONTINUE
other similar trial-features may follow here. This will be
performed when the program sees the corresponding keyword in the
input. The remaining arguments will be passed into extra2 in the
array STNMLS(n). A better way is to pass them explicitly as sub-
routine arguments.
USING THE KEYWORD STATEMENTS IN SAMPLE
In SAMPLE, the controller (at the highest level) is :-
BEGIN
initialize various things;
REPEAT
get a statement from the input ;
IF ((no previous error) or
(the 'end of input stmts' statement) etc.)
THEN print and 'execute' the statement ;
UNTIL ('end of input stmts')
END. Then for executing each statement, it calls the subroutine
extria. By default this subroutine in SAMPLE does not do any-
thing except keep the program running if the user has not provid-
ed his own branch in it. When the user wants to write an extria
routine, he should know where his input parameters will be found
in the program, and where/how are the variables describing the
various components, machines, process parameters, and other prin-
tout control switches are stored in the data-structure of SAMPLE.
The user should write the new subroutine and incorporate it into
SAMPLE according to the checklist below.
A CHECKLIST FOR ADDING A FEATURE BY THE KEYWORD STATEMENT.
The numbers in the input are available to the extria subroutine
in the common block /parsem/ which is : COMMON /PARSEM/ ISTMTY,
ISTKND, STNMLS(500), NMINST, NMPNTR out of these variables NMINST
tells how many parameters were present in the trial-stmt follow-
ing the keyword. The numbers themselves are to be found in the
STNMLS(500) array in the same sequence as in the input (from
stnmls(1) to stnmls(nminst)). The subroutine extria can use the
above values. This subroutine may have one of the forms : A)
'dedicated' special purpose (not an incremental strategy)
which is written for only one specific kind of use, as
contrasted with: B) 'multipurpose' (and growing) form for use
with various
cases. This is the form currently used in SAMPLE.
e.g. for an input like
KEYWORD num1 num2 ...
the subr itself has a multiway branch like
IF (num1 has valuei)
THEN BEGIN
1) transfer data from stnmls(.) array, if any
2) call the proper routines, if any
3) return
END
Thus with various different values (= valuei) various
different actions can be activated. Put in the appropriate
new common blocks and any other subprograms. Compilation, Load-
ing, and Execution: The new and modified routines should be com-
piled, loaded with the other routines in the program, and execut-
ed. The exact mechanics of this will depend on the local comput-
er system used. During the execution of the program when it en-
counters a keyword statement it will call the subroutine extria
and depending on the input values the code provided by the user
will be invoked. []
BREAK-DOWN OF THE MODULES
The modules for the SAMPLE program are kept in different files
as follows:
mod00.f - blockdata subprogram to initialize constants
mod01.f - top level controller for the program
mod02.f - routine where the trial-statement routines are at-
tached
mod02x1.f - some trial-routines
mod02x2.f - some trial-routines mainly for photolithograpy
mod02x3.f - some trial-routines for etching machine
mod02x4.f - some trial-routines for metal-deposition machine
mod02x5.f - some trial-routines for inorganic resists
mod02x7.f - some trial-routines for E-beam machine
mod02x8.f - some trial-routines for the X-ray machine
mod02x9.f - some trial-routines for the Ion beam machine
mod03.f - lexical analyzer
mod04.f - parser
mod05.f - statement prettyprinter
mod06.f - semantic routines
mod07.f - buffer subrs for keeping the program together
mod08.f - system-dependent (time) routines (not very neces-
sary)
mod10.f - Initializes simulation component and process
parameters
mod11.f - Image machine
mod12.f - Expose machine
mod13.f - Diffusion machine
mod14.f - Develop machine (for photolithography)
mod15.f - Etching machine
mod16.f - Deposition machine
mod17.f - E-beam machine
mod18.f - X-ray machine
mod19.f - Ion beam machine
mod21.f - A collection of generally useful routines for SAM-
PLE.
mod22.f - The math-module. Mathematical/numerical func-
tions.
mod23.f - A collection of geometric routines.
----- The 'library' module mod21 has only a few routines to make
outputting plot-data convenient, and a 'stopping' routine which
does not stop silently.
File Makefile -- to maintain the program (release version) using
the unix 'make' utility. In the interest of reliability the pro-
gram is compiled and loaded with the debugging flag, the array-
index-out-of-bounds flag, and the execution-time-profiling flag
of the compiler (and loader) set. (So, of course, no optimiza-
tion is done by the compiler). []
SUBROUTINE LIST BY MODULES
mod00.f:
block data mpkwtr
mod01.f:
program sample
subroutine runit
subroutine initui
subroutine initio
subroutine outitl(lunout, iwidth)
subroutine runlab
subroutine termin
mod02.f:
subroutine extria(istknd, stnmls, nsize, nminst)
mod02x1.f:
subroutine extra1(iflag)
subroutine trialtrial
subroutine exfin2
subroutine rserfl
subroutine trial6
subroutine trial7
subroutine help
subroutine extra0(iflag)
subroutine shftar(iretcd, arr2,nsize2,nnum2, arr1,nsize1,
z istart,nnum1)
subroutine serrfl
subroutine prfsav(iounit)
subroutine prflod(iounit)
subroutine filnam(fildes,savfil)
function intchr(numchr)
mod02x2.f:
subroutine extri1(iflag)
subroutine extra2(iflag)
subroutine spdfoc(iprint, stnmls,nsize,nminst)
subroutine tral11(iprint)
subroutine tral19
subroutine tral20(incoh,sig,defocu,ityp)
subroutine tral21 (nlam,rlam,aset,riset)
subroutine tral22(wind, eg, n)
subroutine tral23(reset)
subroutine tral24
subroutine tral25
subroutine tral26
subroutine tral30(fl)
subroutine extr31
subroutine extr32
subroutine tral32(iarg2)
subroutine tral35(nlyrpr)
subroutine tral37
subroutine tral60(ds1,ds2,ds3)
subroutine tral62(r1,r2,r3,r4)
subroutine tral71(dumarg)
subroutine tral72(ia2,ia3,ia4,ia5,a6,a7)
subroutine tral73(mag,ang,subreindex)
mod02x3.f:
subroutine extra3(iflag)
subroutine setmat(rn,sn,an,bn,cn,dn,in)
subroutine clcfrt(an,bn,cn,dn)
subroutine stertb(ilyr,rinc,er,nsize,nminc)
subroutine setflx(theta,phe,nminst)
subroutine setlay(sn,sth)
subroutine sthwnd(hwind)
subroutine setrie(a1,a2,a3,a4,a5,a6,a7,a8,a9,a10,a11,a12)
subroutine setdes(r1)
subroutine setiso(a1,a2,a3,a4,a5,a6)
subroutine setion(a1,a2,a3,a4,a5,a6)
subroutine setcrd(np,pr,nsize)
subroutine settim(t1,t2,n3)
subroutine aimplt(dose,ene,iwhere,bury)
subroutine setund(np,pr,nsize)
subroutine setenh(ilyr,thck,erate)
subroutine setsrf(ilyr,xsig,zsig,rmu,coeff)
subroutine ehload(iounit)
subroutine dvload(iounit)
subroutine dvsave(ncount,iounit)
subroutine sveprf(iounit)
mod02x4.f:
subroutine extra4(iflag)
subroutine trl50(noeror)
subroutine grotbl
function sumx(a)
function sumz(a)
subroutine trl51(noeror)
subroutine trl52(noeror)
subroutine trl53(noeror)
subroutine setdlt(iacc)
subroutine trl54(noeror)
subroutine trl55(noeror)
subroutine metpfl(np)
subroutine trl56(noeror)
subroutine trl57(noeror)
subroutine trl58(noeror)
subroutine trl59(noeror)
subroutine metpro
subroutine mtload(iounit)
subroutine mtsave(ncount,iounit)
mod02x5.f:
subroutine tral46
subroutine cranic (ts,te)
subroutine outprf(number)
mod02x7.f:
subroutine extra6(iflag)
subroutine trl101
subroutine trl102
subroutine trl104
subroutine trl105(numb)
subroutine trl108(numb)
subroutine trl110
subroutine trl111
subroutine trl112
subroutine trl114
subroutine trl115
subroutine trl113
mod02x8.f:
subroutine extra7(iflag)
subroutine tstneg
subroutine trl321
subroutine trl322
subroutine trl323
subroutine trl324
subroutine trl325
subroutine trl326
subroutine trl327
subroutine trl328
subroutine trl329
subroutine trl330
subroutine trl331
subroutine trl332
mod02x9.f:
subroutine extra9 (iflg)
subroutine trl301
subroutine trl303
subroutine trl304
subroutine trl305
subroutine trl306
subroutine trl308
subroutine trl309
subroutine trl310
subroutine trl311
subroutine trl313
subroutine trl314
subroutine edepax
subroutine estrat
subroutine mskatr
function rerf(x)
subroutine abscal(tee)
function g1tau(x)
function g2tau(x)
subroutine sigcal
subroutine ecalc(isub,ichn,iabs)
function scalc2(e,z2)
subroutine memdos
subroutine absdos
subroutine eloss
subroutine ecalc2(e0,x,z,elos)
subroutine tloss(e,ax)
subroutine tecalc(thckns,efin)
subroutine ibarra
subroutine mtfrma
subroutine anasys
subroutine baksys
subroutine chisys
subroutine tapsys
subroutine crtcal
mod03.f:
subroutine errlex( iernum, messag )
subroutine lukup(kwdval, kwdtbl,nchtab,nwdtab,
jwrdar,ncwdar)
subroutine fkwdvl
subroutine frmfra
subroutine frmint
subroutine frmkwd
subroutine gcard
subroutine fnnblc(ipcard, nsize, nchars, nchlnb)
subroutine echcrd(lunout, ipcard, nsize, nchars)
subroutine gchar
subroutine glexem
subroutine gnsep
function idgval( iargch )
subroutine initla
function ipchty( jargch )
mod04.f:
subroutine initpa
subroutine gstmt
subroutine gflexm
subroutine skpstm
subroutine errpar(iarg1, iernum, messap)
subroutine fstria
subroutine fsmtri
mod05.f:
subroutine prprst(iprint, ifcdbd, istmty, istknd,
z stnmls,nlsize,nminst)
subroutine prprs2(iprint, ifcdbd, istmty, istknd,
z stnmls,nlsize,nminst)
mod06.f:
subroutine errm( macnum, ierrnm )
subroutine exstmt
subroutine exfini
subroutine exlmbd(istknd, stnmls, nsize, nminst)
subroutine exsyst(istknd, stnmls, nsize, nminst)
subroutine exobje(istknd, stnmls, nsize, nminst)
subroutine exrun(stnmls, nsize, nminst)
subroutine exrsmo(stnmls, nsize, nminst)
subroutine exlaye(stnmls, nsize, nminst)
subroutine exexpo(istknd, stnmls, nsize, nminst)
subroutine exdvmo(istknd, stnmls, nsize, nminst)
subroutine exdvtm(istknd, stnmls, nsize, nminst)
mod07.f:
subroutine runmc1
subroutine runmc3
subroutine runmc4
subroutine runmc5
mod08.f:
subroutine prdate(lunout, nmcols)
subroutine ssgdte(kdate)
subroutine prtime(lunout)
subroutine ssgtim(utime, stime, idtime, kdtime)
subroutine etime2(utime, stime)
subroutine itoc2d(numb, kch1, kch2)
subroutine ssflub(lunout)
mod10.f:
subroutine inilab
subroutine iniimg
subroutine iniexp
subroutine inidev
subroutine inidif
subroutine iniprf
subroutine inimet
subroutine inimeb
subroutine inimxr
subroutine etchi1
subroutine etchi2(itype)
subroutine initib
mod11.f:
subroutine image
subroutine imgcon
subroutine imgco1(wvlen, hinarr, narsiz)
subroutine imgpro
subroutine clcmtf(ilmbd)
subroutine clmtfi(ilmbd)
subroutine cfour(zcoeff,numcof)
subroutine fourcf(lext,rs1,rl2,rs2,rl1,ai,n,numcof)
subroutine dfcotf(ilmbd)
subroutine parcoh(ilmbd)
subroutine parco1(ilmbd)
subroutine parco2(ilmbd)
subroutine fastpc(ilmbd)
subroutine outpat(ilmbd)
subroutine pltpat(ilmbd)
subroutine pltotf
subroutine imgmsg(numb)
subroutine cntrst(xntrst)
subroutine cross
function ft2(x)
function ft3(x)
function gc1(x)
function gt1(x)
function gt2(x)
function ft2i(x)
function ft3i(x)
function gc1i(x)
function gt1i(x)
function gt2i(x)
subroutine imgrd
mod12.f:
subroutine expose
subroutine clcmzd
subroutine clcmxz
subroutine dgrdm(rmxz, nxsize, nzsize, nx, nz, dgradm)
subroutine rmvcel
subroutine celint(celdos)
function func(y)
subroutine expmsg(numb)
mod13.f:
subroutine diffus(sigma, idimen)
function sum4q(warray,isize,jsize, ni, nj)
subroutine pr2dar(arname,isize,jsize, ni, nj, iprint)
mod14.f:
subroutine dvelop
function rate(cz)
function drate2(rm)
subroutine linear
subroutine cycle
subroutine bndary
subroutine pltout(ioutpt)
subroutine plothp(ioutpt)
subroutine prtpts(ioutpt)
subroutine devmsg(numb)
subroutine pltmsg
mod15.f:
subroutine rietch
subroutine stprfl
subroutine svprof
subroutine circle(radius,height,width,xznpts,nmpts,nsize,
* window,delta)
subroutine findxo(xzpts,nsize,nmpts)
subroutine setrt
subroutine fdminx(istart)
subroutine fdmaxx(istop)
subroutine fdmaxz(istop)
function zptmin(layer)
function zptmax(layer)
function zpamax(numlay)
function zpamin(numlay)
subroutine detlyr(mlayer,index)
subroutine dctlyr(mlayer,cz)
function risort(mlayer)
function riert(mlayer)
function rimrt(theta,mlayer,index,itype)
function rtmax()
function terp(yone,ytwo,xtwo,xtwxt,xinc)
subroutine rieadv
subroutine clcang(theta,nsize)
function angavg(theta1,theta2,dcang)
function cmpang(theta1,theta2,param)
function specrt(mlayer,cz,iparam)
subroutine inters()
integer function ichkun (strtly,endlyr,top1,top2,nhang)
integer function ichklr (layer,top1,top2,nhang)
complex function xtndpt (lorr,outerpt,innerpt)
integer function intsec (under1,under2,top1,top2)
integer function incomp (ytop1,yund1,ytop2,yund2,ntchng)
real function yinter (xval,point1,point2)
function laydt1(yval)
subroutine chkovr()
function ntopov()
subroutine
prtnum(ncrvs,ncurnt,iounit,cxz,nsize,nopts,xmin,xmax,
* zmin,zmax)
subroutine pltlpr(ioutpt)
subroutine
pltdgt(ncrvs,ncurnt,iounit,cxz,nsize,nopts,xmin,xmax,
* zmin,zmax)
subroutine pltugt(ncrvs,ncurnt,iounit,nlayer,
* xmin,xmax,zmin,zmax)
subroutine pltcap(iounit)
subroutine ethmsg(numb,index)
subroutine etmsg2(numb,index)
subroutine ethead(nmhead)
mod16.f:
subroutine dpmain
subroutine dpmesg
subroutine shadw1
subroutine advnce
subroutine evrate(mtype)
function mrate1(wi,wf,angle1,angle2,fnorm)
function mrate2(wi,wf,angle1,angle2,fnorm)
function mrate3(wi,wf,fnorm)
function mrate4(wi,wf,dl,dr,aiw,csthet,fnorm)
function mrate5(wi,wf,fnorm)
function evalux(wang)
function evaluz(wang)
subroutine diff
function anorm(i)
subroutine plot(ioutpt)
subroutine dpunch(ioutpt)
subroutine pltbot
mod17.f:
subroutine ebctrl(numb)
subroutine mltspt
subroutine egauss
subroutine weight
subroutine prarry(numb)
subroutine mltlin(numb)
subroutine boundr
subroutine earray
subroutine sqwgt
subroutine spwgt
subroutine ebdev
function ebrate(cz)
subroutine ecycle
subroutine eplot
subroutine ebmsg(numb)
mod18.f:
subroutine xrctrl(numb)
subroutine mkary
subroutine prtary
subroutine xrdev
function xrrate(cz)
subroutine xcycle
subroutine xrmsg(numb)
subroutine xrplmg
mod19.f:
subroutine ibdev
function zirate(cz)
subroutine icycle
subroutine iplot
subroutine ibmsg(numb)
subroutine prarra
subroutine ibplmg
mod21.f:
subroutine stopnm( nmstop )
subroutine opblin(lunout, nblins)
subroutine blnkpl(iplt,nxsize,nysize,nxuse,nyuse)
subroutine plbrdr(iplt,nxsize,nysize,nxuse,nyuse, kchbor)
subroutine pllprf(nptout, iplt,nxsize,nzsize,nxuse,nzuse,
kplchr,
z zhtlin, xmin,xmax,zbot,ztop,
x,z,nxzsiz,nxzpts,
z npoutr)
subroutine prnplt(lunout, iplt,nxsize,nzsize,nxuse,nzuse,
lmargn)
subroutine opldth(lunout, xmin, xmax, ymin, ymax, numcur)
subroutine ipldtc(lunin, x,y,nsize, npts)
subroutine opldtc(lunout, x,y,nsize, npts)
subroutine cmpl2r(xzarr, nsiz1, x, nsiz2, z, nsiz3, npts)
subroutine r2cmpl(xzarr, nsiz1, x, nsiz2, z, nsiz3, npts)
subroutine negarr(x, nsize, nelem)
mod22.f:
real function acos(c)
subroutine gauss(fun,a,b,rin)
real function gsn(x,rmu,sig)
real function erf(y)
real function gaussn(r,sigma)
subroutine strrea(area, xz,nsize,npts, xlft, xrgt)
mod23.f:
subroutine
chkr1(xzpts,nsize,nmpts,xsize,xminx,zminz,xmaxx,zmaxz,
& idiag)
subroutine delete(xz, nsize, npts, i)
subroutine add(xz, nsize, npts, i)
subroutine
chkr2(xzpts,nsize,nmpts,xminx,xmaxx,zmaxz,idiag,ttot)
subroutine dloop(xzpts,nsize,nmpts,xmaxx,zmaxz)
subroutine flattn(xzpts,nsize,nmpts,xleft,xright,dx,zflat)
function icrsup(ifrom,zlevel,xzpts,nsize,nmpts)
function icrsdn(ifrom,zlevel,xzpts,nsize,nmpts)
function xisect(x1,z1,x2,z2,zlevel)
subroutine filpit(iup,idown,dltx,zlevel,xzpts,nsize,nmpts)
subroutine fltlft(iup,dltx,zlevel,xleft,xzpts,nsize,nmpts)
subroutine
fltrgt(idown,dltx,zlevel,xright,xzpts,nsize,nmpts)
subroutine shift(ibegin,ichnge,xzpts,nsize,nmpts)
subroutine
mkflat(xzpts,nsize,nmpts,xleft,xright,delx,zlevel)
subroutine shadow
subroutine adjusr(m,ipflag)
subroutine adjusl(m,ipflag)
function dist(x,z,cossrc,tansrc)
function proj(x,z,cossrc,tansrc)
SYNTAX AND SEMANTICS FOR THE PARSER
This section includes the precise definitions of the input state-
ments to the program SAMPLE. The parser implements these defini-
tions.
The grammar for the lexical-scanner defines the keywords,
numbers, separators (statement-separator symbol, and lexical to-
ken separators), end-of-input token, and the error-token. The
grammar for the parser defines statements from the keywords and
numbers. Each statement deals with one component of the system
to be simulated, or tells the program to run a part of the simu-
lation, or merely defines a parameter of the simulation. The
parser input language is defined to be simple. Its semantics are
based on the intended meaning of the statement by the user. This
input language is defined over all possible combinations of the
lexical tokens obtained from the lexical analyzer. The syntax
definitions and comments on semantics for each statement are
given below. In the syntax definition upper case letters are
used for the keywords in the input and lower case letters are
used for other tokens (e.g. numbers,
lexical token, and the ). In the syntax-
definitions the is not explicitly shown. An
occurring in a statement, or any arrangement of
lexical-tokens other than the ones shown below is considered to
be generating the . Erroneous-stmts are handled
by the error-handling routine in the parser and another routine
which skips over the current till the next sen-
sible beginning for a statement (i.e. a proper keyword or the
lexical token is found). The seman-
tics, i.e. the meaning, of all other statements is given immedi-
ately after the syntax definition in terms of the parameters in
the statement.
* * *
{All numbers are considered to be real, unless explicitly
mentioned to be integers}
-1) (= )
0) ::=
This statement informs the end of input statements to be
processed, so various things to be done at the end of the
run can be done.
::= TRIAL number1
| number
This statement gives the numbers to the user-defined subr
'extria' to handle them as it wishes. The intent of this
statement is to be able to introduce new things in the
program very conveniently on a trial basis. Its use is
limited only by the user's ingenuity in writing the subr
extria (etc). Currently, the convention is: number1
(converted to an integer) is the action number that specifies
some particular action that should be performed by the program
using the following numbers, if any, as parameters to be used
in that action.
::=
| number
Where the is one of the keywords in a list of words
stored in the program (e.g. RECOVER, STOP, HELP, EXECTIMES,
LAMBDA, etc).
Internally this statement gets mapped onto the
with an action number as stored
in a list of action numbers corresponding to the s.
The "type" of the native mode trial-stmt as stored in the
program is 1 and the "kind" is -1, whereas the mapped
trial-stmt starts as being "type" = 2, and changes it to 1,
and the "kind" being the index of the in the
statement ( >= 1 ).
1) ::=
|
With their meanings as described above.
So the statements ( ) in the input may be defined as:
::=
|
|
with their meanings as described above.
Historical Note: As defined in 1977, there were many more
keyword-specific statements in the grammar for the parser. The
TRIAL statement was introduced as an easy way to add new func-
tional capabilities into the program. By convention, the first
number following the word TRIAL in the input was considered to
denote the action desired from the program on reading that TRIAL
statement. Very quickly the total number of TRIAL-stmts (i.e.
the actions introduced via the TRIAL-stmt) grew to be a very
large number (approx. 70 against the 12 other keyword-specific
stmts). As an aid to memory an attempt was made to introduce new
words in the input syntax that were internally mapped onto a
TRIAL-stmt with a specific action number. Soon it was realized
that even the original keyword-specific statements could be con-
verted to such "mapped TRIAL" statements. So they were all con-
verted to mapped TRIAL-stmts (in Feb 1983). Since the TRIAL-stmt
can have only numbers following the keyword TRIAL, no other key-
words are allowed in it. So even the mapped TRIAL statement does
not allow any keyword other than the first keyword (the one that
gets mapped) in it. As a result, the keyword TO was dropped from
the DEVTIME and DOSE keywords' statements. The ETCHRATE state-
ment which had two variants (ETCHRATE ANALYTIC, and ETCHRATE
CURVE) was retained in version 1.5b (May 1983) in its old form
for the sake of compatibility with the previous versions and the
many old input decks. It has been removed in version 1.6a
(February 1984). The more general mapped-TRIAL statement, DEV-
RATE (=TRIAL 209) can perform all the tasks of the old ETCHRATE-
stmt. (Moreover, the name ETCHRATE was misleading -- it was ac-
tually a development rate specification statement.) Following is
a list of the original keywords that headed keyword specific
statements but which are now considered to form mapped-TRIAL
statements. Also the action numbers for their mapped-TRIAL
statement are given next to them.
LAMBDA 201
DOSE 202
PROJ 204
CONTACT 205
LINE 206
SPACE 207
LINESPACE 208
DEVTIME 212
RESMODEL 213
RUN 214
LAYERS 215
And of course, DEVRATE (TRIAL 209) supersedes the old ETCHRATE.
The meanings and restrictions on the number of parameters etc.
for these statements are described fully in the TRIAL statements'
documentation corresponding to the action numbers listed above.
Thus, compatibility has been maintained with the previous ver-
sions of the program so that most old input decks can still be
run with the current version. For a complete listing of changed
commands, refer to the "Important Changes" section of the manual.
[]
CHAPTER 4: OVERVIEW
This chapter is a collection of standard output files created in
SAMPLE. Most of the output files here are the result of the in-
put files listed in the Command Reference Chapter. The examples
are grouped according to the machine on which they were run.
Each machine has different runs, emphasising different aspects of
the program. Each file begins with the SAMPLE header. The first
two input statements after the SAMPLE header identify the exam-
ple. The third input statement indicates the output file name.
For instance, in the first example:
1
1-----------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL. EECS. UCB)
(Version 1.8a June 1, 1991)1989)
(VAX/UNIX version 1.0 June 1, 1991)
Mon Mar 6 10:36:53 1991
1-----------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE sample> # SINGLE WAVELENGTH
PROJECTION (DEFAULTS) sample> # Input File: samop0
This run is an optical lithography example that uses a single
wavelength projection. "Defaults" means this session in SAMPLE
is based on the programmed default values of the machine. Samop0
is the on-line input file that was run. All of the examples
shown here are listed in the Table of Contents; use this listing
as a source of reference. []
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:28:35 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # SINGLE WAVELENGTH PROJECTION (DEFAULTS)
sample> # Input File: samop0
sample> lambda 0.4358 ; # lambda parameter
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> linespace 1.25 1.25 ; # linespace parameters
The mask is a grating with a periodic pattern of
line/space 1.25000 1.25000 micrometers wide
sample> parcohdef 0 0.7 1.5 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 1.50
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.2800 circle 0.70 1.50
A periodic mask pattern with 1.2500 um wide lines and 1.2500 um wide spaces.
Intensity window is 1.2500 um wide.
Mask edge (L/S) is located at 0.6250 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
Slope at the mask edge is: 1.119 (1/um.)
Contrast by image min,max is: 0.912
Window contrast is: 0.912
1
sample> resmodel ((0.4358))
sample> (0.551, 0.058, 0.010)
sample> (1.68, ((-0.02))) (0.7133) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.55100 (1/um), B = 0.05800 (1/um), C = 0.01000 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 0.71330 micrometers.
sample> layers (4.73,-0.136)
sample> (1.47,0.0,0.0741) ; # layer parameters
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.13600)
and other layers with
refractive index thickness in um.
( 1.47000, 0.00000) 0.07410
and a resist layer on top.
sample> dose 150 ; # dose for exposure
Single exposure at the intensity of 150.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 150.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5510 0.0580 0.0100
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 0.7133 um
Layer no. 2 thickness = 0.0741 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.021
Layer no. 2 index(n+ik) = 1.47 0.000
Substrate index(n+ik) = 4.73 -0.136
Intermediate results :
Photoresist has 96 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00743 um
Width of horizontal grid divisions is .02551 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.9 15.8 23.8 31.7 39.6
Wavelength .4358 um: 0.3262 0.3377 0.3488 0.3594 0.3694 0.3790
Dose (mJ/cm**2): 47.5 55.4 63.8 73.3 84.3 97.0
Wavelength .4358 um: 0.3880 0.3964 0.4047 0.4136 0.4228 0.4323
Dose (mJ/cm**2): 111.5 128.2 147.5
Wavelength .4358 um: 0.4419 0.4512 0.4601
1
sample> devrate 1 (5.63, 7.43, -12.6) ; # resist development parameters
The development rate is given by an analytic function in M as :
rate(M) = exp(E1 + E2*M + E3*M*M)/10000 um/sec
where E1 = 5.6300, E2 = 7.4300, E3 = -12.6000
sample> devtime 15 75, 5 ; # development times
Develop the resist from 15.00000 to 75.00000 seconds in 5 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
E1 = 5.63 E2 = 7.43 E3 = -12.60
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 75.0 sec
Maximum develop rate = 0.083325 um/sec., at M = 0.2948
Initial development run
Background develop rate(bulk) = 0.00016 um/sec
m=.75 develop rate(bulk) = 0.00613 um/sec
m=.50 develop rate(bulk) = 0.04903 um/sec
The developer has broken through the resist in 34.9 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 0.6250 0.3934 0.4484
30.0 0.6250 0.6498 0.0890
45.0 -0.0596 0.7075 0.0081
60.0 -0.1962 0.7118 0.0022
75.0 -0.2470 0.7067 0.0093
time linewidth height linewidth height slope(deg) linewidth height
min max top
45.0 0.9090 0.1256 1.7350 0.0591 -76.3 0.7179 0.5154
60.0 0.7806 0.1252 1.4085 0.0617 -80.5 0.6489 0.5157
75.0 0.7052 0.1360 1.2591 0.0627 -82.0 0.5958 0.5227
CD = Critical Dimension i.e. the resist line or space width.
The slope above is computed using a CDmin in the range
from 0.5686 to 0.6983 micrometers below the top
of the resist and another CDtop in the range
from 0.1297 to 0.2594 micrometers below the top of the resist.
x left = -0.6250 micrometers
x right = 0.6250 micrometers
z top = 0.0000 micrometers
z bottom = 0.7133 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec x = -0.0594 micrometers 77.4 degrees
d 60.0 sec x = -0.1960 micrometers 80.9 degrees
e 75.0 sec x = -0.2474 micrometers 82.2 degrees
The window is 1.2500 micrometers wide in x.
The edge is 0.6250 micrometers from the left side of the window.
******************************************************************************
*b bb bb bb.bb bb bb ba aa a aa.a 0 . . . . +*
*e ee ee ee ee ee ededdcccbbbbb aaaa . *
* eeddc bb aaa . *
* ed c b a . *
* eedcc bb aa . *
* eeeddc cb a aa . *
* eeedededcccbb ba.a a a *
* e e ed cc b bb aa a a a a *
* eddcccbb aa . *
* edd c b a . *
*. eed c b aa . .*
* eeddcc b b aa a *
* e e e e dcbc bb b a a aa a aa *
* ee eeeded c cb b b b a aaa *
* eeddc c bbb . aa *
* e d c b . a *
* e d c b . a *
* ee dcc bb . a *
* ee e e d c c b bb aaa a a aa *
* e eedeed dcccbc b bb b a aa aa a a a*
*. eeedd d cc bbbb . .*
* e d c bb . *
* e d c b . *
* eedddc c bb . *
* eeeedd d ccbb bb b b *
* e e eded dc cccc c bb bb bb b *
* ee e e d cc c . b b b *
* ee dd cc . bb *
* e d c . b *
* ee dd cc . bb *
*. e ede ddcc cc . bb b .*
* ee eeeeeeeddddc cc c c c bb bb bb b b b bb b b*
* e ee e ed d dc cc c c c *
* ee ddd cc . *
*. . . e d . c . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 34.24 lines.)
The resist has developed through to the substrate
at one or more points in the 45.0 sec output.
The approximate number of adv/um is 576.20
Output c took 411 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 19.820u, 0.420s seconds 15:28:56
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:29:15 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # SINGLE WAVELENGTH PROJECTION WITH DESCUM
sample> # Input File: samop1
sample> lambda 0.4358 ; # lambda parameter
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> linespace 1.25 1.25 ; # linespace parameters
The mask is a grating with a periodic pattern of
line/space 1.25000 1.25000 micrometers wide
sample> optimgexp 1 0 1 0 0 ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> parcohdef 0 0.7 1.5 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 1.50
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.2800 circle 0.70 1.50
A periodic mask pattern with 1.2500 um wide lines and 1.2500 um wide spaces.
Intensity window is 1.2500 um wide.
Mask edge (L/S) is located at 0.6250 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 1.0000
Partial coherence: sigma = 0.70
Defocus by 1.50 micrometers
X window = 1.2500 micrometers in x.
The edge is 0.625 micrometers from the left window boundary.
****************************************************
*+ . . -1.3- . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*+------------------------1-----------------------+*
* . aaa*
* . aaa *
*+ . a +*
* . aa *
* . a *
*+ . a +*
* . a *
* . a *
*+ . a +*
* . a *
* . a *
*+ . a +*
* . a *
* . a *
*+ . a +*
* . a *
* . a *
*+ . a +*
* .a *
* a *
*+ a. +*
* a . *
* a . *
*+ aa . +*
* aa . *
* aa . *
*+ aaa . +*
* aaaaaaa . *
*aaaaaa . *
*+ . . 0 . . +*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.026 0.051 0.077 0.102 0.128 0.153 0.179 0.204 0.230
i(x): 0.044 0.045 0.045 0.046 0.047 0.048 0.050 0.053 0.056 0.060
x : 0.255 0.281 0.306 0.332 0.357 0.383 0.408 0.434 0.459 0.485
i(x): 0.065 0.071 0.078 0.087 0.097 0.108 0.121 0.136 0.153 0.171
x : 0.510 0.536 0.561 0.587 0.612 0.638 0.663 0.689 0.714 0.740
i(x): 0.192 0.214 0.238 0.264 0.292 0.321 0.352 0.384 0.418 0.452
x : 0.765 0.791 0.816 0.842 0.867 0.893 0.918 0.944 0.969 0.995
i(x): 0.488 0.524 0.560 0.597 0.633 0.668 0.703 0.737 0.769 0.800
x : 1.020 1.046 1.071 1.097 1.122 1.148 1.173 1.199 1.224 1.250
i(x): 0.828 0.855 0.879 0.900 0.918 0.933 0.945 0.954 0.959 0.961
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 1.119 (1/um.)
Contrast by image min,max is: 0.912
Window contrast is: 0.912
1
sample> resmodel ((0.4358))
sample> (0.551, 0.058, 0.010)
sample> (1.68, ((-0.02))) (0.7133) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.55100 (1/um), B = 0.05800 (1/um), C = 0.01000 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 0.71330 micrometers.
sample> layers (4.73,-0.14)
sample> (1.47,0.0,0.0741) ; # layer parameters
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.14000)
and other layers with
refractive index thickness in um.
( 1.47000, 0.00000) 0.07410
and a resist layer on top.
sample> dose 150 ; # dose for exposure
Single exposure at the intensity of 150.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 150.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5510 0.0580 0.0100
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 0.7133 um
Layer no. 2 thickness = 0.0741 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.021
Layer no. 2 index(n+ik) = 1.47 0.000
Substrate index(n+ik) = 4.73 -0.140
Intermediate results :
Photoresist has 96 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00743 um
Width of horizontal grid divisions is .02551 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.9 15.8 23.8 31.7 39.6
Wavelength .4358 um: 0.3262 0.3377 0.3488 0.3594 0.3694 0.3790
Dose (mJ/cm**2): 47.5 55.4 63.8 73.3 84.3 97.0
Wavelength .4358 um: 0.3880 0.3964 0.4047 0.4136 0.4228 0.4323
Dose (mJ/cm**2): 111.5 128.2 147.5
Wavelength .4358 um: 0.4419 0.4512 0.4601
1
sample> optdevelop 0 1 0 ; # profile coordinates for plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devrate 1 (5.63, 7.43, -12.6) ; # resist development parameters
The development rate is given by an analytic function in M as :
rate(M) = exp(E1 + E2*M + E3*M*M)/10000 um/sec
where E1 = 5.6300, E2 = 7.4300, E3 = -12.6000
sample> devtime 15 75, 5 ; # development times
Develop the resist from 15.00000 to 75.00000 seconds in 5 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
E1 = 5.63 E2 = 7.43 E3 = -12.60
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 75.0 sec
Maximum develop rate = 0.083325 um/sec., at M = 0.2948
Initial development run
Background develop rate(bulk) = 0.00016 um/sec
m=.75 develop rate(bulk) = 0.00613 um/sec
m=.50 develop rate(bulk) = 0.04903 um/sec
The developer has broken through the resist in 34.9 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 0.6250 0.3934 0.4485
30.0 0.6250 0.6498 0.0890
45.0 -0.0588 0.7063 0.0098
60.0 -0.1957 0.7095 0.0053
75.0 -0.2473 0.7106 0.0038
time linewidth height linewidth height slope(deg) linewidth height
min max top
45.0 0.9107 0.1273 1.7569 0.0589 -76.2 0.7178 0.5201
60.0 0.7805 0.1305 1.4087 0.0617 -80.3 0.6487 0.5160
75.0 0.7033 0.1329 1.2395 0.0621 -82.3 0.5963 0.5242
CD = Critical Dimension i.e. the resist line or space width.
The slope above is computed using a CDmin in the range
from 0.5686 to 0.6983 micrometers below the top
of the resist and another CDtop in the range
from 0.1297 to 0.2594 micrometers below the top of the resist.
x left = -0.6250 micrometers
x right = 0.6250 micrometers
z top = 0.0000 micrometers
z bottom = 0.7133 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec x = -0.0607 micrometers 77.2 degrees
d 60.0 sec x = -0.1954 micrometers 80.9 degrees
e 75.0 sec x = -0.2466 micrometers 82.3 degrees
The window is 1.2500 micrometers wide in x.
The edge is 0.6250 micrometers from the left side of the window.
******************************************************************************
*b bb bb bb.bb bb bb ba aa a aa.a 0 . . . . +*
*e ee ee ee ee ee eeeddccb b b a aaaa . *
* eedcc bbb aa . *
* ed c b a . *
* eed c bb aa . *
* eded ccb b aa a . *
* ee eeedd ccb bba.a a a *
* e eeed dbc bb b a aa aa a a *
* edddc b aa . *
* ed c b aa . *
*. e d c b a . .*
* eee dc bbb a a a *
* e e e ed cc bb bb aa aa a aa *
* e eee ee ddccc bb b aa a *
* ee ddcc bb b . aa *
* e d c b . a *
* e d c b . a *
* ee dcc bbb . a *
* ee e edcc cc b bb aa a a aa *
* e eee e dd c ccbbbbbbb a aa aa a a a*
*. e e dcccc b b b . .*
* eedd c bb . *
* e d c b . *
* eeddd c bbb . *
* e e e dd cc bb bb bb *
* eee eeddddccc ccbbb b bb bbbbb *
* eeeddcd c c c . bb b *
* eeed c . bb *
* e d c . b *
* e d c . b *
*. e ed e dc c c . bb bb .*
* ee e e e.dddd c c c ccccb bb bb bb bb b bb b b*
* ee e e e d d.c c cc c c *
* e ed d cc . *
*. . . e d . c . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 34.24 lines.)
The resist has developed through to the substrate
at one or more points in the 45.0 sec output.
The approximate number of adv/um is 576.20
Output c took 411 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample> descumspec 0.02, 0.04, 3 ; # run descum
**************
* Run Descum *
**************
Amounts descummed for profile :
a = 0.020 um
b = 0.030 um
c = 0.040 um
Descum rate = 0.0004 um/sec.
*****************
* Run develop *
*****************
Parameter values :
E1 = 5.63 E2 = 7.43 E3 = -12.60
First development output = 50.0 sec
Time increment between profile outputs = 25.0 sec
Final development output = 100.0 sec
Maximum develop rate = 0.083325 um/sec., at M = 0.2948
Intermediate development run
(warning: number of advances per output set
by initial development run)
Background develop rate(bulk) = 0.00016 um/sec
m=.75 develop rate(bulk) = 0.00613 um/sec
m=.50 develop rate(bulk) = 0.04903 um/sec
---- Developed pattern ----
time distance max depth norm thik
from mask edge
50.0 -0.2660 0.7003 0.0182
75.0 -0.2772 0.7051 0.0114
100.0 -0.2871 0.7035 0.0137
time linewidth height linewidth height slope(deg) linewidth height
min max top
50.0 0.6637 0.1357 0.8625 0.0604 -82.0 0.5552 0.5180
75.0 0.6433 0.1300 0.8119 0.0605 -82.1 0.5352 0.5179
100.0 0.6233 0.1298 0.7397 0.0552 -82.1 0.5152 0.5180
CD = Critical Dimension i.e. the resist line or space width.
The slope above is computed using a CDmin in the range
from 0.5686 to 0.6983 micrometers below the top
of the resist and another CDtop in the range
from 0.1297 to 0.2594 micrometers below the top of the resist.
x left = -0.6250 micrometers
x right = 0.6250 micrometers
z top = 0.0000 micrometers
z bottom = 0.7133 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 50.0 sec x = -0.2682 micrometers 82.2 degrees
b 75.0 sec x = -0.2781 micrometers 82.3 degrees
c 100.0 sec x = -0.2881 micrometers 81.3 degrees
The window is 1.2500 micrometers wide in x.
The edge is 0.6250 micrometers from the left side of the window.
******************************************************************************
*+ . . . 0 . . . . +*
* . *
*b bb bb bb bb bba . *
*c cc cc cc cc cba . *
* ca . *
* cca . *
* ccbba . *
* ccbaa . *
* cba . *
* cca . *
*. cca . .*
* cba . *
* cbb a . *
* cbba . *
* cb . *
* cca . *
* cca . *
* cba . *
* ccb a . *
* ccbb a . *
*. cba . .*
* ca . *
* cba . *
* cb . *
* ccba . *
* cccba . *
* ccba . *
* cb . *
* ca . *
* cba . *
*. ccba . .*
* cc bbaa . *
* ccba . *
* ccb . *
*. . cba . . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 34.24 lines.)
The resist has developed through to the substrate
at one or more points in the 50.0 sec output.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 23.310u, 0.580s seconds 15:29:44
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:30:03 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # TWO WAVELENGTH PROJECTION
sample> # Input File: samop2
sample> optimgexp (1 0 1), (0 0) ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> lambda (0.4358 1.0),
sample> (0.4047 0.50) ; # multiple wavelengths
Multiple wavelength illumination
at the following wavelengths (in um.) and relative intensities
( 0.43580 1.00000)
( 0.40470 0.50000)
sample> proj 0.28 ; # numerical apeture
The imaging system is
a projection type system with NA = 0.28000
sample> linespace 1 1 ; # linespace
The mask is a grating with a periodic pattern of
line/space 1.00000 1.00000 micrometers wide
sample> parcohdef 0 0.7 2.0 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 2.00
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 0.6667 0.2800 circle 0.70 2.00
0.4047 0.3333 0.2800 circle 0.70 2.00
A periodic mask pattern with 1.0000 um wide lines and 1.0000 um wide spaces.
Intensity window is 1.0000 um wide.
Mask edge (L/S) is located at 0.5000 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 0.6667
b 0.4047 0.3333
Partial coherence: sigma = 0.70
Defocus by 2.00 micrometers
X window = 1.0000 micrometers in x.
The edge is 0.500 micrometers from the left window boundary.
****************************************************
*+ . . -1.3- . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*+------------------------1-----------------------+*
* . *
* . *
*+ . +*
* . *
* . bb*
*+ . bbbbcc*
* . bbccccaa*
* . bbcca *
*+ . bcc +*
* . bcc *
* . bca *
*+ . cc +*
* . bca *
* . bc *
*+ . cc +*
* . c *
* . c *
*+ . cc +*
* .c *
* ac *
*+ cc. +*
* cc . *
* ccb . *
*+ ccb . +*
* ccb . *
* accc . *
*+ cccccc . +*
*cccccc . *
* . *
*+ . . 0 . . +*
****************************************************
c is composite intensity pattern
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.020 0.041 0.061 0.082 0.102 0.122 0.143 0.163 0.184
i(x): 0.075 0.075 0.076 0.077 0.080 0.082 0.086 0.090 0.095 0.101
x : 0.204 0.224 0.245 0.265 0.286 0.306 0.327 0.347 0.367 0.388
i(x): 0.108 0.116 0.125 0.135 0.145 0.157 0.170 0.185 0.200 0.217
x : 0.408 0.429 0.449 0.469 0.490 0.510 0.531 0.551 0.571 0.592
i(x): 0.234 0.253 0.273 0.294 0.316 0.339 0.363 0.387 0.412 0.437
x : 0.612 0.633 0.653 0.673 0.694 0.714 0.735 0.755 0.776 0.796
i(x): 0.463 0.489 0.514 0.540 0.565 0.590 0.614 0.637 0.659 0.680
x : 0.816 0.837 0.857 0.878 0.898 0.918 0.939 0.959 0.980 1.000
i(x): 0.699 0.717 0.733 0.747 0.759 0.769 0.777 0.783 0.786 0.787
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 1.144 (1/um.)
Contrast by image min,max is: 0.827
Window contrast is: 0.827
1
sample> dose 80 ; # dose
Single exposure at the intensity of 80.00000 millijoules per sq. centimeter
sample> layers (4.82 -0.0117), # substrate refractive index
sample> (1.47 0.0, 0.0737) ; # oxide layer on substrate
The wafer has the following layers -
a substrate with refractive index of ( 4.82000, -0.01170)
and other layers with
refractive index thickness in um.
( 1.47000, 0.00000) 0.07370
and a resist layer on top.
sample> # refractive index and thickness
sample> resmodel 0.4358
sample> (0.551 0.058 0.010),
sample> (1.68 (-0.02)), 0.7133 ; # resist parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.55100 (1/um), B = 0.05800 (1/um), C = 0.01000 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 0.71330 micrometers.
sample> mulwavres 2 0.4358 0.4047 # two wavelengths
sample> (0.551 0.058 0.010), # A B C parameters at 1st wavelength
sample> (1.055 0.094 0.020), # A B C parameters at 2nd wavelength
sample> 1.0 0.5 ; # weighting factors.
this trial21 statement sez n= 2
the first two lambdas are 0.4358 0.4047
at lambda1 the abc set is 0.551 0.058 0.010
at lambda2 the abc set is 1.055 0.094 0.020
the relative intensities are 1.000 0.500
sample> refracmull
sample> (1.68 # refractive indices, 1st wavelength
sample> 1.47 0.00
sample> 4.82 -0.117),
sample> (1.67 # refractive indices, 2nd wavelength
sample> 1.47 0.00
sample> 5.61 -0.190) ;
the multiple wavelength refractive index info is as follows -
at wavelength( 1)
1.68000
( 1.47000, 0.00000)
( 4.82000, -0.11700)
at wavelength( 2)
1.67000
( 1.47000, 0.00000)
( 5.61000, -0.19000)
sample> exposerun ; # run expose machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 80.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5510 0.0580 0.0100
.4047 1.0550 0.0940 0.0200
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 0.7133 um
Layer no. 2 thickness = 0.0737 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.021
Layer no. 2 index(n+ik) = 1.47 0.000
Substrate index(n+ik) = 4.82 -0.117
Wavelength: .4047 um
Vertical standing wave period in the photoresist is 0.1212 um
Layer no. 1 index(n+ik) = 1.67 -0.037
Layer no. 2 index(n+ik) = 1.47 0.000
Substrate index(n+ik) = 5.61 -0.190
Intermediate results :
Photoresist has 103 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00693 um
Width of horizontal grid divisions is .02041 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.1 14.1 21.2 28.3 35.3
Wavelength .4358 um: 0.3297 0.3419 0.3538 0.3653 0.3764 0.3870
Wavelength .4047 um: 0.0226 0.0263 0.0309 0.0363 0.0425 0.0494
Dose (mJ/cm**2): 42.4 49.5 56.9 65.4 75.3 86.6
Wavelength .4358 um: 0.3969 0.4063 0.4155 0.4252 0.4352 0.4453
Wavelength .4047 um: 0.0568 0.0647 0.0732 0.0832 0.0947 0.1074
Dose (mJ/cm**2): 98.0 109.4 120.8
Wavelength .4358 um: 0.4541 0.4616 0.4680
Wavelength .4047 um: 0.1194 0.1304 0.1401
1
sample> optdevelop 0 1 0 ; # profile coordinates for plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devtime 15 75, 5 ; # development times
Develop the resist from 15.00000 to 75.00000 seconds in 5 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
E1 = 5.63 E2 = 7.43 E3 = -12.60
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 75.0 sec
Maximum develop rate = 0.083325 um/sec., at M = 0.2948
Initial development run
Background develop rate(bulk) = 0.00016 um/sec
m=.75 develop rate(bulk) = 0.00613 um/sec
m=.50 develop rate(bulk) = 0.04903 um/sec
The developer has broken through the resist in 50.4 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 0.5000 0.5161 0.2764
30.0 0.5000 0.6457 0.0948
45.0 0.5000 0.6614 0.0727
60.0 -0.0248 0.7102 0.0043
75.0 -0.1446 0.7083 0.0070
time linewidth height linewidth height slope(deg) linewidth height
min max top
60.0 0.6331 0.1266 1.4747 0.0511 -82.5 0.5352 0.4940
75.0 0.5504 0.1206 1.1853 0.0546 -84.8 0.4812 0.5005
CD = Critical Dimension i.e. the resist line or space width.
The slope above is computed using a CDmin in the range
from 0.5686 to 0.6983 micrometers below the top
of the resist and another CDtop in the range
from 0.1297 to 0.2594 micrometers below the top of the resist.
x left = -0.5000 micrometers
x right = 0.5000 micrometers
z top = 0.0000 micrometers
z bottom = 0.7133 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec
d 60.0 sec x = -0.0239 micrometers 82.9 degrees
e 75.0 sec x = -0.1454 micrometers 85.0 degrees
The window is 1.0000 micrometers wide in x.
The edge is 0.5000 micrometers from the left side of the window.
******************************************************************************
*a aa . . . 0 . . . . +*
*c cc cc bb bb bb aa aa a . *
*e ee ee ed dd cc cb bb ba aa a . *
* ee eeded dc c bb aa . *
* ee dd cc b a . *
* e d c b a . *
* e d cc b a . *
* e d c bb aa . *
* e ddcc bb aa . *
* e e dc c b b a a *
*. eeeddccc b b aaa .*
* e dd c b aa . *
* eed c b a . *
* e d c b a . *
* eedd c b aa . *
* eed cccbb a . *
* ee ddcc c b a aa *
* e eee dd c bbb . a aaa *
* ee d dccc b b . a a a *
* ee dd cc bb .a *
*. e d c bb aa .*
* e dd c bb a *
* eedd cc b .aa *
* e e d c b b b . aa a *
* eee e dc c b bb b a aaa a a a *
* e eddcd c c b .b b a aa *
* eedd cc b b . aa *
* eedd c b . a *
* e d c b . a *
* ee d cc b . a *
*. eded dccc bb b . a a .*
* e ee e d d cc cb b b b a aa aa a*
* e eeeedddddcc cccc bb bb b b bb *
* ee ee dd c c c. b bb b *
* ee dd c c . bb *
* e d c . b *
* e d c . b *
* ee ddd c c . b *
* ee eedd d d cc.c c b b b b b b *
* e e e ee.e eeec d d d c cc c c c cc bbb b b b*
*. e ee e.e e eed dd d d dd ccc c c c*
* ee e d.d d *
* e d . *
*. . . . d . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 42.80 lines.)
The resist has developed through to the substrate
at one or more points in the 60.0 sec output.
The approximate number of adv/um is 466.84
Output d took 333 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 14.480u, 0.330s seconds 15:30:18
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:30:55 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # SINGLE WAVELENGTH WITH PROXIMITY EFFECT
sample> # Input File: samop3
sample> optimgexp 1 0 1 0 0 ; # image intensity plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> lambda 0.4358 ; # wavelength
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.167 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.16700
sample> irregumask 5.0 2.0 2.0 5.0 ; # complex mask
mask is irregular with the following attributes:
line width 5.0000
space width 2.0000
line width 2.0000
space width 5.0000
with a period of 18.0000 micrometers.
sample> parcohdef 0 .37 0.0 ; # partial coherence factor
this trial 20 statement requests partial coherence
sigma = 0.37
defocus= 0.00
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.1670 circle 0.37 0.00
Intensity window is 9.0000 um wide.
Mask edge (L/S) is located at 2.5000 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 1.0000
Partial coherence: sigma = 0.37
Defocus by 0.00 micrometers
X window = 9.0000 micrometers in x.
The edge is 2.500 micrometers from the left window boundary.
****************************************************
*+ . -1.3- . . . +*
* . *
* . *
*+ . a +*
* . a aa *
* . a a a *
*+ . +*
* . a a *
* . a *
*+-------------1-------------------------------a--+*
* . a a *
* . aa*
*+ . a +*
* . *
* . a *
*+ . +*
* . a *
* . a *
*+ . +*
* . *
* . *
*+ . +*
* . a *
* .a a *
*+ . +*
* . *
* . *
*+ . +*
* . a *
* a a *
*+ . +*
* . *
* . *
*+ . a +*
* a. a *
* . *
*+ . +*
* a . a a *
* a . a *
*aaaaaaaaaaa 0 . aaaaaa . +*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.184 0.367 0.551 0.735 0.918 1.102 1.286 1.469 1.653
i(x): 0.008 0.007 0.005 0.004 0.005 0.008 0.012 0.013 0.011 0.007
x : 1.837 2.020 2.204 2.388 2.571 2.755 2.939 3.122 3.306 3.490
i(x): 0.007 0.025 0.077 0.178 0.334 0.537 0.764 0.978 1.137 1.208
x : 3.673 3.857 4.041 4.224 4.408 4.592 4.776 4.959 5.143 5.327
i(x): 1.171 1.033 0.821 0.580 0.354 0.177 0.067 0.016 0.006 0.012
x : 5.510 5.694 5.878 6.061 6.245 6.429 6.612 6.796 6.980 7.163
i(x): 0.015 0.010 0.007 0.025 0.082 0.191 0.348 0.538 0.736 0.916
x : 7.347 7.531 7.714 7.898 8.082 8.265 8.449 8.633 8.816 9.000
i(x): 1.055 1.141 1.174 1.162 1.121 1.065 1.010 0.964 0.934 0.924
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 0.698 (1/um.)
Contrast by image min,max is: 0.993
Window contrast is: 0.983
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 0.370u, 0.200s seconds 15:30:56
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:31:50 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # EXPOSURE WITH CEM
sample> # Input File: samop4
sample> #
sample> # Optical System
sample> lambda 0.4358 ; # exposure wavelength
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> parcohdef 0 0.7 1.39 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 1.39
sample> #
sample> # Mask
sample> linespace .75 .75 ; # linespace parameters
The mask is a grating with a periodic pattern of
line/space 0.75000 0.75000 micrometers wide
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.2800 circle 0.70 1.39
A periodic mask pattern with 0.7500 um wide lines and 0.7500 um wide spaces.
Intensity window is 0.7500 um wide.
Mask edge (L/S) is located at 0.3750 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
Slope at the mask edge is: 0.975 (1/um.)
Contrast by image min,max is: 0.707
Window contrast is: 0.707
1
sample> #
sample> # Photoresist
sample> resmodel (0.4358)
sample> (0.551 0.058 0.010)
sample> (1.68 (-0.02)) (0.7133) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.55100 (1/um), B = 0.05800 (1/um), C = 0.01000 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 0.71330 micrometers.
sample> conenhmat (0.400 1)
sample> (0.4358 0.00 1.68)
sample> (12.000 0.0001 0.0640 0) ; # CEM parameters
sample> layers (4.73 -0.136)
sample> (1.47 0.0 0.0741) ; # other layers present
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.13600)
and other layers with
refractive index thickness in um.
( 1.47000, 0.00000) 0.07410
and a resist layer on top.
sample> vertrespts 300 ; # number of layers in PR and CEL
sample> #
sample> #Exposure
sample> dose 350 ;
Single exposure at the intensity of 350.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 350.0 mJ/cm**2
Contrast Enhancement Material Parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 12.0000 0.0001 0.0640
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5510 0.0580 0.0100
Wafer parameters :
Layer no. 1 is CEM, and its refractive index values,
n+ik, and vertical standing wave periods given below
are at the start of exposure.
Layer no. 2 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 0.4000 um
Layer no. 2 thickness = 0.7133 um
Layer no. 3 thickness = 0.0741 um
Wavelength: .4358 um
Vertical standing wave period in the CEM is 0.1297 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.416
Layer no. 2 index(n+ik) = 1.68 -0.021
Layer no. 3 index(n+ik) = 1.47 0.000
Substrate index(n+ik) = 4.73 -0.136
Intermediate results :
CEM has 108 vertical and 49 horizontal grid divisions
Photoresist has 192 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions in CEM is .00370 um
Thickness of vertical grid divisions in photoresist is .00372 um
Width of horizontal grid divisions is .01531 um
Exposure results :
Number of energy increments : 30
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 33.6 51.2 68.3 83.5 96.9
Wavelength .4358 um: 0.0686 0.0997 0.1591 0.2386 0.3009 0.3419
Dose (mJ/cm**2): 110.0 124.0 139.5 157.6 179.7 208.9
Wavelength .4358 um: 0.3685 0.3879 0.4045 0.4206 0.4370 0.4540
Dose (mJ/cm**2): 253.0 280.0 283.8 287.6 291.3 295.1
Wavelength .4358 um: 0.4610 0.4618 0.4626 0.4634 0.4642 0.4649
Dose (mJ/cm**2): 298.9 302.6 306.4 310.4 314.9 320.2
Wavelength .4358 um: 0.4656 0.4662 0.4669 0.4675 0.4682 0.4690
Dose (mJ/cm**2): 326.2 333.1 341.1 350.3 360.8 372.9
Wavelength .4358 um: 0.4698 0.4706 0.4716 0.4725 0.4735 0.4745
CEM Removed Before Development.
CEM Thickness Removed:
0.400 um
1
sample> #
sample> #Development
sample> optdevelop 0 1 0 ; # develop profile plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devrate 1 (5.63 7.43 -12.6) ; # resist development parameters
The development rate is given by an analytic function in M as :
rate(M) = exp(E1 + E2*M + E3*M*M)/10000 um/sec
where E1 = 5.6300, E2 = 7.4300, E3 = -12.6000
sample> devtime 75 ; # development time
Develop the resist for 75.00000 seconds.
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
E1 = 5.63 E2 = 7.43 E3 = -12.60
First development output = 75.0 sec
Time increment between profile outputs = 75.0 sec
Final development output = 75.0 sec
Maximum develop rate = 0.083325 um/sec., at M = 0.2948
Initial development run
Background develop rate(bulk) = 0.00016 um/sec
m=.75 develop rate(bulk) = 0.00613 um/sec
m=.50 develop rate(bulk) = 0.04903 um/sec
---- Developed pattern ----
time distance max depth norm thik
from mask edge
75.0 -0.0937 0.7109 0.0033
time linewidth height linewidth height slope(deg) linewidth height
min max top
75.0 0.5025 0.1295 0.9336 0.0598 -84.9 0.4329 0.5181
CD = Critical Dimension i.e. the resist line or space width.
The slope above is computed using a CDmin in the range
from 0.5686 to 0.6983 micrometers below the top
of the resist and another CDtop in the range
from 0.1297 to 0.2594 micrometers below the top of the resist.
x left = -0.3750 micrometers
x right = 0.3750 micrometers
z top = 0.0000 micrometers
z bottom = 0.7133 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 75.0 sec x = -0.0937 micrometers 85.3 degrees
The window is 0.7500 micrometers wide in x.
The edge is 0.3750 micrometers from the left side of the window.
******************************************************************************
*+ . . . 0 . . . . +*
*a aa aa aa aa aa aa aa . *
* aa . *
* a . *
* a . *
* a . *
* a . *
* a . *
* a . *
* aaa . *
*. aaa . .*
* aaaa . *
* aa . *
* aa . *
* aa . *
* a . *
* a . *
* a . *
* aa . *
* aa . *
*. a a a . .*
* aa . *
* aaa . *
* aa . *
* aa . *
* a . *
* a . *
* a . *
* aa . *
* aaa . *
*. a aa . .*
* a aa . *
* aaa . *
* aaa . *
* aa . *
* a . *
* a . *
* a . *
* aa . *
* aaa . *
*. aaa . .*
* aa aa a . *
* aaa aa *
* aaa . *
* aaa . *
* a . *
* aa . *
* a . *
* aa . *
* aa . *
*. aa a . .*
* aa aa . *
* aa a aaa a *
* a aaa aa *
* aaa . *
* aa . *
* aa . *
*. . . a . . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 57.06 lines.)
The resist has developed through to the substrate
at one or more points in the 75.0 sec output.
The approximate number of adv/um is 567.78
Output a took 405 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 40.210u, 0.400s seconds 15:32:32
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:32:46 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # INORGANIC RESIST
sample> # Input File: samop5
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> lambda 0.436 ; # lambda parameter
Single wavelength illumination at lambda = 0.43600 micrometers
sample> parcohdef 0 0.7 0 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 0.00
sample> linespace 5.0 5.0 ; # linespace parameters
The mask is a grating with a periodic pattern of
line/space 5.00000 5.00000 micrometers wide
sample> optimgexp 1 0 1 0 0 ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4360 1.0000 0.2800 circle 0.70 0.00
A periodic mask pattern with 5.0000 um wide lines and 5.0000 um wide spaces.
Intensity window is 5.0000 um wide.
Mask edge (L/S) is located at 2.5000 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4360 1.0000
Partial coherence: sigma = 0.70
Defocus by 0.00 micrometers
X window = 5.0000 micrometers in x.
The edge is 2.500 micrometers from the left window boundary.
****************************************************
*+ . . -1.3- . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . aaa *
* . a aaaaaaaa *
*+------------------------1-----------------aaaaaaa*
* . a *
* . *
*+ . +*
* . a *
* . *
*+ . +*
* . a *
* . *
*+ . +*
* . *
* . a *
*+ . +*
* . *
* . *
*+ . +*
* .a *
* . *
*+ . +*
* . *
* a *
*+ . +*
* . *
* . *
*+ a. +*
* . *
* a . *
*+ . +*
* a . *
* a . *
*aaaaaaaaaaaaaaaaaaaaa 0 . . +*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.102 0.204 0.306 0.408 0.510 0.612 0.714 0.816 0.918
i(x): 0.003 0.003 0.002 0.002 0.002 0.002 0.003 0.004 0.004 0.004
x : 1.020 1.122 1.224 1.327 1.429 1.531 1.633 1.735 1.837 1.939
i(x): 0.003 0.002 0.002 0.004 0.006 0.009 0.011 0.010 0.007 0.004
x : 2.041 2.143 2.245 2.347 2.449 2.551 2.653 2.755 2.857 2.959
i(x): 0.006 0.020 0.055 0.117 0.211 0.333 0.474 0.622 0.762 0.881
x : 3.061 3.163 3.265 3.367 3.469 3.571 3.673 3.776 3.878 3.980
i(x): 0.970 1.026 1.052 1.058 1.051 1.040 1.031 1.027 1.026 1.027
x : 4.082 4.184 4.286 4.388 4.490 4.592 4.694 4.796 4.898 5.000
i(x): 1.027 1.024 1.020 1.015 1.010 1.007 1.006 1.006 1.007 1.007
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 1.054 (1/um.)
Contrast by image min,max is: 0.997
Window contrast is: 0.994
1
sample> inorganic 1.5 0.15 10.4 1
sample> 5.0 0.5 1.3 5 ; # inorganic resist parameters
*******************************************
* 1-dimensional model of inorganic resist *
*******************************************
A = 1.5000
B = 0.1500
C = 10.4000
D = 1.0000
x-inc=0.10204
time inc=0.00500
time= 0.50500
102
silver distribution in the sensitized layer
0.995 0.995 0.994 0.994 0.993 0.991 0.990 0.987 0.984 0.980 0.975
0.969 0.961 0.952 0.940 0.925 0.908 0.887 0.862 0.833 0.798 0.757
0.711 0.658 0.600 0.539 0.476 0.415 0.358 0.307 0.263 0.226 0.196
0.172 0.154 0.139 0.128 0.120 0.113 0.108 0.104 0.101 0.099 0.097
0.096 0.096 0.095 0.095 0.095 0.095
time= 0.71000
42
silver distribution in the sensitized layer
0.985 0.985 0.984 0.982 0.980 0.976 0.972 0.967 0.960 0.952 0.942
0.930 0.916 0.899 0.880 0.857 0.831 0.801 0.767 0.728 0.685 0.636
0.582 0.524 0.463 0.400 0.339 0.282 0.230 0.186 0.149 0.119 0.095
0.077 0.063 0.052 0.044 0.037 0.033 0.029 0.026 0.024 0.022 0.021
0.020 0.019 0.019 0.018 0.018 0.018
time= 0.91500
42
silver distribution in the sensitized layer
0.966 0.966 0.964 0.961 0.957 0.951 0.944 0.935 0.925 0.912 0.898
0.881 0.862 0.839 0.814 0.786 0.754 0.719 0.681 0.638 0.592 0.542
0.488 0.431 0.373 0.316 0.261 0.211 0.167 0.131 0.101 0.078 0.060
0.046 0.036 0.028 0.022 0.017 0.014 0.011 0.009 0.008 0.006 0.006
0.005 0.004 0.004 0.004 0.004 0.004
time= 1.12000
42
silver distribution in the sensitized layer
0.938 0.937 0.934 0.930 0.925 0.917 0.908 0.896 0.883 0.867 0.849
0.829 0.806 0.781 0.753 0.721 0.687 0.651 0.611 0.568 0.522 0.473
0.422 0.369 0.315 0.263 0.215 0.171 0.134 0.103 0.079 0.059 0.045
0.034 0.026 0.019 0.015 0.011 0.009 0.007 0.005 0.004 0.003 0.002
0.002 0.002 0.001 0.001 0.001 0.001
time= 1.32500
42
silver distribution in the sensitized layer
0.901 0.901 0.898 0.893 0.886 0.877 0.866 0.853 0.838 0.820 0.801
0.779 0.754 0.727 0.697 0.665 0.631 0.594 0.554 0.513 0.469 0.422
0.374 0.325 0.276 0.229 0.185 0.147 0.114 0.087 0.066 0.049 0.037
0.028 0.021 0.015 0.012 0.009 0.007 0.005 0.004 0.003 0.002 0.002
0.001 0.001 0.001 0.001 0.001 0.001
total amount of silver before process = 50.00
total amount of silver after process= 49.95713
exposure time= 0.5049997 0.7099995 0.9149993 1.1199992 1.3249990
data is stored in the output file 7
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 1.640u, 0.160s seconds 15:32:47
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:33:06 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # SINGLE WAVELENGTH PROJECTION WITH SPLAT
sample> # Input File: samop6
sample> #
sample> lambda 0.4358 ; # lambda parameter (optional)
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture (optional)
The imaging system is
a projection type system with NA = 0.28000
sample> parcohdef 0 0.7 0.0 ; # sigma and defocus (optional)
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 0.00
sample> optimgexp 1 0 1 0 0 ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> readimage ; # read external file for image profile
This trial statement requests the optical image to be read from a data file.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 1.0000
Partial coherence: sigma = 0.70
Defocus by 0.00 micrometers
X window = 5.6568 micrometers in x.
The edge is 2.828 micrometers from the left window boundary.
****************************************************
*+ . . -1.3- . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*+------------------------1-----------------------+*
* . *
* . *
*+ . +*
* . *
* . *
*+ . aa +*
* aa . *
* a . a *
*+ a . a +*
* . *
* a . a *
*+ a . a +*
* . *
* . *
*+ a . a +*
* a . a *
* . *
*+ . +*
* a . a *
* a . *
*+ . a +*
* .a *
* a a . *
*+ a +*
* aa. a *
* a . *
*+ . a +*
* a . *
* a . a aa *
*aaaaaaaa . . 0 . aaa aaaaa*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.115 0.231 0.346 0.462 0.577 0.693 0.808 0.924 1.039
i(x): 0.005 0.006 0.007 0.007 0.007 0.007 0.007 0.013 0.030 0.067
x : 1.154 1.270 1.385 1.501 1.616 1.732 1.847 1.963 2.078 2.193
i(x): 0.132 0.228 0.351 0.488 0.618 0.721 0.774 0.769 0.706 0.599
x : 2.309 2.424 2.540 2.655 2.771 2.886 3.002 3.117 3.232 3.348
i(x): 0.469 0.341 0.236 0.170 0.153 0.187 0.266 0.380 0.512 0.641
x : 3.463 3.579 3.694 3.810 3.925 4.041 4.156 4.271 4.387 4.502
i(x): 0.742 0.795 0.786 0.717 0.597 0.452 0.305 0.180 0.090 0.038
x : 4.618 4.733 4.849 4.964 5.080 5.195 5.311 5.426 5.541 5.657
i(x): 0.016 0.012 0.016 0.019 0.018 0.016 0.013 0.011 0.010 0.010
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
sample> resmodel ((0.4358))
sample> (0.551, 0.058, 0.010)
sample> (1.68, ((-0.02))) (0.7133) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.55100 (1/um), B = 0.05800 (1/um), C = 0.01000 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 0.71330 micrometers.
sample> layers (4.73,-0.14)
sample> (1.47,0.0,0.0741) ; # layer parameters
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.14000)
and other layers with
refractive index thickness in um.
( 1.47000, 0.00000) 0.07410
and a resist layer on top.
sample> dose 150 ; # dose for exposure
Single exposure at the intensity of 150.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 150.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5510 0.0580 0.0100
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 0.7133 um
Layer no. 2 thickness = 0.0741 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.021
Layer no. 2 index(n+ik) = 1.47 0.000
Substrate index(n+ik) = 4.73 -0.140
Intermediate results :
Photoresist has 96 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00743 um
Width of horizontal grid divisions is .11545 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.9 15.8 23.8 31.7 39.6
Wavelength .4358 um: 0.3262 0.3377 0.3488 0.3594 0.3694 0.3790
Dose (mJ/cm**2): 47.5 55.4 63.8 73.3 84.3 97.0
Wavelength .4358 um: 0.3880 0.3964 0.4047 0.4136 0.4228 0.4323
Dose (mJ/cm**2): 111.5 128.2 147.5
Wavelength .4358 um: 0.4419 0.4512 0.4601
1
sample> optdevelop 0 1 0 ; # profile coordinates for plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devrate 1 (5.63, 7.43, -12.6) ; # resist development parameters
The development rate is given by an analytic function in M as :
rate(M) = exp(E1 + E2*M + E3*M*M)/10000 um/sec
where E1 = 5.6300, E2 = 7.4300, E3 = -12.6000
sample> devtime 15 75, 5 ; # development times
Develop the resist from 15.00000 to 75.00000 seconds in 5 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
E1 = 5.63 E2 = 7.43 E3 = -12.60
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 75.0 sec
Maximum develop rate = 0.083325 um/sec., at M = 0.2948
Initial development run
Background develop rate(bulk) = 0.00016 um/sec
m=.75 develop rate(bulk) = 0.00613 um/sec
m=.50 develop rate(bulk) = 0.04903 um/sec
The developer has broken through the resist in 51.4 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 2.6092 0.2744 0.6153
30.0 2.6517 0.5182 0.2735
45.0 2.5942 0.6509 0.0875
60.0 0.3911 0.7083 0.0070
75.0 1.6685 0.7128 0.0007
x left = -1.0000 micrometers
x right = 4.6568 micrometers
z top = 0.0000 micrometers
z bottom = 0.7133 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec
d 60.0 sec x = 0.3915 micrometers 77.0 degrees
e 75.0 sec x = 0.1668 micrometers 80.7 degrees
The window is 2.0000 micrometers wide in x.
The edge is 1.0000 micrometers from the left side of the window.
******************************************************************************
*d dd dd dd.dc ba . . a aa . . ab cd dd cc dd dd d*
*e ee ee ee ee ecaa aa aa abdeee ee ee ee ee e*
* eba a a ace *
* eba a a ace *
* eba ab a ace *
* eebaa abbbbbaa acee *
* eebbaa aaabb .bbaaa aabcee *
* eeb aa aa bbbbb a aa cee *
* ec a a bb. a a de *
* eb a a bb. a a ce *
*. ecb a a bbbb aa a bde .*
* edb aa aaabbb bbbaaa aaaabee *
* eedcb a aaa a bbbb . bb a a a a bbdee *
* eecb b bb bce *
* ecb bb b bde *
* ecb bc b bde *
* edc bcccbb bce *
* eecb b b bbcc cccbb bceee *
* eeecc b bc ccc .ccc bb bb ceee *
* eec b b c c b b ce *
*. edc b b c c b b ce .*
* edc b b c c b b ce *
* edc b bb cdddcc bb bb de *
* eeed c b b bb c ddd ddddccbb bb b b cdde *
* eee cd ccd dd dddccc c dee *
* ed c c d dd cc ccde *
* e c c ddd. c cde *
* ed c c d dd c cde *
* ee c cc deeeedccc cc ee *
* eeeeedc cc cc de ee .ede e c cc c eede *
*. eeedd d dd eee eeed d d deee .*
* e d dd e ee d dde *
*. . ee d . . d e e. d . de . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 60.0 sec output.
The approximate number of adv/um is 466.84
Output d took 333 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 23.330u, 0.320s seconds 15:33:31
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Mon Jul 29 21:04:59 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # GCA 6300 EXPOSURE OF KTI 820 RESIST
sample> # Reference file for comparison with scaling and phase shifting
sample> # Input file: samop7
sample> #
sample> lambda 0.4358 ; # lambda parameter
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> phasemask 1 0 1.3 0 0 1.3 1 0 1.3 ; # mask specification
This trial statement requests a complex mask type
region mag phase dist
------ --- ----- ----
1 1.00 0.0 1.30
2 0.00 0.0 1.30
3 1.00 0.0 1.30
sample> optimgexp 1 0 1 0 0 ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> vertrespts 240 ;
sample> parcohdef 0 0.7 0 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 0.00
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.2800 circle 0.70 0.00
Intensity window is 2.6000 um wide.
Mask edge (L/S) is located at 0.6500 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 1.0000
Partial coherence: sigma = 0.70
Defocus by 0.00 micrometers
X window = 2.6000 micrometers in x.
The edge is 0.650 micrometers from the left window boundary.
****************************************************
*+ -1.3- . . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
*a . a*
*+aa---------1----------------------------------aa+*
* a . a *
* . *
*+ a . a +*
* . *
* a . a *
*+ . +*
* a . a *
* . *
*+ a . a +*
* . *
* . *
*+ a . a +*
* . *
* a . a *
*+ . +*
* a . a *
* . *
*+ . +*
* a. a *
* . *
*+ a a +*
* . *
* .a a *
*+ . a a +*
* . *
* . a a *
*+ . aa aa +*
* . a a *
* . aaaaaaaaaaaa *
*+ . 0 . . . +*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.053 0.106 0.159 0.212 0.265 0.318 0.371 0.424 0.478
i(x): 1.022 1.015 0.991 0.954 0.903 0.841 0.771 0.694 0.614 0.533
x : 0.531 0.584 0.637 0.690 0.743 0.796 0.849 0.902 0.955 1.008
i(x): 0.454 0.379 0.310 0.248 0.194 0.149 0.112 0.084 0.062 0.047
x : 1.061 1.114 1.167 1.220 1.273 1.327 1.380 1.433 1.486 1.539
i(x): 0.037 0.031 0.027 0.026 0.025 0.025 0.026 0.027 0.031 0.037
x : 1.592 1.645 1.698 1.751 1.804 1.857 1.910 1.963 2.016 2.069
i(x): 0.047 0.062 0.084 0.112 0.149 0.194 0.248 0.310 0.379 0.454
x : 2.122 2.176 2.229 2.282 2.335 2.388 2.441 2.494 2.547 2.600
i(x): 0.533 0.614 0.694 0.771 0.841 0.903 0.954 0.991 1.015 1.022
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 1.237 (1/um.)
Contrast by image min,max is: 0.952
Window contrast is: 0.000
1
sample> resmodel ((0.4358))
sample> (0.51, 0.031, 0.013)
sample> (1.68, ((-0.02))) (1.1900) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.51000 (1/um), B = 0.03100 (1/um), C = 0.01300 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 1.19000 micrometers.
sample> layers (4.73,-0.14) ;
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.14000)
and a resist layer on top.
sample> dose 99 ; # dose for exposure
Single exposure at the intensity of 99.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 99.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5100 0.0310 0.0130
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 1.1900 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.019
Substrate index(n+ik) = 4.73 -0.140
Intermediate results :
Photoresist has 240 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00496 um
Width of horizontal grid divisions is .05306 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.5 15.0 22.5 30.0 37.6
Wavelength .4358 um: 0.1752 0.1854 0.1956 0.2057 0.2157 0.2255
Dose (mJ/cm**2): 45.1 52.6 60.5 69.5 80.0 92.0
Wavelength .4358 um: 0.2349 0.2439 0.2529 0.2625 0.2727 0.2831
Dose (mJ/cm**2): 105.8 119.9 134.0
Wavelength .4358 um: 0.2935 0.3024 0.3098
1
sample> optdevelop 0 1 0 ; # profile coordinates for plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devrate 2 (.1143,.001683, 4.667)
sample> (.10 .45 .3) ; # resist development parameters
The development rate is given by an analytic function in M and z as:
Rate(M,z) = f(M,z)*Rb(M)
Where Rb(M) is bulk rate,
f(M,z) is rate-retardation factor near surface
Rb(M) = 1.0/((1.0-M*exp(-R3*(1.0-M)))/R1 + M*exp(-R3*(1.0-M))/R2) um/sec
Where R1 = 0.11430 um/sec, R2 = 0.00168 um/sec, R3 = 4.67
f(M,z) = 1-(1-(R5-(R5-R6)*M))*exp(-z/R4),
Where R4 = 0.10000 um, R5 = 0.45000, R6 = 0.30000
sample> devtime 15, 60, 4 ; # development times
Develop the resist from 15.00000 to 60.00000 seconds in 4 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
The first 3, 6, 8, or 10 parameters are used if all parameters
must be positive and R5 to R10 must not be greater than one.
R1 = 0.1143 um/sec R2 = 0.0017 um/sec R3 = 4.67
R4 = 0.1000 um R5 = 0.4500 R6 = 0.3000
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 60.0 sec
Maximum develop rate = 0.114300 um/sec., at M = 0.0000
Initial development run
Background develop rate(bulk) = 0.00168 um/sec
m=.75 develop rate(bulk) = 0.00687 um/sec
m=.50 develop rate(bulk) = 0.02693 um/sec
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 1.9500 0.4141 0.6520
30.0 1.9500 0.8073 0.3216
45.0 1.9500 1.1206 0.0583
60.0 1.4375 1.1872 0.0023
x left = -0.6500 micrometers
x right = 1.9500 micrometers
z top = 0.0000 micrometers
z bottom = 1.1900 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec
d 60.0 sec x = -0.1565 micrometers -66.7 degrees
The window is 2.6000 micrometers wide in x.
The edge is 0.6500 micrometers from the left side of the window.
******************************************************************************
*+ . 0. aa a aa.aa aa aa aa aa aa a.aa . . +*
* aaa.abbb cc cd dd dd dd dd dd dc cc bbba aaa *
* a . b ccdddd ddddcc b a *
* aa . b ccd dcc b aa *
* aaaa bbbccd dccbbb aaaa *
* aa .bb ccd dcc bb aa *
* aa . b cdd ddc b aa *
* aaa .bbccdd dcccbbb aaaa *
* aaaa bbb ccdd ddcc bbb aaaa *
* a .b c d d c b aa *
*. aa .b c d d c b aa .*
*a a a aa bbb ccdd ddcc bbb aaa a aa*
* bb cc dd d cc bbb *
* b ccdd ddcc bb *
* bbb. ccdd ddcc bbb *
* bb .ccdd ddcc bb *
* b . c d d c b *
* bb . c dd dd c bb *
* bbbbb ccc dd dddccc bbb bb *
* bb cc dd dd cc bb *
*. b .c d d c b .*
* bbbb ccccddd dddcccc bbbbbb *
*b b b ccc.dd dd cc bb b*
* c. d d c *
* cc. dd dd cc *
* ccccc dddd dddcccccc *
* cc dd dd ccc *
* c .dd dd c *
* ccccc ddd ddd ccccc *
* cccc c ddd. ddd c ccccc *
*ccc d. d ccc*
* dd. dd *
*. . dd .. . . . ddd . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 60.0 sec output.
The approximate number of adv/um is 279.83
Output d took 333 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 48.590u, 0.880s seconds 21:05:55
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Mon Jul 29 21:07:05 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # GCA 6300 EXPOSURE OF KTI 820 RESIST WITH SCALING
sample> # Reference file for comparison with scaling and phase shifting
sample> # Input file: samop8
sample> #
sample> lambda 0.4358 ; # lambda parameter
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> phasemask 1 0 0.81 0 0 0.81 1 0 0.81 ; # mask parameters
This trial statement requests a complex mask type
region mag phase dist
------ --- ----- ----
1 1.00 0.0 0.81
2 0.00 0.0 0.81
3 1.00 0.0 0.81
sample> optimgexp 1 0 1 0 0 ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> vertrespts 240 ;
sample> parcohdef 0 0.7 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 1.00
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.2800 circle 0.70 1.00
Intensity window is 1.6200 um wide.
Mask edge (L/S) is located at 0.4050 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 1.0000
Partial coherence: sigma = 0.70
Defocus by 1.00 micrometers
X window = 1.6200 micrometers in x.
The edge is 0.405 micrometers from the left window boundary.
****************************************************
*+ -1.3- . . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*+-----------1------------------------------------+*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
*aaa . aaa*
*+ aa . aa +*
* a . a *
* aa . aa *
*+ a . a +*
* a . a *
* a . a *
*+ a. a +*
* . *
* a a *
*+ .a a +*
* . a a *
* . a a *
*+ . a a +*
* . aa aa *
* . a a *
*+ . aa aa +*
* . aaaaaa *
* . *
*+ . 0 . . . +*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.033 0.066 0.099 0.132 0.165 0.198 0.231 0.264 0.298
i(x): 0.628 0.626 0.619 0.607 0.590 0.570 0.545 0.518 0.487 0.454
x : 0.331 0.364 0.397 0.430 0.463 0.496 0.529 0.562 0.595 0.628
i(x): 0.420 0.384 0.348 0.312 0.277 0.243 0.210 0.180 0.153 0.129
x : 0.661 0.694 0.727 0.760 0.793 0.827 0.860 0.893 0.926 0.959
i(x): 0.108 0.091 0.079 0.070 0.066 0.066 0.070 0.079 0.091 0.108
x : 0.992 1.025 1.058 1.091 1.124 1.157 1.190 1.223 1.256 1.289
i(x): 0.129 0.153 0.180 0.210 0.243 0.277 0.312 0.348 0.384 0.420
x : 1.322 1.356 1.389 1.422 1.455 1.488 1.521 1.554 1.587 1.620
i(x): 0.454 0.487 0.518 0.545 0.570 0.590 0.607 0.619 0.626 0.628
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 1.091 (1/um.)
Contrast by image min,max is: 0.811
Window contrast is: 0.000
1
sample> resmodel ((0.4358))
sample> (0.51, 0.031, 0.013)
sample> (1.68, ((-0.02))) (1.1900) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.51000 (1/um), B = 0.03100 (1/um), C = 0.01300 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 1.19000 micrometers.
sample> layers (4.73,-0.14) ;
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.14000)
and a resist layer on top.
sample> dose 99 ; # dose for exposure
Single exposure at the intensity of 99.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 99.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5100 0.0310 0.0130
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 1.1900 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.019
Substrate index(n+ik) = 4.73 -0.140
Intermediate results :
Photoresist has 240 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00496 um
Width of horizontal grid divisions is .03306 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.5 15.0 22.5 30.0 37.6
Wavelength .4358 um: 0.1752 0.1854 0.1956 0.2057 0.2157 0.2255
Dose (mJ/cm**2): 45.1 52.6 60.5 69.5 80.0 92.0
Wavelength .4358 um: 0.2349 0.2439 0.2529 0.2625 0.2727 0.2831
Dose (mJ/cm**2): 105.8 119.9 134.0
Wavelength .4358 um: 0.2935 0.3024 0.3098
1
sample> optdevelop 0 1 0 ; # profile coordinates for plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devrate 2 (.1143,.001683, 4.667)
sample> (.10 .45 .3) ; # resist development parameters
The development rate is given by an analytic function in M and z as:
Rate(M,z) = f(M,z)*Rb(M)
Where Rb(M) is bulk rate,
f(M,z) is rate-retardation factor near surface
Rb(M) = 1.0/((1.0-M*exp(-R3*(1.0-M)))/R1 + M*exp(-R3*(1.0-M))/R2) um/sec
Where R1 = 0.11430 um/sec, R2 = 0.00168 um/sec, R3 = 4.67
f(M,z) = 1-(1-(R5-(R5-R6)*M))*exp(-z/R4),
Where R4 = 0.10000 um, R5 = 0.45000, R6 = 0.30000
sample> devtime 15, 60, 4 ; # development times
Develop the resist from 15.00000 to 60.00000 seconds in 4 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
The first 3, 6, 8, or 10 parameters are used if all parameters
must be positive and R5 to R10 must not be greater than one.
R1 = 0.1143 um/sec R2 = 0.0017 um/sec R3 = 4.67
R4 = 0.1000 um R5 = 0.4500 R6 = 0.3000
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 60.0 sec
Maximum develop rate = 0.114300 um/sec., at M = 0.0000
Initial development run
Background develop rate(bulk) = 0.00168 um/sec
m=.75 develop rate(bulk) = 0.00687 um/sec
m=.50 develop rate(bulk) = 0.02693 um/sec
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 1.2150 0.1583 0.8670
30.0 1.2150 0.4132 0.6527
45.0 1.2150 0.6534 0.4509
60.0 1.2150 0.8086 0.3205
x left = -0.4050 micrometers
x right = 1.2150 micrometers
z top = 0.0000 micrometers
z bottom = 1.1900 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec
d 60.0 sec
The window is 1.6200 micrometers wide in x.
The edge is 0.4050 micrometers from the left side of the window.
******************************************************************************
*+ . 0. . a aa aa aa a . . . +*
* aa.aa a aa bb bb bb bb bb bb bb aa a aa aa *
* aa . bbbb c cc cd dd dc cc c bbbb aa *
* aa . bb c dddd dddd c bb a *
* aa . bb cc d d cc bb aa *
* a aaa . bbb cc dd dd ccc bbb aaa a *
*a a a a bbb cc dd dd cc bbb aa a a a*
* bb cc dd dd cc bb *
* .b c d d c b *
* bb cc d d cc bb *
*. bbbbb ccc dd dd cc bbbb .*
* bbbb . cc dd dd cc bbbbb *
* b . cc dd dd cc b *
* b . c d d c bb *
* bb . cc dd d cc bb *
*b bb b bbb .ccc ddd dd cccc bb bbbb b*
* ccc ddd ddd ccc *
* c d d cc *
* c d d c *
* ccc ddd ddd ccc *
*. c c ccc . dddd dddd ccccc .*
* cccc .ddd ddd cccc *
* cc . d d cc *
* cc . d d cc *
*c cccc .ddd ddd c c c*
* dddddd dddddd *
* dd . dd *
* d . d *
* d . d *
* ddddd . dddd d *
*d d dd d . d dd d d*
* . *
* . *
* . *
* . *
* . *
* . *
* . *
* . *
* . *
*. . .*
* . *
* . *
* . *
*. . .. . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 44.07 lines.)
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 9.950u, 0.340s seconds 21:07:15
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Mon Jul 29 21:08:45 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # GCA 6300 EXPOSURE OF KTI 820 RESIST WITH SCALING AND PHASE SHIFTING MASK:
sample> # LEVINSON TYPE
sample> # Input file: samop9
sample> #
sample> lambda 0.4358 ; # lambda parameter
Single wavelength illumination at lambda = 0.43580 micrometers
sample> proj 0.28 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.28000
sample> phasemask 1 0 0.81 0 0 0.81 1 180 0.81 ; # mask parameters
This trial statement requests a complex mask type
region mag phase dist
------ --- ----- ----
1 1.00 0.0 0.81
2 0.00 0.0 0.81
3 1.00 180.0 0.81
sample> optimgexp 1 0 1 0 0 ; # profile coordinates for plot
this trial-stmt sets the flags
imgfl(1)= 1, imgfl(2)= 0, imgfl(3)= 1
iexpfl(1)= 0, iexpfl(2)= 0
sample> vertrespts 240 ;
sample> parcohdef 0 0.7 0 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.70
defocus= 0.00
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.4358 1.0000 0.2800 circle 0.70 0.00
Intensity window is 1.6200 um wide.
Mask edge (L/S) is located at 0.4050 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
--- Image Intensity Pattern ---
Symbol Wavelength Relative intensity
(micrometers)
a 0.4358 1.0000
Partial coherence: sigma = 0.70
Defocus by 0.00 micrometers
X window = 1.6200 micrometers in x.
The edge is 0.405 micrometers from the left window boundary.
****************************************************
*+ -1.3- . . . +*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*+-----------1------------------------------------+*
* . *
* . *
*+ . +*
* . *
* . *
*+ . +*
* . *
* . *
*aaa . aaa*
* aa . aa *
* a . a *
*+ a . a +*
* a . a *
* a . a *
*+ a . a +*
* a . a *
* . *
*+ a. a +*
* a a *
* .a a *
*+ . +*
* . a a *
* . a a *
*+ . a a +*
* . a a *
* . a a *
*+ . a a +*
* . aa aa *
* . aaaaaa *
*+ . 0 . . . +*
****************************************************
Intensity vs X values for the composite pattern-- 50 points
x : 0.000 0.033 0.066 0.099 0.132 0.165 0.198 0.231 0.264 0.298
i(x): 0.709 0.706 0.697 0.683 0.663 0.638 0.608 0.575 0.538 0.498
x : 0.331 0.364 0.397 0.430 0.463 0.496 0.529 0.562 0.595 0.628
i(x): 0.456 0.413 0.369 0.326 0.283 0.242 0.203 0.167 0.134 0.105
x : 0.661 0.694 0.727 0.760 0.793 0.827 0.860 0.893 0.926 0.959
i(x): 0.081 0.060 0.045 0.035 0.029 0.029 0.035 0.045 0.060 0.081
x : 0.992 1.025 1.058 1.091 1.124 1.157 1.190 1.223 1.256 1.289
i(x): 0.105 0.134 0.167 0.203 0.242 0.283 0.326 0.369 0.413 0.456
x : 1.322 1.356 1.389 1.422 1.455 1.488 1.521 1.554 1.587 1.620
i(x): 0.498 0.538 0.575 0.608 0.638 0.663 0.683 0.697 0.706 0.709
---------- system message(image) ----------
Profile coordinates are put in the plot-data file
Slope at the mask edge is: 1.317 (1/um.)
Contrast by image min,max is: 0.921
Window contrast is: 0.000
1
sample> resmodel ((0.4358))
sample> (0.51, 0.031, 0.013)
sample> (1.68, ((-0.02))) (1.1900) ; # resist exposure parameters
At lambda = 0.43580 micrometers the resist ABC parameters are
A = 0.51000 (1/um), B = 0.03100 (1/um), C = 0.01300 (sq.cm)/mJ
the unexposed refractive index is ( 1.68000, -0.02000) and
the thickness is 1.19000 micrometers.
sample> layers (4.73,-0.14) ;
The wafer has the following layers -
a substrate with refractive index of ( 4.73000, -0.14000)
and a resist layer on top.
sample> dose 99 ; # dose for exposure
Single exposure at the intensity of 99.00000 millijoules per sq. centimeter
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 99.0 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.4358 0.5100 0.0310 0.0130
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 1.1900 um
Wavelength: .4358 um
Vertical standing wave period in the photoresist is 0.1297 um
Layer no. 1 index(n+ik) = 1.68 -0.019
Substrate index(n+ik) = 4.73 -0.140
Intermediate results :
Photoresist has 240 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00496 um
Width of horizontal grid divisions is .03306 um
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 7.5 15.0 22.5 30.0 37.6
Wavelength .4358 um: 0.1752 0.1854 0.1956 0.2057 0.2157 0.2255
Dose (mJ/cm**2): 45.1 52.6 60.5 69.5 80.0 92.0
Wavelength .4358 um: 0.2349 0.2439 0.2529 0.2625 0.2727 0.2831
Dose (mJ/cm**2): 105.8 119.9 134.0
Wavelength .4358 um: 0.2935 0.3024 0.3098
1
sample> optdevelop 0 1 0 ; # profile coordinates for plot
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 0
sample> devrate 2 (.1143,.001683, 4.667)
sample> (.10 .45 .3) ; # resist development parameters
The development rate is given by an analytic function in M and z as:
Rate(M,z) = f(M,z)*Rb(M)
Where Rb(M) is bulk rate,
f(M,z) is rate-retardation factor near surface
Rb(M) = 1.0/((1.0-M*exp(-R3*(1.0-M)))/R1 + M*exp(-R3*(1.0-M))/R2) um/sec
Where R1 = 0.11430 um/sec, R2 = 0.00168 um/sec, R3 = 4.67
f(M,z) = 1-(1-(R5-(R5-R6)*M))*exp(-z/R4),
Where R4 = 0.10000 um, R5 = 0.45000, R6 = 0.30000
sample> devtime 15, 60, 4 ; # development times
Develop the resist from 15.00000 to 60.00000 seconds in 4 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
Parameter values :
The first 3, 6, 8, or 10 parameters are used if all parameters
must be positive and R5 to R10 must not be greater than one.
R1 = 0.1143 um/sec R2 = 0.0017 um/sec R3 = 4.67
R4 = 0.1000 um R5 = 0.4500 R6 = 0.3000
First development output = 15.0 sec
Time increment between profile outputs = 15.0 sec
Final development output = 60.0 sec
Maximum develop rate = 0.114300 um/sec., at M = 0.0000
Initial development run
Background develop rate(bulk) = 0.00168 um/sec
m=.75 develop rate(bulk) = 0.00687 um/sec
m=.50 develop rate(bulk) = 0.02693 um/sec
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 1.2150 0.1937 0.8373
30.0 1.2150 0.5209 0.5623
45.0 1.2150 0.7270 0.3890
60.0 1.2150 0.9346 0.2146
x left = -0.4050 micrometers
x right = 1.2150 micrometers
z top = 0.0000 micrometers
z bottom = 1.1900 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec
d 60.0 sec
The window is 1.6200 micrometers wide in x.
The edge is 0.4050 micrometers from the left side of the window.
******************************************************************************
*+ . 0. .aa aa aa aa aa . . . +*
* aa aa ab bb bc cc cc cc cb bb ba aa aa *
* aa . bb cc cd dd dd dd dc cc bb aa *
* a . bb c dd dd c bb a *
* aa . bb c d d c bb a *
* aaaa . bbb cc dd dd cc bbb aaaa *
* a aaaa .bbb cccdd dd cc bbb aa a a *
*a a a . bb cc d d c bb aaa a*
* . b c d d c b *
* . bb cc d d cc bb *
*. bbbb cc dd d ccc bbbb .*
* bbb. cc dd dd cc bbb *
* bb cc d d cc bbb *
* b c d d c b *
* bb. cc d dd cc bb *
* b bbbbb . cccc dd dd ccc bb bbb *
* bbbb . cc dd dd ccc bbbb *
* b . c dd d c b *
* bb . c d d c bb *
*b bbbb . ccc dd dd cc bb bb*
*. ccc c ddd ddd ccccc .*
* ccc. ddd ddd ccc *
* c. dd dd c *
* c. dd dd c *
* cccc . ddd ddd ccc *
* c cc c .dddd dddd cc c c c *
* ccccc . dd ddd ccc *
*cc . d d cc*
* . dd dd *
* dddd dddd *
*. ddddd . ddddd .*
* ddd . dd *
* d . d *
* dd . dd *
* dd d d d . ddd d dd *
*d d . d dd*
* . *
* . *
* . *
* . *
*. . .*
* . *
* . *
* . *
*. . .. . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 44.07 lines.)
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 17.430u, 0.280s seconds 21:09:02
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:34:23 1991
1----------------------------------------------------------------------------8
sample> # OPTICAL LITHOGRAPHY EXAMPLE
sample> # SINGLE WAVELENGTH PROJECTION LITHOGRAPHY ON SHIPLEY SNR 248 RESIST
sample> # Input File: samop10
sample> lambda 0.248 ; # exposure wavelength
Single wavelength illumination at lambda = 0.24800 micrometers
sample> proj 0.42 ; # numerical aperture
The imaging system is
a projection type system with NA = 0.42000
sample> linespace 0.4 0.4 ; # mask definition
The mask is a grating with a periodic pattern of
line/space 0.40000 0.40000 micrometers wide
sample> parcohdef 0 0.5 0.0 ; # sigma and defocus
this trial 20 statement requests partial coherence
sigma = 0.50
defocus= 0.00
sample> vertrespts 200 ; # number of vertical grid divisions
sample> horwindow 0.8 0.2 ; # specify output window
The window is 0.8 micrometers wide
The mask edge is 0.2 micrometers from the left edge of the window
sample> imagerun ; # run image machine
Run the imaging subsystem to get
the normalized horizontal energy distribution
in the image of the mask resulting from
a uniform illumination on the mask with a
total of 1.0 mJ/cm2
***************
* Run image *
***************
Image parameter values:
Wavelength Relative Numerical Aperture Filling Defocus
(micrometers) intensity aperture shape factor (micrometers)
0.2480 1.0000 0.4200 circle 0.50 0.00
A periodic mask pattern with 0.4000 um wide lines and 0.4000 um wide spaces.
Intensity window is 0.8000 um wide.
Mask edge (L/S) is located at 0.2000 um from the left window boundary.
Parco2 used for partial coherent intensity computation.
Slope at the mask edge is: 3.757 (1/um.)
Contrast by image min,max is: 0.952
Window contrast is: 0.000
1
sample> resmodel (0.248)
sample> (-0.712 1.157 0.00229)
sample> (1.79, ((-0.02))) (1.00) ; # resist exposure parameters
At lambda = 0.24800 micrometers the resist ABC parameters are
A = -0.71200 (1/um), B = 1.15700 (1/um), C = 0.00229 (sq.cm)/mJ
the unexposed refractive index is ( 1.79000, -0.02000) and
the thickness is 1.00000 micrometers.
sample> dose 25.2 ; # exposure dose
Single exposure at the intensity of 25.20000 millijoules per sq. centimeter
sample> shipleyahr 140 60 ; # resist bake parameters
Shipley acid hardening resist specified with:
Bake temperature = 140.0 degrees C and
Bake time = 60.0 seconds
sample> layers (1.70,-3.38) ; # silicon substrate
The wafer has the following layers -
a substrate with refractive index of ( 1.70000, -3.38000)
and a resist layer on top.
sample> exposerun ; # run exposure machine
Find out the actual bleaching in the resist
****************
* Run Expose *
****************
Exposure parameters :
Dose = 25.2 mJ/cm**2
Resist parameters :
Wavelength um A 1/um B 1/um C cm**2/mJ
.2480 -.7120 1.1570 0.0023
Wafer parameters :
Layer no. 1 is photoresist, and its extinction coefficient
values, k, given below are at the start of exposure.
Layer no. 1 thickness = 1.0000 um
Wavelength: .2480 um
Vertical standing wave period in the photoresist is 0.0693 um
Layer no. 1 index(n+ik) = 1.79 -0.009
Substrate index(n+ik) = 1.70 -3.380
Intermediate results :
Photoresist has 200 vertical and 49 horizontal grid divisions
Thickness of vertical grid divisions is .00500 um
Width of horizontal grid divisions is .01633 um
1
*************
* Diffusion *
*************
Sigma of diffusion = 0.08000 micrometers.
Jmax = 202 jsig = 49
Hence jlim = 50
Delz = 0.0050 micrometers.
Weights-sum4quad = 0.99999 (ideally this should be 1).
The 1d impulse response is :
0.03525 0.03511 0.03470 0.03403 0.03312 0.03197 0.03063 0.02911 0.02746 0.02569
0.02386 0.02198 0.02009 0.01822 0.01640 0.01465 0.01298 0.01141 0.00995 0.00861
0.00740 0.00630 0.00533 0.00447 0.00372 0.00307 0.00252 0.00205 0.00165 0.00132
0.00105 0.00083 0.00065 0.00050 0.00039 0.00030 0.00022 0.00017 0.00013 0.00009
0.00007 0.00005 0.00004 0.00003 0.00002 0.00001 0.00001 0.00001 0.00000 0.00000
Exposure results :
Number of energy increments : 15
Overall fractional power reflected
Dose (mJ/cm**2): 0.0 3.6 7.2 10.8 14.4 18.0
Wavelength .2480 um: 0.0599 0.0575 0.0553 0.0531 0.0512 0.0493
Dose (mJ/cm**2): 21.6 25.2 28.8 32.4 36.0 39.6
Wavelength .2480 um: 0.0475 0.0459 0.0443 0.0428 0.0414 0.0401
Dose (mJ/cm**2): 43.2 46.8 50.4
Wavelength .2480 um: 0.0389 0.0377 0.0366
1
sample> devrate 4 (6.5 .0350 6.3) ; # resist development parameters
The development rate is given by an analytic function in C as :
rate(C) = R0 * (1 - CE/C0) ** alpha
where CE = 15C**2 - 20C**3 + 15C**4 - 6C**5 + C**6
and alpha = 6.5000, R0 = 0.0350, C0 = 6.3000
C determined from M, bake temperature and bake time.
sample> devtime 30,120,4 ; # development time
Develop the resist from 30.00000 to 120.00000 seconds in 4 steps
sample> developrun ; # run development machine
Find the developed profiles of the photoresist
*****************
* Run develop *
*****************
First development output = 30.0 sec
Time increment between profile outputs = 30.0 sec
Final development output = 120.0 sec
Maximum develop rate = 0.035000 um/sec., at M = 0.0000
Initial development run
The developer has broken through the resist in 33.3 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
30.0 -0.1710 0.9945 0.0055
60.0 0.0135 0.9937 0.0063
90.0 0.0285 0.9944 0.0056
120.0 0.0376 0.9948 0.0052
time linewidth height linewidth height slope(deg) linewidth height
min max top
60.0 0.4288 0.0192 0.4418 0.0787 -90.0 0.4262 0.9263
90.0 0.4585 0.0179 0.4744 0.0833 -89.5 0.4422 0.9269
120.0 0.4769 0.0171 0.4952 0.0822 -89.3 0.4534 0.9274
CD = Critical Dimension i.e. the resist line or space width.
The slope above is computed using a CDmin in the range
from 0.9157 to 0.9850 micrometers below the top
of the resist and another CDtop in the range
from 0.0693 to 0.1385 micrometers below the top of the resist.
x left = -0.2000 micrometers
x right = 0.6000 micrometers
z top = 0.0000 micrometers
z bottom = 1.0000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 30.0 sec
b 60.0 sec x = 0.0132 micrometers 40.5 degrees
c 90.0 sec x = 0.0283 micrometers 46.7 degrees
d 120.0 sec x = 0.0374 micrometers 49.5 degrees
The window is 0.8000 micrometers wide in x.
The edge is 0.2000 micrometers from the left side of the window.
******************************************************************************
*+ . 0.abcbdd dd.dd dd dd dd dd dd ddbcba . . +*
* abddd dddba *
* acd dca *
* acd dca *
* abd dba *
* abd dba *
* abd dba *
* abd dba *
* abdd ddba *
* abcd dcba *
*. abcd dcba .*
* abcd dcba *
* abcd dcba *
* abcd dcba *
* abcd dcba *
* abcd dcba *
* abcd dcba *
* abcd dcba *
* abcd dcba *
* abcd dcba *
*. a cd dc a .*
* a cd dc a *
* a cd dc a *
* a cd dc a *
* a bd db a *
* a bd db a *
* a bd db a *
* a bd db a *
* a bd db a *
* a bd db a *
*. a bd db a .*
* a bd db a *
* a bdd db a *
* a bcd dcb a *
* a bcd dcb a *
* a bcd dcb a *
* a bcd dcb a *
* a bcd dcb a *
* a bcd dcb a *
* a bcd dcb a *
*. a bcd dcb a .*
* aa bcd dcb aa *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
*. a. bcd dcb a .*
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a. bcd dcb a *
* a . bcd dcb a *
* a . bcd dcb a *
* a . bcd dcb a *
*. a . bcd dcb a .*
* a . bcd dcb a *
* a . b d ddcb a *
* a . b cd dc b a *
* a . b cd dc b a *
* a . bcdd ddcb a *
* aa . bcd dcb a *
* a . bcd dcb a *
* aa . bcd dcb a *
* a . bcd dcb a *
*. aa . bcd dcb aa .*
* a .b cd dc b aa *
* aa .b cd dc b aa *
* aa .b d d b a a *
* a aa .bcd dcb aa *
*a a . .bcd . . . dcb . . aa a*
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 75.00 lines.)
The resist has developed through to the substrate
at one or more points in the 60.0 sec output.
The approximate number of adv/um is 51.00
Output b took 51 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 29.700u, 0.410s seconds 15:34:55
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:09:27 1991
1----------------------------------------------------------------------------8
sample> # ELECTRON BEAM LITHOGRAPHY EXAMPLE
sample> # ELECTRON BEAM (DEFAULTS)
sample> # Input File: sameb0
sample> eblprint 0 0 0 0 1 ; # print out e-beam information
sample> eblrate 1.0 1.0 199.0 2.0 ; # set rate equation constants
sample> eblpatsq 1.0 0.25 ; # rectangular beam
sample> eblpline 3.0 2.0 1 1 1 ; # periodic line pattern
---------- System Message (E-Beam) ----------
Periodic line shift specified
sample> eblwind 2.0 1.0 ; # window size, symmetric
sample> eblcnvlv 80.0 ; # set dose, run convolution
*********************
* e-resist exposure *
*********************
Distribution of absorbed energy in the resist from a delta source
is to be read in from the Monte Carlo data file mcdat
Resist thickness = 1.0000 micrometers
Beam energy = 20.000 Kev
Cell size = 0.0250 micrometers in x
Cell size = 0.0250 micrometers in z
Emat has 40 rows and 200 columns
Etem2 has 399 columns
Emlt has 599 columns
Elin has 42 rows and 802 columns
Dose = 80.00 uC/cm**2
Square Beam------fwhm = 1.0000 micrometers
edge width = 0.2500 micrometers
3 Lines written
Line # 1 Shift distance = 0.0000 um, Weight = 1.0000
Line # 2 Shift distance = 2.0000 um, Weight = 1.0000
Line # 3 Shift distance = 4.0000 um, Weight = 1.0000
-------- Line # 1 --------
Line starts -2.0000 micrometers from window edge
-------- Line # 2 --------
Line starts 0.0000 micrometers from window edge
-------- Line # 3 --------
Line starts 2.0000 micrometers from window edge
sample> eblstrpts 50 1.0 ; # string pts, anrate fraction
sample> devtime 40 160 4 ; # development time
Develop the resist from 40.00000 to 160.00000 seconds in 4 steps
sample> ebldevelop ; # run development
************************
* e-resist development *
************************
Symmetric Development
Rate equation coefficients:
R1 = 1.0000 Cm = 1.0000 D0 = 199 alpha = 2.0000
Aniso.rate fraction = 1.00000
Dev time for first output = 40.0 seconds
Dev time for final output = 160.0 seconds
Time between intermediate dev = 40.0 seconds
The developer has broken through the resist in 100.0 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
40.0 -0.9585 0.3402 0.6598
80.0 -0.9545 0.7624 0.2376
120.0 -0.4843 0.9825 0.0175
160.0 -0.3012 0.9704 0.0296
x left = -1.0000 micrometers
x right = 1.0000 micrometers
z top = 0.0000 micrometers
z bottom = 1.0000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 40.0 sec
b 80.0 sec
c 120.0 sec x = -0.4948 micrometers -11.8 degrees
d 160.0 sec x = -0.3036 micrometers 87.1 degrees
The window is 2.0000 micrometers wide in x.
The edge is 1.0000 micrometers from the left side of the window.
******************************************************************************
*+ . . . 0 . . . . +*
* a aa aa aa aa aa aa aa aa aa a *
* a bb bc cc cc cc cc cc cc bb aa *
* aa b c dd dd dd dd dd dd dd c c a *
* a bccdd . ddcbb a *
* b c . dc b *
* a b c d . dc b a *
* a b c d . dc b a *
* aa b c d . dc b a *
* a b c d . dc b a *
*. a b c d . dc b a a a a aa aa*
*a aa aa a a b c d . d c b *
* b c . d c b *
* b c d . d c b *
* b c d . d c b *
* b d . d b *
* b c d . d c b *
* b c d . d c *
* b c d . d c b *
* b c d . d c b *
*. b c d . d c b .*
* b c d . d c b b *
* b c d . d c b b b bbb*
* b c d . d *
*b bb b b b c d . d c *
* c . d c *
* c dd . d c *
* c d . d c *
* c . c *
* c d . d c *
*. c d . d cc .*
* cc d . d c *
*. . . . . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 120.0 sec output.
The approximate number of adv/um is 90.00
Output c took 90 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 11.070u, 0.270s seconds 15:09:39
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:09:53 1991
1----------------------------------------------------------------------------8
sample> # ELECTRON BEAM LITHOGRAPHY EXAMPLE
sample> # SQUARE BEAMS
sample> # Input File: sameb1
sample> eblith ; # initialize default parameters
---------- System Message (E-Beam) ----------
E-beam default values initialized
sample> eblpatsq 0.75 0.25 ; # specify line
sample> eblpline 3 1.5 1 1 1 ; # specify array of lines
---------- System Message (E-Beam) ----------
Periodic line shift specified
sample> eblwind 4.5 0 0.75 ; # convolution and development window
sample> eblcnvlv 80.0 ; # set dose and run convolution
*********************
* e-resist exposure *
*********************
Distribution of absorbed energy in the resist from a delta source
is to be read in from the Monte Carlo data file mcdat
Resist thickness = 1.0000 micrometers
Beam energy = 20.000 Kev
Cell size = 0.0250 micrometers in x
Cell size = 0.0250 micrometers in z
Emat has 40 rows and 200 columns
Etem2 has 399 columns
Emlt has 599 columns
Elin has 42 rows and 802 columns
Dose = 80.00 uC/cm**2
Square Beam------fwhm = 0.7500 micrometers
edge width = 0.2500 micrometers
3 Lines written
Line # 1 Shift distance = 0.0000 um, Weight = 1.0000
Line # 2 Shift distance = 1.5000 um, Weight = 1.0000
Line # 3 Shift distance = 3.0000 um, Weight = 1.0000
-------- Line # 1 --------
Line starts 0.7500 micrometers from window edge
-------- Line # 2 --------
Line starts 2.2500 micrometers from window edge
-------- Line # 3 --------
Line starts 3.7500 micrometers from window edge
sample> optdevelop 0 1 1 ; # set printing options
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 1
sample> eblengpts 1 1 19 ; # print pts for energy contours
---------- System Message (E-Beam) ----------
Energy profile points are put in file engpts.
First depth = 1 Skip depth = 19
sample> eblstrpts 150 ; # set number of string points
sample> devtime 0 140 8 ; # set development times
Develop the resist from 0.00000 to 140.00000 seconds in 8 steps
sample> ebldevelop ; # develop
************************
* e-resist development *
************************
Rate equation coefficients:
R1 = 1.0000 Cm = 1.0000 D0 = 199 alpha = 2.0000
Aniso.rate fraction = 1.00000
Dev time for first output = 0.0 seconds
Dev time for final output = 140.0 seconds
Time between intermediate dev = 20.0 seconds
The developer has broken through the resist in 108.0 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
0.0 -2.2500 0.0000 1.0000
20.0 0.0109 0.1512 0.8488
40.0 0.0112 0.3198 0.6802
60.0 -0.0121 0.5043 0.4957
80.0 0.0148 0.7119 0.2881
100.0 -0.0011 0.9253 0.0747
120.0 0.3226 0.9986 0.0014
140.0 0.4573 0.9919 0.0081
x left = -2.2500 micrometers
x right = 2.2500 micrometers
z top = 0.0000 micrometers
z bottom = 1.0000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 0.0 sec
b 20.0 sec
c 40.0 sec
d 60.0 sec
e 80.0 sec
f 100.0 sec
g 120.0 sec x = -1.6243 micrometers 6.6 degrees
h 140.0 sec x = -1.8487 micrometers 5.9 degrees
The window is 4.5000 micrometers wide in x.
The edge is 2.2500 micrometers from the left side of the window.
******************************************************************************
*ccccbaaaaaaaaaaaaaaaabbbbbbbbbaaaaaaaaaaaaaaaabbbbbbbbbaaaaaaaaaaaaaaaabcccc*
*hggfdcb bcdeeeeeeedbb . bbdeeeeeeedcb bcdfggh*
* hhhgdbb bbcfhhhhhhgecbb . bbcfghhhhhhfdbb bbdfhhh *
* hecbb bcdgh hhgdcb . b dghh hhecb bbcfh *
* hfc bbbb bbb ceh hec bb . bb ceh hec bbb bbbb cfh *
* hfdc bbbbb cceh hec bbbbbbbb ceh hecc bbbbb cdfh *
* hfdc cdeh he c . c eh hedc cdfh *
* hfdc cdfh hedc . cdeh hfdc cdfh *
* hfd cc c dfh hedcc . ccdeh hfd c cc dfh *
* hfed cccc ccc dfh hfd cc . cc dfh hfd ccc cccc defh *
*. hged ccc dfh hfd cccccccc dfh hfd ccc degh .*
* hged defh hfdd . ddfh hfed degh *
* hfedd ddefh hfed . defh hfed ddefh *
* hge d d efh hfed . d fh h e d dd egh *
* hge dd dd egh hfe d . d efh hge dd dd e gh *
* hgfe ddddd egh hfe d . d efh hge ddddd efgh *
* hgfe e gh hfe dddddd efh hg e efgh *
* hgf e efgh hfee . efh hgfe e fgh *
* hf e eefgh hf . e fh hgfee e fh *
* hf e e fgh hgfe . efgh hgf e e fh *
*. hff eee ee fgh hgf e . e fgh hgf ee eee ffh .*
* hgf eeeee fgh hgf ee . ee fgh hgf eeeee fgh *
* hgf f gh hgf eee .eee fgh hg f fgh *
* hg f fggh hgf eeee fgh hggf f gh *
* hg f f gh hg f . f gh hg f f gh *
* hg ff ff gh hg f . f gh hg ff ff gh *
* h g fff ff gh hg f . f gh hg ff ff g h *
* h g fff g h h g ff . ff g h h g fff g h *
* hgg g h h g f . f g h h g ggh *
* h g g h h g ff .ff g h h g g h *
*. h gg g h hg ff gh h g gg h .*
* h gg gg h h g . g h h gg gg h *
*. h g g h. h g . . g h . h g. g h . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 120.0 sec output.
The approximate number of adv/um is 93.00
Output g took 93 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 27.550u, 0.460s seconds 15:10:21
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:10:33 1991
1----------------------------------------------------------------------------8
sample> # ELECTRON BEAM LITHOGRAPHY EXAMPLE
sample> # GAUSSIAN BEAMS
sample> # Input File: sameb2
sample> optdevelop 0 1 1 ; # set flags , plot and accuracy.
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 1
sample> eblith ; # initialize default parameters
---------- System Message (E-Beam) ----------
E-beam default values initialized
sample> eblpatns 6 (0.0 .106 .25) (.25 .106 .25)
sample> (.5 .106 .25) (.75 .106 .25)
sample> (1.75 .106 .25) (2.0 .106 .25) ; # specify line
sample> eblnline 1 0.0 1 ; # specify array of lines
sample> eblwind 3.0 0 0.5 ; # convolution and development window
sample> eblcnvlv 100.0 ; # set dose and run convolution
*********************
* e-resist exposure *
*********************
Distribution of absorbed energy in the resist from a delta source
is to be read in from the Monte Carlo data file mcdat
Resist thickness = 1.0000 micrometers
Beam energy = 20.000 Kev
Cell size = 0.0250 micrometers in x
Cell size = 0.0250 micrometers in z
Emat has 40 rows and 200 columns
Etem2 has 399 columns
Emlt has 599 columns
Elin has 42 rows and 802 columns
Dose = 100.00 uC/cm**2
6 spots/line
Spot # 1 Std. Dev. = 0.1060 um Weight = 0.2500 Distance shifted = 0.0000 um
Spot # 2 Std. Dev. = 0.1060 um Weight = 0.2500 Distance shifted = 0.2500 um
Spot # 3 Std. Dev. = 0.1060 um Weight = 0.2500 Distance shifted = 0.5000 um
Spot # 4 Std. Dev. = 0.1060 um Weight = 0.2500 Distance shifted = 0.7500 um
Spot # 5 Std. Dev. = 0.1060 um Weight = 0.2500 Distance shifted = 1.7500 um
Spot # 6 Std. Dev. = 0.1060 um Weight = 0.2500 Distance shifted = 2.0000 um
1 Lines written
Line # 1 Shift distance = 0.0000 um, Weight = 1.0000
-------- Line # 1 --------
Line starts 0.5000 micrometers from window edge
Spot # 1 is 0.5000 micrometers from window edge
Spot # 2 is 0.7500 micrometers from window edge
Spot # 3 is 1.0000 micrometers from window edge
Spot # 4 is 1.2500 micrometers from window edge
Spot # 5 is 2.2500 micrometers from window edge
Spot # 6 is 2.5000 micrometers from window edge
sample> eblengpts 1 1 19 ; # print pts for energy contours
---------- System Message (E-Beam) ----------
Energy profile points are put in file engpts.
First depth = 1 Skip depth = 19
sample> eblstrpts 75 ; # set number of string points
sample> devtime 0 120 7 ; # set development times
Develop the resist from 0.00000 to 120.00000 seconds in 7 steps
sample> ebldevelop ; # develop
************************
* e-resist development *
************************
Rate equation coefficients:
R1 = 1.0000 Cm = 1.0000 D0 = 199 alpha = 2.0000
Aniso.rate fraction = 1.00000
Dev time for first output = 0.0 seconds
Dev time for final output = 120.0 seconds
Time between intermediate dev = 20.0 seconds
The developer has broken through the resist in 76.0 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
0.0 -1.5000 0.0000 1.0000
20.0 -0.4732 0.2269 0.7731
40.0 -0.5097 0.4805 0.5195
60.0 -0.5261 0.7635 0.2365
80.0 -0.9502 0.9777 0.0223
100.0 -1.1603 0.9885 0.0115
120.0 0.0359 0.9956 0.0044
x left = -1.5000 micrometers
x right = 1.5000 micrometers
z top = 0.0000 micrometers
z bottom = 1.0000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 0.0 sec
b 20.0 sec
c 40.0 sec
d 60.0 sec
e 80.0 sec x = -0.9142 micrometers 3.3 degrees
f 100.0 sec x = -1.1559 micrometers 9.6 degrees
g 120.0 sec x = -1.2508 micrometers -88.1 degrees
The window is 3.0000 micrometers wide in x.
The edge is 1.5000 micrometers from the left side of the window.
******************************************************************************
*ccbbbbbaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaabbbbbbbbbbbbbaaaaaaaaaaaaaaaaaabbbbccc*
*gffffedcb bbddeeeeeeeeeedcb bcdefffgg*
* gggggfecb bcdfgggggggggggedcb bcefgggg *
* gfc b deg gecb dfg *
* c b b dfg gec b b c *
* gfdcbb b cdfg gec b b dfg *
* gedc b bb b bb bb cdfg ge bbbbbb bb cdfg *
* gedc b bbbb bbbb b cdeg gec cdfg *
* g c cdeg ge c c fg *
* gedc cdeg gedc dfg *
*. ged c c deg gedc c dfg .*
* gfd c c dfg ged c c dfg *
* gfd c c deg ged c c dfg *
* d c c c dfg ged c cc cc defg *
* gf d cc c c c cc d eg gfed c defg *
* gf c cc cccc d fg gfed defg *
* gf d d eg gfe d defg *
* gfed de g gf d d efg *
* gfe d d e g gfe d d efg *
* gfe d d efg gfe d d e g *
*. gfe d d efg gf e d d dd ef .*
* gfe d dd efg gf e d d fg *
* gfe d d ef.g g fe e fg *
* g e d d d e fg g ee e fg *
* gf e dddd dd dd e fg gf e e fg *
* gf e e fg gf e e f g *
* gf e e g gf e e g *
* gf e e f.g g e e f g *
* g f e e fg g f e eeee fg *
* f e f . g f f g *
*. g e e f g g f f g .*
* g f ee e f g g f f g *
*. f . . . g . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 80.0 sec output.
The approximate number of adv/um is 63.00
Output e took 63 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 12.290u, 0.340s seconds 15:10:46
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:23:41 1991
1----------------------------------------------------------------------------8
sample> # ION BEAM LITHOGRAPHY EXAMPLE
sample> # ION BEAM (DEFAULTS)
sample> # Input File: samio0
sample> ionprint 0 0 0 1 1 1 1 ; # set printing flags
sample> ionbeam 1 200 1.3 0 ; # input beam parameters
sample> ionreswin .5 5.0 0 .011 .011 ; # set resist geometry
sample> ionmask 25 .85 0 .85 0 1 2 3 4 ; # set mask geometry
sample> ionscat 74 -10 -10 -10 -10 -10 -10 ; # calculate mask scattering
sample> ionexpose 100 10 ; # expose the resist
.......calculate mask scattering......
*calculating transmitting region distribution* (channeled ions)
*calculating absorbing region distribution*
*calculating transmitting region distribution* (non-channeled ions)
****printing flags****
0 0 0 1 1 1 1 0 0 0
*****distance calculation parameters*****
horizontal points, axial points, cellx, cellz, resist window, shift
(distances in micrometers)
100 80 0.051 0.006 5.000 0.000
memb. thickness, abs. thickness, taper width, taper angle, mask/resist spacing
(distances in micrometers, angles in degrees)
0.850 0.850 0.000 90.000 25.000
mask edges at (micrometers):
0.000 1.000 2.000 3.000 4.000 0.000 0.000 0.000 0.000
*****scattering parameters*****
initial beam energy, energy (membrane region), energy (absorber region)
(energy in kev)
200.000 143.103 1.341
incident dose, dose (memb. region), dose (abs. region), chimin dose
(atoms/cm**2)
0.13000E+14 0.12989E+14 0.68606E+11 0.11015E+11
mask contrast, chi min
0.22776E+01 0.00085
(angles in degrees)
critical angle, psi half (channeled), psi half (dechanneled), psi half (absorbers)
0.12530E+01 0.34985E+00 0.31894E+01 0.25749E+02
*****resist parameters*****
resist thickness, sigma(membrane), sigma(absorber)
(distances in micrometers)
0.500 0.11000E-01 0.11000E-01
R1, Cm, Do, and alpha
0.10000E+01 0.10000E+01 0.17400E+03 0.19000E+01
sample> iondevtime 10 90 20 -1 ; # set development times
sample> iondevlp ; # develop the resist
.......begin resist development......
dev time for first output = 10.0 seconds
dev time for final output = 90.0 seconds
time between intermediate dev = 20.0 seconds
The developer has broken through the resist in 22.5 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
10.0 1.5153 0.3222 0.3555
30.0 1.9415 0.5000 0.0001
50.0 0.9576 0.4998 0.0005
70.0 0.9150 0.4985 0.0029
90.0 0.8891 0.4985 0.0030
x left = 0.0000 micrometers
x right = 5.0000 micrometers
z top = 0.0000 micrometers
z bottom = 0.5000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 10.0 sec
b 30.0 sec x = 1.0588 micrometers 0.0 degrees
c 50.0 sec x = 0.9577 micrometers 0.0 degrees
d 70.0 sec x = 0.9155 micrometers 0.0 degrees
e 90.0 sec x = 0.8895 micrometers 0.0 degrees
The window is 5.0000 micrometers wide in x.
The edge is 0.0000 micrometers from the left side of the window.
******************************************************************************
*dddddddddccba . . abcddddcba . . abccddddddddd*
*eeeeeeeeeeeeca aceeeeeeeeca aceeeeeeeeeeee*
*. eeaa bee eeb aaee *
*. eba abe eba abe *
*. eca ace eca ace *
*. eca ace eca ace *
*. eca ace eca ace *
*. ec a a ce ec a a ce *
*. ed a a ce ec a a ce *
*. ed a a de ed a a de *
*. ed a a de ed a a de .*
*. edba abde edba abde *
*. edbaa aabde edbaa aabde *
*. edb a a bde edb a a bde *
*. edb a a bde edb a a bde *
*. eeb a a bde eeb a a bde *
*. eb a a be eb aa a be *
*. eb a a be eb a a be *
*. eb a a be eb a a be *
*. eb a a be eb a a be *
*. eb aa aaa be eb aaa aa be .*
*. eb aaaaa be eb aaaaa be *
*. ec ce ec ce *
*. ecb bce ecb bce *
*. ecb bce ecb bce *
*. ecb bce ecb bce *
*. ecb bce ecb bce *
*. ecb bce ecb bce *
*. ecb bce ecb bce *
*. ecb bde edb bce *
*. edb bbde edbb bde .*
*. ed b b de ed b b de *
*. . ed b . b.de . ed b . b.d . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 30.0 sec output.
The approximate number of adv/um is 78.00
Output b took 39 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 13.510u, 0.230s seconds 15:23:55
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:24:27 1991
1----------------------------------------------------------------------------8
sample> # ION BEAM LITHOGRAPHY EXAMPLE
sample> # BASIC MIBL
sample> # Input File: samio1
sample> ionprint 0 0 0 1 1 1 1 1 ; # set printing flags
sample> ionbeam -1 190 2. 0 ; # input beam parameters
sample> ionmask 25 0.75 0 0.75 0 0.5 1. 1.5 2.; # set mask topography
sample> ionscat 74 -10 -10 -10 -10 -10 -10 ; # calculate mask scattering
sample> ionreswin 1 2.5 0 .01 .01 ; # set resist geometry
sample> ionedep -10 -10 ; # calc. deposition in resist
sample> ionexpose 200 -1 ; # expose the resist
.......calculate mask scattering......
*calculating transmitting region distribution* (channeled ions)
*calculating absorbing region distribution*
*calculating transmitting region distribution* (non-channeled ions)
****printing flags****
0 0 0 1 1 1 1 1 0 0
*****distance calculation parameters*****
horizontal points, axial points, cellx, cellz, resist window, shift
(distances in micrometers)
200 30 0.013 0.036 2.500 0.000
memb. thickness, abs. thickness, taper width, taper angle, mask/resist spacing
(distances in micrometers, angles in degrees)
0.750 0.750 0.000 90.000 25.000
mask edges at (micrometers):
0.000 0.500 1.000 1.500 2.000 0.000 0.000 0.000 0.000
*****scattering parameters*****
initial beam energy, energy (membrane region), energy (absorber region)
(energy in kev)
190.000 138.933 5.719
incident dose, dose (memb. region), dose (abs. region), chimin dose
(atoms/cm**2)
0.20000E+14 0.19983E+14 0.44052E+12 0.17201E+11
mask contrast, chi min
0.16571E+01 0.00086
(angles in degrees)
critical angle, psi half (channeled), psi half (dechanneled), psi half (absorbers)
0.12821E+01 0.35436E+00 0.30330E+01 0.24248E+02
*****resist parameters*****
resist thickness, sigma(membrane), sigma(absorber)
(distances in micrometers)
1.000 0.10000E-01 0.10000E-01
R1, Cm, Do, and alpha
0.10000E+01 0.10000E+01 0.17400E+03 0.19000E+01
********range data********
(micrometers)
range (membrane), straggle (membrane)
0.26905E+01 0.21499E+00
range (absorber), straggle (absorber)
0.44593E+00 0.15101E+00
sample> iondevtime 15 60 15 200 ; # set development times
sample> iondevlp ; # develop the resist
.......begin resist development......
dev time for first output = 15.0 seconds
dev time for final output = 60.0 seconds
time between intermediate dev = 15.0 seconds
The developer has broken through the resist in 37.5 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
15.0 0.7520 0.4218 0.5782
30.0 0.7482 0.8893 0.1107
45.0 1.4747 0.9950 0.0050
60.0 1.0912 0.9918 0.0082
x left = 0.0000 micrometers
x right = 2.5000 micrometers
z top = 0.0000 micrometers
z bottom = 1.0000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 15.0 sec
b 30.0 sec
c 45.0 sec x = 0.4761 micrometers 0.0 degrees
d 60.0 sec x = 0.4105 micrometers 0.0 degrees
The window is 2.5000 micrometers wide in x.
The edge is 0.0000 micrometers from the left side of the window.
******************************************************************************
*ddddddddcba . . aabbaa . . abcdddddddd*
*. dddcba abcddddcba abdddd *
*. dcba abcd dcba aacd *
*. d aa aabcd aa aabc *
*. db a a d db a a d *
*. db a a bd db a a bd *
*. db a a db a a bd *
*. d b a a bd d b a a *
*. d b a a b d a a b d *
*. b a a bcd d b a a bcd *
*. dcb a aa bcd dcb aa a b .*
*. dc aa a bcd dcb a aa cd *
*. dcb aa aa bcd dcb aa aa bcd *
*. dcb aaaaaa b b aaaaaa bcd *
*. bcd dcb bcd *
*. dcb b cd dc b *
*. dc b cd dc b b cd *
*. dc b b cd dc b cd *
*. dc b b cd dc b b *
*. dc b b cd dc b b cd *
*. dc b b cd dc b b cd .*
*. dc b b cd dc b d *
*. b b cd dc b b cd *
*. dc bb b cd b b cd *
*. d c b b c d d c b b c d *
*. d c b b c d c b b *
*. dc b b cd d bb bb cd *
*. dc bb bb c dc bb bb cd *
*. bbbbbbbb d c bbbbbbb cd *
*. dc cd d c *
*. d c c d d c c d .*
*. d c c d c d *
*. . c . . d . c . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 45.0 sec output.
The approximate number of adv/um is 36.00
Output c took 36 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample> ionecntr 1 1 27 1 ; # output the energy contours
--------- system message (ion-beam) ---------
energy profile points are put in file engpts.
first depth = 1 skip depth = 27
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 7.960u, 0.280s seconds 15:24:36
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:26:03 1991
1----------------------------------------------------------------------------8
sample> # ION BEAM LITHOGRAPHY EXAMPLE
sample> # TAPERED ABSORBER ION MASK
sample> # Input File: samio2
sample> ionbeam 1 250 2.5 0 ; # set beam parameters
sample> ionmask 25 1.1 1 1.25 1. ; # set tapered mask geometry
sample> ionscat 74 -10 -10 -10 -10 -10 -10 ; # calculate mask scattering
sample> ionreswin 1 2. 0 .01 .01 ; # set resist parameters
sample> ionedep -10 -10 ; # calculate energy deposition
sample> ionexpose -1 10 ; # expose resist
.......calculate mask scattering......
*calculating transmitting region distribution* (channeled ions)
*calculating absorbing region distribution*
*calculating tapered absorber region distribution*
*calculating transmitting region distribution* (non-channeled ions)
****printing flags****
0 0 0 1 1 1 1 0 0 0
*****distance calculation parameters*****
horizontal points, axial points, cellx, cellz, resist window, shift
(distances in micrometers)
100 30 0.020 0.036 2.000 0.000
memb. thickness, abs. thickness, taper width, taper angle, mask/resist spacing
(distances in micrometers, angles in degrees)
1.250 1.100 1.000 47.726 25.000
mask edges at (micrometers):
1.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000
*****scattering parameters*****
initial beam energy, energy (membrane region), energy (absorber region)
(energy in kev)
250.000 173.741 0.000
incident dose, dose (memb. region), dose (abs. region), chimin dose
(atoms/cm**2)
0.25000E+14 0.24980E+14 0.13705E+11 0.19964E+11
mask contrast, chi min
0.32611E+01 0.00080
(angles in degrees)
critical angle, psi half (channeled), psi half (dechanneled), psi half (absorbers)
0.11326E+01 0.32130E+00 0.28619E+01 0.21860E+02
*****resist parameters*****
resist thickness, sigma(membrane), sigma(absorber)
(distances in micrometers)
1.000 0.10000E-01 0.10000E-01
R1, Cm, Do, and alpha
0.10000E+01 0.10000E+01 0.17400E+03 0.19000E+01
sample> iondevtime 60 300 60 100 ; # set development times
sample> iondevlp ; # develop the resist
.......begin resist development......
dev time for first output = 60.0 seconds
dev time for final output = 300.0 seconds
time between intermediate dev = 60.0 seconds
The developer has broken through the resist in 24.0 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
60.0 1.1639 0.9550 0.0450
120.0 1.2258 0.9571 0.0429
180.0 1.2622 0.9586 0.0414
240.0 1.2913 0.9601 0.0399
300.0 1.3172 0.9618 0.0382
x left = 0.0000 micrometers
x right = 2.0000 micrometers
z top = 0.0000 micrometers
z bottom = 1.0000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 60.0 sec x = 1.1621 micrometers 0.0 degrees
b 120.0 sec x = 1.2243 micrometers 0.0 degrees
c 180.0 sec x = 1.2603 micrometers -51.9 degrees
d 240.0 sec x = 1.2890 micrometers -88.2 degrees
e 300.0 sec x = 1.3146 micrometers 0.0 degrees
The window is 2.0000 micrometers wide in x.
The edge is 0.0000 micrometers from the left side of the window.
******************************************************************************
*0 . . . . . . . +*
*. aaaaaaaaaaaaaaaaaaaaaaaaaaaaaa*
*. aa bbbbbbbbbbbbbbbbbbbbbbbbbbbb*
*. a b ccccccccccccccccccccccccccc*
*. a bc dddddddddddddddddddddddddd*
*. a b cd eeeeeeeeeeeeeeeeeeeeeeeee*
*. a b cd e *
*. *
*. a b cd e *
*. a b cd e *
*. a .*
*. b cd e *
*. a b cd e *
*. de *
*. a b cde *
*. a b *
*. cde *
*. a b cde *
*. a b cde *
*. *
*. a b cde .*
*. a b *
*. cde *
*. a b cd *
*. a e *
*. a b cde *
*. b cde *
*. a b cde *
*. a bc de *
*. a bc de *
*. .*
*. a bcde *
*. . . . . . . . *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
The resist has developed through to the substrate
at one or more points in the 60.0 sec output.
The approximate number of adv/um is 45.00
Output a took 45 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample> ionecntr 1 1 27 1 ; # output energy contours
--------- system message (ion-beam) ---------
energy profile points are put in file engpts.
first depth = 1 skip depth = 27
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 6.620u, 0.430s seconds 15:26:10
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 16:00:43 1991
1----------------------------------------------------------------------------8
sample> # X-RAY LITHOGRAPHY EXAMPLE
sample> # X-RAY (DEFAULTS)
sample> # Input File: samxr0
sample> xrayprint 1 ; # print out x-ray information
ioflag = 1
sample> optdevelop 0 1 1 ; # plot resist profiles
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 1
sample> xraymask 0.2 0.3 60.0 4.6021 ; # mask parameters
sample> xratetop 0.2 0.10 6.8 1. 59.0 2.2 ; # top resist
sample> xratebot 0.2 0.40 6.8 1. 59.0 2.2 ; # bottom resist
sample> xraygold 1. 0.0672 .5 0.03 ; # Au parameters
sample> xrayrowcol 50 20 ; # cell size
sample> xraywindow 0.4 0.0 0.3 ; # window
sample> xrayexpose 80.0 ; # dose and exposure
*************************
* x-ray resist exposure *
*************************
Exposure parameter:
Dose = 80.0000 mJ/cm**2
Mask parameter:
Location in um = 0.20000
Thickness in um = 0.30000
Theta in deg. = 60.00000
Mu in cm-1 = 4.40210
Wafer parameter:
Top resist
Thickness in um = 0.20000
Mu in um-1 = 0.10000
Bottom resist
Thickness in um = 0.20000
Mu in um-1 = 0.40000
Gold absorber
Located at the bottom of the 1 layer
Absorption of Au = 0.06720
Emission of Au = 0.50000
Range of Au in um = 0.03000
Photoresist is divided into 50 columns and 20 rows.
Cell size = .00816 micrometers in x
Cell size = .02000 micrometers in z
sample> xraynpts 60 ; # number of string points.
sample> devtime 10 60 5 ;
Develop the resist from 10.00000 to 60.00000 seconds in 5 steps
sample> xrdevelop ; # run development.
****************************
* x-ray resist development *
****************************
Rate equation coefficient:
Top resist
Mu in um-1 = 0.10000
R1 in A/sec = 6.80000
Cm to 500,000 = 1.00000
D0 in J/cm3 = 59.00000
Alpha = 2.20000
Bottom resist
Mu in um-1 = 0.40000
R1 in A/sec = 6.80000
Cm to 500,000 = 1.00000
D0 in J/cm3 = 59.00000
Alpha = 2.20000
Dev time for first output = 10.0 seconds
Dev time for final output = 60.0 seconds
Time between intermediate dev = 12.5 seconds
The developer has broken through the resist in 47.5 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
10.0 0.0120 0.0760 0.8100
22.5 0.0120 0.1267 0.6832
35.0 0.0120 0.1771 0.5572
47.5 -0.0296 0.3955 0.0114
60.0 -0.1508 0.3948 0.0129
x left = -0.2000 micrometers
x right = 0.2000 micrometers
z top = 0.0000 micrometers
z bottom = 0.4000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 10.0 sec
b 22.5 sec
c 35.0 sec
d 47.5 sec x = -0.0249 micrometers 71.6 degrees
e 60.0 sec x = -0.1499 micrometers 0.0 degrees
The window is 0.4000 micrometers wide in x.
The edge is 0.2000 micrometers from the left side of the window.
******************************************************************************
*+ . . . 0 . . . . +*
* . *
* . *
* . *
* . *
* . *
*aaaaaaa aaa . *
* aaaaaaaaa . *
*bbbbbbb aaaa a . *
* bbbb b a aaaa . *
*. b bbb aa a . .*
*cccccccc bbb aa aaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaa*
* cc c b b . *
*dddddd ccc bb . *
* ddd cc bb . *
* ddd cc bb . *
*eeeeeee ddd cc bb . *
* eee d cc bb . *
* e dd c bb . *
* ee d c bbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbb*
*. e d c . .*
* e d cc . *
* e d . *
* e d cc . *
* e d c . *
* e d cc . *
* e d cccc. *
* eeee dd cccccccccccccccccccccccccccccccccccccc*
* eeeee d . *
* e e dddddd . *
*. ee d . .*
* . *
* d . *
* e . *
* d . *
* . *
* . *
* e . *
* d . *
* . *
*. e . .*
* d . *
* . *
* d . *
* d . *
* e . *
* d . *
* . *
* e d . *
* . *
*. d . .*
* e . *
* d . *
* d . *
* e d . *
* d . *
* e d . *
* d . *
* d . *
* e dd . *
*. . . . . . . . . .*
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 60.00 lines.)
The resist has developed through to the substrate
at one or more points in the 47.5 sec output.
The approximate number of adv/um is 660.00
Output d took 264 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 9.030u, 0.430s seconds 16:01:00
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 16:01:11 1991
1----------------------------------------------------------------------------8
sample> # X-RAY LITHOGRAPHY EXAMPLE
sample> # X-RAY WITH Au LAYER ON BOTTOM OF TOP RESIST
sample> # Input File: samxr1
sample> xrayprint 1 ; # print out x-ray information
ioflag = 1
sample> optdevelop 0 1 1 ; # plot resist parameters
this trial-stmt sets the flags
idevfl(1)= 0, idevfl(2)= 1, idevfl(3)= 1
sample> xraymask 0.6 0.3 90.0 4.6021 ; # mask parameters
sample> xratetop 0.55 0.40 6.8 1. 59.0 2.2 ; # top resist
sample> xratebot 0.25 0.40 6.8 1. 59.0 2.2 ; # bottom resist
sample> xraygold 2. 0.0672 .5 0.03 ; # Au parameters
sample> xrayrowcol 50 20 ; # cell size
sample> xraywindow 0.8 0.0 0.6 ; # window
sample> xrayexpose 10.0 ; # dose and exposure
*************************
* x-ray resist exposure *
*************************
Exposure parameter:
Dose = 10.0000 mJ/cm**2
Mask parameter:
Location in um = 0.60000
Thickness in um = 0.30000
Theta in deg. = 90.00000
Mu in cm-1 = 4.40210
Wafer parameter:
Top resist
Thickness in um = 0.55000
Mu in um-1 = 0.40000
Bottom resist
Thickness in um = 0.25000
Mu in um-1 = 0.40000
Gold absorber
Located at the bottom of the 2 layer
Absorption of Au = 0.06720
Emission of Au = 0.50000
Range of Au in um = 0.03000
Photoresist is divided into 50 columns and 20 rows.
Cell size = .01633 micrometers in x
Cell size = .04000 micrometers in z
sample> xraynpts 60 ; # number of string points.
sample> devtime 60 480 8 ;
Develop the resist from 60.00000 to 480.00000 seconds in 8 steps
sample> xrdevelop ; # run development.
****************************
* x-ray resist development *
****************************
Rate equation coefficient:
Top resist
Mu in um-1 = 0.40000
R1 in A/sec = 6.80000
Cm to 500,000 = 1.00000
D0 in J/cm3 = 59.00000
Alpha = 2.20000
Bottom resist
Mu in um-1 = 0.40000
R1 in A/sec = 6.80000
Cm to 500,000 = 1.00000
D0 in J/cm3 = 59.00000
Alpha = 2.20000
Dev time for first output = 60.0 seconds
Dev time for final output = 480.0 seconds
Time between intermediate dev = 60.0 seconds
The developer has broken through the resist in 420.0 seconds.
---- Developed pattern ----
time distance max depth norm thik
from mask edge
60.0 0.0172 0.1254 0.8433
120.0 0.0126 0.2458 0.6928
180.0 0.0157 0.3605 0.5494
240.0 0.0115 0.4708 0.4115
300.0 0.0173 0.6125 0.2343
360.0 0.0125 0.7108 0.1115
420.0 -0.0078 0.7931 0.0087
480.0 -0.0752 0.7858 0.0177
x left = -0.4000 micrometers
x right = 0.4000 micrometers
z top = 0.0000 micrometers
z bottom = 0.8000 micrometers
Symbol: time: resist-substrate intersection: sidewall angle estimate
(by a straight line fit to all the CDs)
a 60.0 sec
b 120.0 sec
c 180.0 sec
d 240.0 sec
e 300.0 sec
f 360.0 sec
g 420.0 sec x = -0.0023 micrometers 23.1 degrees
h 480.0 sec x = -0.0648 micrometers 0.0 degrees
The window is 0.8000 micrometers wide in x.
The edge is 0.4000 micrometers from the left side of the window.
******************************************************************************
*+ . . . 0 . . . . +*
* . *
* . *
* . *
*aaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaa . *
* a . *
* a . *
* a . *
* a. *
*bbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbb aaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaa*
*. b . .*
* b . *
* b . *
*ccccccccccccccccccccccccccccc . *
* c b . *
* . *
* c b . *
*ddddddddddddddddddddddddd b. *
* d c bbb bbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbbb*
* d c . *
*. d . .*
* d c . *
*eeeeeeeeeeeeeeeeeeeeeee c . *
* e d c . *
* e d . *
* e d c . *
*fffffffffffffffffff e c. *
* f e d ccc cccccccccccccccccccccccccccccccccc*
* f d . *
* e d . *
*gggggggggggggggg f e . .*
* f d . *
* g f e d . *
* gg e d . *
*hhhhhhhhhhhhhh f ee d. *
* g f d.ddddddddddddddddddddddddddddddddddddd*
* h g e . *
* h g f e . *
* h g f . *
* h g f e . *
*. g . .*
* h f . *
* e . *
* g f . *
* h g f ee . *
* g f e. *
* h g ff eeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeee*
* hh g f . *
* h gg . *
* h gg f . *
*. h f . .*
* h g f . *
* h f. *
* h g f.fffffffffffffffffffffffffffffffffffff*
* h gg . *
* . *
* h g . *
* h g . *
* h g . *
* h g. *
*. . . . . . . . . .*
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 60.00 lines.)
The resist has developed through to the substrate
at one or more points in the 420.0 sec output.
The approximate number of adv/um is 393.75
Output g took 315 string advances.
---------- System message(dvelop) ----------
Profile coordinates are put in the plot-data file
1
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 6.760u, 0.230s seconds 16:01:18
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Mon Jul 8 16:28:57 1991
1----------------------------------------------------------------------------8
sample> # DEPOSITION EXAMPLE
sample> # DEPOSITION (DEFAULTS)
sample> # Input File: samdp0
sample> metsrcparm 3 90.0 -90.0 -0.005 0 ; # hemispherical source
sample> metgraphf 1
sample> metmaxxz 2.0 1.0 ; # window dimensions for plot
sample> metinprof (0.0,0.5) (1.0,0.5)
sample> (1.0,1.0) (2.0,1.0) ; # set initial profile
sample> mettimstep 0 60, 3 ; # deposition times
sample> metrun ; # run deposition machine
********************
* Run Deposition *
********************
System configuration :
Hemispherical Vapor Source
Incident vapor angles = 90.0 -90.0 degrees
Coefficient A for cosine distr. = 0.0
Deposition rate = -0.00500 um/sec
First deposition profile = 0.000 secs
Time increment between profiles = 20.000 secs
Final deposition profile = 60.000 secs
Deposition Results :
Average dep (curve 1) (x = 0.000 to 2.000 um) is 0.10156 um.
Average dep (curve 2) (x = 0.000 to 2.000 um) is 0.20300 um.
Average dep (curve 3) (x = 0.000 to 2.000 um) is 0.30472 um.
x left margin = 0.000 micrometers
x right margin = 2.000 micrometers
z top margin = 0.000 micrometers
z bottom margin = 1.000 micrometers
symbol time
a 20.0 sec
b 40.0 sec
c 60.0 sec
******************************************************************************
*0 *
* *
* *
* *
* *
* *
*c c c c c c c c c c c *
* *
* *
* *
*b b b b b b b b b b b c *
* *
* *
*a a a a a a a a a a a c *
* *
* b *
*+ + + + + + + + + + + *
* a c *
* *
* + b *
* *
* a c *
* + b *
* c c c cc*
* a c c c *
* c c *
* + b c b b b b b b*
* a b b b *
* c b *
* + b a a a a a a a*
* a a a a *
* *
* + + + + + + + + + + +*
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
Time interval between advances = 2.5000 seconds
Total number of advances = 24
Number of advances between outputs = 8
Profile coordinates are put in the plot-data file
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 1.080u, 0.250s seconds 16:28:59
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:06:00 1991
1----------------------------------------------------------------------------8
sample> # DEPOSITION EXAMPLE
sample> # ALUMINUM DEPOSITION BY PLANETARY EVAPORATION
sample> # Input File: samdp1
sample> metsrcparm 5 0 4.5 56.0 20.0 18.0 7.5 -0.010
sample> ; # planetary source
sample> metgraphf 1 ; # request profile in plotfile
sample> metmaxxz 4.0 2.0 ; # window dimensions for plot
sample> metinprof (0.00,1.0) (0.75,1.0)
sample> (0.75,2.0) (3.25,2.0)
sample> (3.25,1.0) (4.00,1.0) ; # set initial profile
sample> mettimstep 0 90, 10 ; # specify time of deposition
sample> metrun ; # run deposition machine
********************
* Run Deposition *
********************
System configuration :
Planetary Rotating Source
Planet radius = 4.5 in
Beta = 20.0 degrees
Gamma = 56.0 degrees
System axis length = 18.0 in
Planet axis length = 7.5 in
Deposition rate = -0.01000 um/sec
First deposition profile = 0.000 secs
Time increment between profiles = 9.000 secs
Final deposition profile = 90.000 secs
Deposition Results :
Average dep (curve 1) (x = 0.000 to 4.000 um) is 0.08926 um.
Average dep (curve 2) (x = 0.000 to 4.000 um) is 0.17851 um.
Average dep (curve 3) (x = 0.000 to 4.000 um) is 0.26802 um.
Average dep (curve 4) (x = 0.000 to 4.000 um) is 0.35756 um.
Average dep (curve 5) (x = 0.000 to 4.000 um) is 0.44711 um.
Average dep (curve 6) (x = 0.000 to 4.000 um) is 0.53678 um.
Average dep (curve 7) (x = 0.000 to 4.000 um) is 0.62646 um.
Average dep (curve 8) (x = 0.000 to 4.000 um) is 0.71616 um.
Average dep (curve 9) (x = 0.000 to 4.000 um) is 0.80586 um.
Average dep (curve 10) (x = 0.000 to 4.000 um) is 0.89551 um.
x left margin = 0.000 micrometers
x right margin = 4.000 micrometers
z top margin = 0.000 micrometers
z bottom margin = 2.000 micrometers
symbol time
a 9.0 sec
b 18.0 sec
c 27.0 sec
d 36.0 sec
e 45.0 sec
f 54.0 sec
g 63.0 sec
h 72.0 sec
i 81.0 sec
j 90.0 sec
******************************************************************************
*0 *
* *
*j j jj j jj j j j jj j j jjjjjj*
*i i i i i i ji i i i i i iiiiiii*
*hhh h h h hhj h h hh h h h hhhhh*
* i j j *
*gg g g gg gg i ji g g g g g gg ggggg*
*ff f f f f ff hj ih ff f f f f f ffff*
* g i hg *
*e e e ee e eef hj ji fe e e ee e e eeee*
*d d d d d d de gi hg d d d d d d ddddd*
* fhj j gf *
*cc cc c c c cce ij i fe c cc c c c c ccc*
*bb b b b bb bbdfi j h edb b b b b bb bbb*
* cehj jihfd *
*aa a a a a a abci ig ec aa a a a a a aa*
*+ + + ++ + + ++ehj j hfd b+ + + ++ + + ++*
* adi ig eca *
* +eij j j j j j j j jihfecb+ *
* aehj i i ii i i i j hfd b+ *
* adi jjih h h h h h hj ig eca *
* +eij jjiih i j hfd b+ *
* aehj jj ii hgg gg g g g ghj jihfecb+ *
* adi jj ii hhh g f f f f ff fgijj ig eca *
* +ehj j ji ih h ggg ff fghijj hfd b+ *
* adi ji ih hg g f f ee e e e e e e fg ghig eca *
* +eiji hg g gf ff e ee d d dd d d de effg hfecb+ *
* aeh gfgf fe e ee ddd d e ef fd b+ *
* adfefe eded d dd d cc cc c c c c cc cd d de eca *
* +e d d dc c c cc c b b b bb b b b b bcc cdcd b+ *
* ac cbcc b b bb b b b b b b bcb+ *
* abb a a a aa a a a a aa a a a a aa a a a a aa a *
* + + + + ++ + + + + + + ++ + + + + + + ++ + + + + *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 32.00 lines.)
Time interval between advances = 4.5000 seconds
Total number of advances = 20
Number of advances between outputs = 2
Profile coordinates are put in the plot-data file
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 5.830u, 0.250s seconds 15:06:06
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:06:19 1991
1----------------------------------------------------------------------------8
sample> # DEPOSITION EXAMPLE
sample> # ALUMINUM LIFT-OFF TECHNIQUE
sample> # Input File: samdp2
sample> metsrcparm 5 0 4.5 56.0 20.0 5.0 7.5 -0.001
sample> metgraphf 1 ; # request profile in plotfile
sample> metaccur 2 1 ; # better accuracy and deloop
sample> metmaxxz 4 4 ; # set window dimensions for plot
sample> metinprof (0.00,1.86)(0.83,1.86)(1.00,2.00)
sample> (0.62,2.16)(0.61,2.26)(0.68,3.00)
sample> (0.93,4.00)(3.08,4.00)(3.32,3.00)
sample> (3.39,2.26)(3.38,2.16)(3.00,2.00)
sample> (3.17,1.86)(4.00,1.86) ; # set initial profile
sample> mettimstep 100, 1000 5 ; # deposition times
sample> metrun ; # run deposition machine
********************
* Run Deposition *
********************
System configuration :
Planetary Rotating Source
Planet radius = 4.5 in
Beta = 20.0 degrees
Gamma = 56.0 degrees
System axis length = 5.0 in
Planet axis length = 7.5 in
Deposition rate = -0.00100 um/sec
First deposition profile = 0.000 secs
Time increment between profiles = 200.000 secs
Final deposition profile = 1000.000 secs
Deposition Results :
Average dep (curve 1) (x = 0.000 to 4.000 um) is 0.19783 um.
Average dep (curve 2) (x = 0.000 to 4.000 um) is 0.39726 um.
Average dep (curve 3) (x = 0.000 to 4.000 um) is 0.59696 um.
Average dep (curve 4) (x = 0.000 to 4.000 um) is 0.79675 um.
Average dep (curve 5) (x = 0.000 to 4.000 um) is 0.99656 um.
x left margin = 0.000 micrometers
x right margin = 4.000 micrometers
z top margin = 0.000 micrometers
z bottom margin = 4.000 micrometers
symbol time
a 200.0 sec
b 400.0 sec
c 600.0 sec
d 800.0 sec
e 1000.0 sec
******************************************************************************
*0 *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
*eeeeeeeeeeeeeeeeee eeeeeeeeeeeeeeee*
* ee e *
* e ee *
*d dddddddddddddddd e e dddddddddddddddd*
* d e e dd *
* de edd *
*cccccccccccccccccc de ed cccccccccccccccc*
* c de ed cc *
* cde edc *
*bbbbbbbbbbbbbbbbbb de ed bbbbbbbbbbbbbbbb*
* bb e ed bb *
* be edb *
*aaaaaaaaaaaaaaaaa be ee aaaaaaaaaaaaaaaa*
* aace e aa *
* e ea *
*+++++++++++++++++ e ea +++++++++++++++++*
* +cd d+ *
* e+ +e *
* eeee eee *
* eee eee *
* e e *
* e e *
* e e *
* e e *
* e e *
* e e *
* e e *
* e e *
* eee e *
* eddee e *
* +bcde eee *
* bcdde eec *
* abcde eeeeeeeeeeee eecb *
* +bcdde e e edba *
* +abcde ee e ecb+ *
* abcdee ee ddddddddddd e edca *
* +abcde eee dd d ee edba *
* +abcde e dd d ee edcb+ *
* abcdde eee dd ccccccccccc dd eee edca+ *
* +abcdee dddd cc cc dd ee edba *
* +abcdddd cccc cc ddd eeeeecb+ *
* +abbc ccc bbbbbbbbbbbbb cccc ddd edca+ *
* +abcccc bbb bb cccc ddcba *
* +ab bbbbbbbb bbbbb cccccb+ *
* +abb aaaaaaaaaaaaaaaa bbbbbbba+ *
* +aaaaaaaaaaa aaaaaaaaa ba *
* + aaaa+ *
* ++++++++++++++++++++++++++++++++++++++++++ *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 60.00 lines.)
Time interval between advances = 50.0000 seconds
Total number of advances = 20
Number of advances between outputs = 4
Profile coordinates are put in the plot-data file
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 40.250u, 0.500s seconds 15:07:03
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Tue Jul 9 14:15:18 1991
1----------------------------------------------------------------------------8
sample> # DEPOSITION EXAMPLE
sample> # MULTIPLE DEPOSITION OF OXIDE THEN ALUMINUM
sample> # Input File: samdp3
sample> # Step1:Oxide Deposition by Sputtering
sample> metsrcparm 3 90.0 -90.0 -0.001 ; # hemispherical source (uniform distr.)
sample> metgraphf 1 ; # profile coordinates in plotfile
sample> metaccur 2 0 ; # better accuracy
sample> metmaxxz 4.0 4.0 ; # window dimensions for plot
sample> metinprof (0.0,3.4) (1.5,3.4)
sample> (1.5,3.0) (2.5,3.0)
sample> (2.5,3.4) (4.0,3.4) ; # set initial profile
sample> mettimstep 0 800 1 ; # deposition times
sample> metrun ; # run deposition machine
********************
* Run Deposition *
********************
System configuration :
Hemispherical Vapor Source
Incident vapor angles = 90.0 -90.0 degrees
Coefficient A for cosine distr. = 0.0
Deposition rate = -0.00100 um/sec
First deposition profile = 0.000 secs
Time increment between profiles = 800.000 secs
Final deposition profile = 800.000 secs
Deposition Results :
Average dep (curve 1) (x = 0.000 to 4.000 um) is 0.80849 um.
x left margin = 0.000 micrometers
x right margin = 4.000 micrometers
z top margin = 0.000 micrometers
z bottom margin = 4.000 micrometers
symbol time
a 800.0 sec
******************************************************************************
*0 *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* aaaaaaaaaaaaaaaaaaaaaa *
* aa aa *
* a a *
* a a *
* a a *
* a a *
*aaaaaaaaaa a a aaaaaaaaaa*
* aaaaaaaa a a aaaaaaaa *
* aa a a aa *
* aa a a aa *
* a a a a *
* a a *
* aa ++++++++++++++++++++ aa *
* a + + a *
* a + + a *
* a + + a *
* a + + a *
* + + *
*+++++++++++++++++++++++++++++ +++++++++++++++++++++++++++++*
* *
* *
* *
* *
* *
* *
* *
* *
* *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 60.00 lines.)
Time interval between advances = 33.3333 seconds
Total number of advances = 24
Number of advances between outputs = 24
Profile coordinates are put in the plot-data file
sample> #
sample> # Step2: Al Deposition by Sputtering
sample> metsrcparm 3 90.0 -90.0 -0.001 1 ; # hemispherical source (cosine distr.)
sample> metgraphf 1 ; # profile coordinates in plotfile
sample> methotsigm 0.2 ; # surface migration
sample> metaccur 2 1 ; # better accuracy
sample> metmaxxz 4.0 4.0 ; # window dimensions for plot
sample> mettimstep 0 1000 5 ; # deposition times
sample> metrun ; # run deposition machine
********************
* Run Deposition *
********************
System configuration :
Hemispherical Vapor Source
Incident vapor angles = 90.0 -90.0 degrees
Coefficient A for cosine distr. = 1.0
Deposition rate = -0.00100 um/sec
Surface diffusion sigma = 0.2000 um
First deposition profile = 0.000 secs
Time increment between profiles = 200.000 secs
Final deposition profile = 1000.000 secs
Deposition Results :
Average dep (curve 1) (x = 0.000 to 4.000 um) is 0.20034 um.
Average dep (curve 2) (x = 0.000 to 4.000 um) is 0.40086 um.
Average dep (curve 3) (x = 0.000 to 4.000 um) is 0.60124 um.
Average dep (curve 4) (x = 0.000 to 4.000 um) is 0.80165 um.
Average dep (curve 5) (x = 0.000 to 4.000 um) is 1.00204 um.
x left margin = 0.000 micrometers
x right margin = 4.000 micrometers
z top margin = 0.000 micrometers
z bottom margin = 4.000 micrometers
symbol time
a 200.0 sec
b 400.0 sec
c 600.0 sec
d 800.0 sec
e 1000.0 sec
******************************************************************************
*0 *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* eeeeeeeeeeeeeeeeeeeeee *
* eee eee *
* ee ee *
* ee dddddddddddddddddddddd ee *
* e ddd ddd e *
* e dd dd e *
*eeeeee e dd cccccccccccccccccccccccc dd e eeeeee*
* eeeeeee ee dd ccc ccc dd ee eeeeeee *
* ee e d c c d e ee *
*dddddd e edd cc bbbbbbbbbbbbbbbbbbbbbb cc dde e dddddd*
* dddddd e e d cc bbb bbb cc d e e dddddd *
* dd eedd c bb bb c ddee dd *
*ccccccc deed c b aaaaaaaaaaaaaaaaaaaaaa b c deed ccccccc*
* ccccccc dedc b aa aa b cded ccccccc *
* cc edc b aa aa b cde cc *
*bbbbbbbb cddcbb a ++++++++++++++++++++++ a bbcddc bbbbbbbb*
* bbbbbbb ddcb a ++ ++ a bcdd bbbbbbb *
* bb dcbaa + + aabcd bb *
*aaaaaaaaa bdcba + + abcdb aaaaaaaaa*
* aaaaaaa bcba + + abcc aaaaaaa *
* aa cca+ +acc aa *
*++++++++++ abca+ +acba ++++++++++*
* ++++++++ abb+ +bba ++++++++ *
* ++ab+ +bb++ *
* ++bb bb++ *
* aa+ +aa *
* aa aa *
* aa aa *
* a a *
* + + *
* + + *
* + + *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
* *
******************************************************************************
(Plot scaling attempted with plot size of 75 chars by 60.00 lines.)
Time interval between advances = 50.0000 seconds
Total number of advances = 20
Number of advances between outputs = 4
Profile coordinates are put in the plot-data file
sample>
********** End of lab session **********
------------------------------------------------
Exec times: 66.040u, 0.760s seconds 14:16:26
1
1----------------------------------------------------------------------------8
***** SAMPLE *****
***** Simulation and Modelling of Profiles in *****
* Lithography and Etching *
(ERL, EECS, UCB)
(Version 1.8a June 1, 1991)
(VAX/UNIX version 1.0 June 1, 1991)
Thu May 23 15:11:04 1991
1----------------------------------------------------------------------------8
sample> # ETCHING EXAMPLE
sample> # ETCHING - ISOTROPIC (DEFAULTS)
sample> # Input File: samet0
sample> etchrates 1 0.000005 0.0005 0.0002 ; # isotropic etching and rates
sample> etchnumlay 3 ; # layer specification
sample> etchlayers 2 0.71336 ;
sample> etchlayers 1 0.07412 ;
sample> etchaccur 3 ; # accuracy
sample> etchprof 1 1.0 ; # profile (2=) slanted line of 2um
sample> etchwindow 1.25 ; # window of 1.25um
sample> etchplot 1 1 ; # output flags
sample> etchtime 120 480 4 ; # etchtimes
sample> etchrun ; # go!
-------------------- profile message --------------------
turning point 1 (x,z) = 0.0000 0.7134 micrometers
turning point 2 (x,z) = 0.1150 0.7134 micrometers
turning point 3 (x,z) = 0.1250 0.0000 micrometers
turning point 4 (x,z) = 1.1250 0.0000 micrometers
turning point 5 (x,z) = 1.1350 0.7134 micrometers
turning point 6 (x,z) = 1.2500 0.7134 micrometers
~~~~~~~~~~~~~~~~~~~~~~~~~~
~ isotropic etch routine ~
~~~~~~~~~~~~~~~~~~~~~~~~~~
( 1) Version Jun 01, 91
layer thicknesses :
mask = 0.71336 micrometers
layer 1 = 0.07412 micrometers
substrate = 0.20000 micrometers
--- etchrates ---
mask : 0.0000 micrometers/sec
layer 1 : 0.0005 micrometers/sec
substrate : 0.0002 micrometers/sec
---------- system message(etch routine) ----------
Profile coordinates are put in the plot-data file
1x left = 0.0000 micrometers
x right = 1.2500 micrometers
z top = 0.0000 micrometers